Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.Comment: 16 pages, 4 figure

CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions

Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, delta is virtually independent of the junction sizes of 48-81 nm in diameter. The values of delta increase linearly with increasing the recording layer thickness. The slope of the linear fit is explained well by a model based on nucleation type magnetization reversal.Comment: 12 pages, 5 figure

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200 degree C and then decreased rapidly at Ta over 250 degree C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture result-ing from diffusion of B into Pd layers. MTJs which were in-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayer showed TMR ratio of 78% by post annealing at Ta =200 degree C.Comment: 12 pages, 4 figure

Reorientation Transition in Single-Domain (Ga,Mn)As

We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain model. The uniaxial and biaxial anisotropy constants vary respectively as the square and fourth power of the spontaneous magnetization across the whole temperature range up to T_C. The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally-assisted magnetization switching.Comment: 4 pages, 4 figure

On the nature of ferromagnetism in diluted magnetic semiconductors: GaAs:Mn, GaP:Mn

A microscopic Hamiltonian for interacting manganese impurities in diluted magnetic semiconductors (DMS) is derived. It is shown that in p -type III-V DMS the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile holes and localized states near the top of the valence band play the role of unoccupied oxygen orbitals which induce ferromagnetism. The Curie temperature estimated from the proposed kinematic exchange agrees with recent experiments on GaAs:Mn. The model is also applicable to the GaP:Mn system.Comment: 10 pages, 3 figures. Submitted to Europhysics Letters, June 25, 200

Positional Disorder, Spin-Orbit Coupling and Frustration in GaMnAs

We study the magnetic properties of metallic GaMnAs. We calculate the effective RKKY interaction between Mn spins using several realistic models for the valence band structure of GaAs. We also study the effect of positional disorder of the Mn on the magnetic properties. We find that the interaction between two Mn spins is anisotropic due to spin-orbit coupling within both the so-called spherical approximation and in the more realistic six band model. The spherical approximation strongly overestimates this anistropy, especially for short distances between Mn ions. Using the obtained effective Hamiltonian we carry out Monte Carlo simulations of finite and zero temperature magnetization and find that, due to orientational frustration of the spins, non-collinear states appear in both valence band approximations for disordered, uncorrelated Mn impurities in the small concentration regime. Introducing correlations among the substitutional Mn positions or increasing the Mn concentration leads to an increase in the remnant magnetization at zero temperature and an almost fully polarized ferromagnetic state.Comment: 17 Pages, 13 Figure

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration due to Mn atoms at random non-crystallographic positions. In the epilayer, Mn incorporated at interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coeffcient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.Comment: 9 pages, 9 figure

Disorder, spin-orbit, and interaction effects in dilute Ga1−xMnxAs{\rm Ga}_{1-x}{\rm Mn}_x{\rm As}

We derive an effective Hamiltonian for ${\rm Ga}_{1-x}{\rm Mn}_x {\rm As}$ in the dilute limit, where ${\rm Ga}_{1-x}{\rm Mn}_x {\rm As}$ can be described in terms of spin $F=3/2$ polarons hopping between the {\rm Mn} sites and coupled to the local {\rm Mn} spins. We determine the parameters of our model from microscopic calculations using both a variational method and an exact diagonalization within the so-called spherical approximation. Our approach treats the extremely large Coulomb interaction in a non-perturbative way, and captures the effects of strong spin-orbit coupling and Mn positional disorder. We study the effective Hamiltonian in a mean field and variational calculation, including the effects of interactions between the holes at both zero and finite temperature. We study the resulting magnetic properties, such as the magnetization and spin disorder manifest in the generically non-collinear magnetic state. We find a well formed impurity band fairly well separated from the valence band up to $x_{\rm active} \lesssim 0.015$ for which finite size scaling studies of the participation ratios indicate a localization transition, even in the presence of strong on-site interactions, where $x_{\rm active}<x_{\rm nom}$ is the fraction of magnetically active Mn. We study the localization transition as a function of hole concentration, Mn positional disorder, and interaction strength between the holes.Comment: 15 pages, 12 figure