Optically controlled GaAs dual-gate MESFET and permeable base transistors

Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 microns were obtained and compared with GaAs MESFET. It was observed that PBT can handle higher current density when illuminated

High temperature superconductor analog electronics for millimeter-wavelength communications

The performance of high temperature superconductor (HTS) passive microwave circuits up to X-band was encouraging when compared to their metallic counterparts. The extremely low surface resistance of HTS films up to about 10 GHz enables a reduction in loss by as much as 100 times compared to copper when both materials are kept at about 77 K. However, a superconductor's surface resistance varies in proportion to the frequency squared. Consequently, the potential benefit of HTS materials to millimeter-wave communications requires careful analysis. A simple ring resonator was used to evaluate microstrip losses at Ka-band. Additional promising components were investigated such as antennas and phase shifters. Prospects for HTS to favorable impact millimeter-wave communications systems are discussed

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors

The spectrum of renal changes in patients with liver diseases: an immunofluorescent and light microscopic study

Background: There are divergent observations on renal function tests and renal morphology in patients with liver diseases. The present study was designed (1) To study the morphological changes in kidney in patients with various types of Liver diseases; (2) To study the correlation between the renal histology, clinical and other laboratory parameters in these cases; (3) To suggest the possible mechanisms of renal injury secondary to liver diseases.Methods: This prospective study was carried out at the department of pathology of a tertiary care centre in Delhi. A total of 30 patients admitted with liver diseases were included in the study. All kidney samples were evaluated by light microscopy and immunofluorescence microscopy. The sections were stained by fluorescent labeled antisera for human IgG, IgA and IgM. Postmortem kidney biopsy from 10 patients dying of unrelated diseases served as controls.Results: Glomerular changes on light microscopy were present in twenty four patients (80%) as compared to two controls (20%). The difference was statistically significant (x2= 11.75; p<0.001). Nine out of 13 patients with severe impairment of liver function tests (LFTs) showed specific glomerulopathies whereas only one out of 17 patients with mild to moderate impairment of LFTs, showed specific glomerular lesion. It was found to be statistically significant (x2= 13.4; p<0.001). Immunofluorescent study showed the presence of immune deposits in 21 out of 30 patients (70%). IgA positivity was seen in 18 cases, IgG in 9 cases and IgM in 10 cases.Conclusions: There is a wide spectrum of morphological lesions in the kidney in patients with liver diseases. These were mainly glomerular lesions and were directly related to the severity and chronicity of liver diseases. Immune deposits were commonly present in patients with chronic liver disease.

Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed

RF characterization of monolithic microwave and mm-wave ICs

A number of fixturing techniques compatible with automatic network analysis are presented. The fixtures are capable of characterizing GaAs Monolithic Microwave Integrated Circuits (MMICs) at K and Ka band. Several different transitions are used to couple the RF test port to microstrip. Fixtures which provide chip level de-embedding are included. In addition, two advanced characterization techniques are assessed

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition

A Convenient Method for the Preparation of Organo-Selenium & Organo- Tellurium Compounds: Part II – Phenyltellurium Bromides & Phenyl tellurium Iodides

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