Interlayer exchange coupling in (Ga,Mn)As based multilayers

Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.Comment: 4 pages, 2 figures. To be published in physica status solidi c as the proceedings of the PASPS IV conferenc

Ferromagnetic ordering in dilute magnetic dielectrics with and without free carriers

The state of art in the theoretical and experimental studies of transition metal doped oxides (dilute magnetic dielectrics) is reviewed. The available data show that the generic non-equilibrium state of oxide films doped with magnetic impurities may either favor ferromagnetism with high Curie temperature or result in highly inhomogeneous state without long-range magnetic order. In both case concomitant defects (vacancies, interstitial ions play crucial part.Comment: 10 pages, 3 figures. The paper was presented at the Moscow Internation Symposium on Magnetism (MISM-08). To be published in Journ. Magnetism and Magnetic Material

Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range

We report on a study of the ac conductivity and magneto-optical properties of metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible spectrum. Our analysis is based on the successful kinetic exchange model for (III,Mn)V ferromagnetic semiconductors. We perform the calculations within the Kubo formalism and treat the disorder effects pertubatively within the Born approximation, valid for the metallic regime. We consider an eight-band Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a ten-band model with additional dispersionless bands simulating phenomenologically the upper-mid-gap states induced by antisite and interstitial impurities. These models qualitatively account for optical-absorption experiments and predict new features in the mid-infrared Kerr angle and magnetic-circular-dichroism properties as a function of Mn concentration and free carrier density.Comment: 10 pages, 7 figures, some typos correcte

Noncollinear Ferromagnetism in (III,Mn)V Semiconductors

We investigate the stability of the collinear ferromagnetic state in kinetic exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions >. Our results suggest that {\em noncollinear ferromagnetism} is commom to these semiconductor systems. The instability of the collinear state is due to long-ranged fluctuations invloving a large fraction of the localized magnetic moments. We address conditions that favor the occurrence of noncollinear groundstates and discuss unusual behavior that we predict for the temperature and field dependence of its saturation magnetization.Comment: 5 pages, one figure included, presentation of technical aspects simplified, version to appear in Phys. Rev. Let

Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors

The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these materials have suggested that the polaron-polaron interaction is ferromagnetic, in contrast to the antiferromagnetic carrier-carrier interactions that are characteristic of nonmagnetic semiconductors. To explain this behavior, a model has been developed in which polarons interact via both the standard direct carrier-carrier exchange interaction (due to virtual carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due to the interactions of polarons with magnetic ions in an interstitial region). Using a variational procedure, the optimal values of the model parameters were determined as a function of temperature. At temperatures of interest, the parameters describing polaron-polaron interactions were found to be nearly temperature-independent. For reasonable values of these constant parameters, we find that indirect ferromagnetic interactions can dominate the direct antiferromagnetic interactions and cause the polarons to align. This result supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure

Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells

We report on the observation of the Ising quantum Hall ferromagnet with Curie temperature $T_C$ as high as 2 K in a modulation-doped (Cd,Mn)Te heterostructure. In this system field-induced crossing of Landau levels occurs due to the giant spin-splitting effect. Magnetoresistance data, collected over a wide range of temperatures, magnetic fields, tilt angles, and electron densities, are discussed taking into account both Coulomb electron-electron interactions and s$-$d coupling to Mn spin fluctuations. The critical behavior of the resistance ``spikes'' at $T \to T_C$ corroborates theoretical suggestions that the ferromagnet is destroyed by domain excitations.Comment: revised, 4 pages, 4 figure

Paramagnetic GaN:Fe and ferromagnetic (Ga,Fe)N - relation between structural, electronic, and magnetic properties

We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatially-resolved energy dispersive X-ray spectroscopy (EDS), secondary-ion mass spectroscopy (SIMS), photoluminescence (PL), Hall-effect, electron-paramagnetic resonance (EPR), and magnetometry employing a superconducting quantum interference device (SQUID). A combination of TEM and EDS reveals the presence of coherent nanocrystals presumably FexN with the composition and lattice parameter imposed by the host. From both TEM and SIMS studies, it is stated that the density of nanocrystals and, thus the Fe concentration increases towards the surface. In layers with iron content x<0.4% the presence of ferromagnetic signatures, such as magnetization hysteresis and spontaneous magnetization, have been detected. We link the presence of ferromagnetic signatures to the formation of Fe-rich nanocrystals, as evidenced by TEM and EDS studies. This interpretation is supported by magnetization measurements after cooling in- and without an external magnetic field, pointing to superparamagnetic properties of the system. It is argued that the high temperature ferromagnetic response due to spinodal decomposition into regions with small and large concentration of the magnetic component is a generic property of diluted magnetic semiconductors and diluted magnetic oxides showing high apparent Curie temperature.Comment: 21 pages, 30 figures, submitted to Phys. Rev.

Lithographic engineering of anisotropies in (Ga,Mn)As

The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures