Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks

In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at accumulation and show relaxation effects in the whole range of applied stress voltages. Applied voltage polarities as well as thickness dependence of the relaxation effects have been investigated. Charge trapping is negligible at low stress fields while at higher fields (>4MV/cm) it becomes significant. In addition, we give experimental evidence that in tandem with the dielectric relaxation effect another mechanism- the so-called Maxwell-Wagner instability- is present and affects the transient current during the application of a CVS pulse. This instability is also found to be field dependent thus resulting in a trapped charge which is negative at low stress fields but changes to positive at higher fields.Comment: 27pages, 10 figures, 3 tables, regular journal contribution (accepted in IEEE TED, Vol.50, issue 10

Poster: Improving Bug Localization with Report Quality Dynamics and Query Reformulation

Recent findings from a user study suggest that IR-based bug localization techniques do not perform well if the bug report lacks rich structured information such as relevant program entity names. On the contrary, excessive structured information such as stack traces in the bug report might always not be helpful for the automated bug localization. In this paper, we conduct a large empirical study using 5,500 bug reports from eight subject systems and replicating three existing studies from the literature. Our findings (1) empirically demonstrate how quality dynamics of bug reports affect the performances of IR-based bug localization, and (2) suggest potential ways (e.g., query reformulations) to overcome such limitations.Comment: The 40th International Conference on Software Engineering (Companion volume, Poster Track) (ICSE 2018), pp. 348--349, Gothenburg, Sweden, May, 201

Mass transfer at low reynolds number in liquid fluidized beds

Imperial Users onl