Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes

Temperature and injection current dependence of electroluminescence (EL) spectral intensity of the superbright green and blue InGaN single-quantum-well (SQW) light-emitting diodes has been studied over a wide temperature range (T = 15–300 K) and as a function of injection current level (0.1–10 mA). It is found that, when temperature is slightly decreased to 140 K, the EL intensity efficiently increases in both cases, as usually seen due to the improved quantum efficiency. However, with further decrease of temperature down to 15 K, unusual reduction of the EL intensity is commonly observed for both of the two diodes. At low temperatures the integrated EL intensity shows a clear trend of saturation with current, accompanying decreases of the EL differential quantum efficiency. We attribute the EL reduction due to trapping of injected carriers by nonradiative recombination centers. Its dependence on temperature and current shows a striking difference between the green and blue SQW diodes. That is, we find that the blue InGaN SQW diode with a smaller In concentration shows more drastic reduction of the EL intensity at lower temperatures and at higher currents than the green one. This unusual evolution of the EL intensity with temperature and current is due to less efficient carrier capturing by SQW. The carrier capture in the green and blue diodes also shows a keen difference owing to the different In content in the InGaN well. These results are analyzed within a context of rate equation model, assuming a finite number of radiative recombination centers. Importance of the efficient carrier capture processes by localized tail states within SQW at 180–300 K is thus pointed out for explaining the observed enhancement of radiative recombination of injected carriers in the presence of high-density misfit dislocations

Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes

Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright green and blue InGaN single-quantum-well (SQW) light-emitting diodes has been studied over a wide temperature range (T=15-300 K) under a weak injection current of 0.1 mA. It is found that when T is slightly decreased to 140 K, the EL intensity efficiently increases, as usually seen due to the improved quantum efficiency. However, with further decrease of T down to 15 K, it drastically decreases due to reduced carrier capture by SQW and trapping by nonradiative recombination centers. This unusual temperature-dependent evolution of the EL intensity shows a striking difference between green and blue SQW diodes owing to the different potential depths of the InGaN well. The importance of efficient carrier capture processes by localized tail states within the SQW is thus pointed out for enhancement of radiative recombination of injected carriers in the presence of the high-density dislocations. (C) 2001 American Institute of Physics

STUDY ON EXTRACTION METHODOLOGY OF RICE GROWTH CHARACTERISTICS IN FIELD USING TERRESTRIAL LASER MEASUREMENT DATA

Smart agriculture is recommended for labor-saving, refinement and high quality production of rice cultivation with safety and security. The Terrestrial laser measurement has the advantage of acquiring 3D point cloud information with high accuracy and high density, but there is a disadvantage that it becomes difficult to measure the base of rice plant when paddy rice grew. In this study, the 3D point cloud information obtained by terrestrial laser measurement was used to three-dimensionally measure the growth state in the field corresponding to the growing period in time series. The growth characteristics of the whole field as a community were extracted as a representative value of mean growth. Then we attempted extraction of individual differences in growth and growth unevenness, as the deviation from the mean value of the field in terms of the growth characteristics of each strain focused on the individual plants. it is difficult to observe the root of the rice during the growing period, it was used for analyzing the growth quantity as the growth difference height for each growing period by obtaining the difference of the elevation value of the rice at the early stage of growth and at each stage of growing. The spatial variation in the growth quantity of the whole field area and the local area was calculated, the range of the deviation for evaluating the mean variation and the growth abnormality was examined, and the setting of the threshold for evaluating the growth normal and abnormality was examined

Photogenerated Carriers in SrTiO3 Probed by Mid-Infrared Absorption

Infrared absorption spectra of SrTiO$_3$ have been measured under above-band-gap photoexcitations to study the properties of photogenerated carriers, which should play important roles in previously reported photoinduced phenomena in SrTiO$_3$. A broad absorption band appears over the entire mid-infrared region under photoexcitation. Detailed energy, temperature, and excitation power dependences of the photoinduced absorption are reported. This photo-induced absorption is attributed to the intragap excitations of the photogenerated carriers. The data show the existence of a high density of in-gap states for the photocarriers, which extends over a wide energy range starting from the conduction and valence band edges.Comment: 5 pages, 5 figures, submitted to J. Phys. Soc. Jp

Willingness to pay for municipality hospital services in rural Japan: a contingent valuation study

<p>Abstract</p> <p>Background</p> <p>The Japanese healthcare system has undergone reforms to address the struggles that municipality hospitals face. Reform guidelines clearly define criteria for administrative improvement. However, criteria to evaluate the demand for healthcare provisions in rural Japan, including the needs of rural residents for municipality hospitals in particular have not been specified. The purpose of this paper is to measure residents' willingness to pay (WTP) for municipality hospital services using the contingent valuation method, and to evaluate municipality hospital valuation on the basis of WTP. K town, located in the Hokkaido prefecture of Japan, was selected as the location for this study. Participants were recruited by a town hall healthcare administrator, hospital and clinic staff, and a local dentist. Participants were asked what amount they would be willing to pay as taxes to continue accessing the services of the municipality hospital for one year by using open-ended questions in face-to-face interviews.</p> <p>Findings</p> <p>Forty-eight residents were initially recruited, and 40 participants were selected for the study (response rate 83%). As compared to K town's population, this data slanted toward the elderly, although there was no significant difference in frequency among the characteristics. The median WTP was estimated at 39,484 yen ($438.71), with a 95$308.95-615.96). Logistic regression revealed no significant factors affecting WTP.</p> <p>Conclusions</p> <p>If the total amount of residents' WTP for the municipality hospital were to be estimated by this result, it would calculate with 129,586,000 yen ($1,439,844). This is approximately equal to the amount of money to be transferred from the general account of the government of K town, more than one-half of the town tax of K town, and about two-fold in comparison to Japan as a whole. This showed that K town's residents placed a high valuation on the municipality hospital, which nearly equalled the amount that the K town government provided to the municipality hospital to cover its annual deficit. K town residents had come to expect not only general clinical practice, but also emergency medical services and night practice provided by their own town's municipality hospital. WTP can be used as a measure of hospital evaluation because it reflects the importance of the hospital to the residents in its region.</p

Optically tuned dimensionality crossover in photocarrier-doped SrTiO3_3: onset of weak localization

We report magnetotransport properties of photogenerated electrons in undoped SrTiO$_3$ single crystals under ultraviolet illumination down to 2 K. By tuning the light intensity, the steady state carrier density can be controlled, while tuning the wavelength controls the effective electronic thickness by modulating the optical penetration depth. At short wavelengths, when the sheet conductance is close to the two-dimensional Mott minimum conductivity we have observed critical behavior characteristic of weak localization. Negative magnetoresistance at low magnetic field is highly anisotropic, indicating quasi-two-dimensional electronic transport. The high mobility of photogenerated electrons in SrTiO$_3$ allows continuous tuning of the effective electronic dimensionality by photoexcitation.Comment: 7 pages, 7 figure