75 research outputs found
Electronic and magnetic properties of GaMnAs: Annealing effects
The effect of short-time and long-time annealing at 250C on the conductivity,
hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs
heterostructures is studied by in-situ conductivity measurements as well as
Raman and SQUID measurements before and after annealing. Whereas the
conductivity monotonously increases with increasing annealing time, the hole
density and the Curie temperature show a saturation after annealing for 30
minutes. The incorporation of thin InGaMnAs layers drastically enhances the
Curie temperature of the GaMnAs layers.Comment: 4 pages, 6 figures, submitted to Physica
Information Infrastructure for Cooperative Research in Neuroscience
The paper describes a framework for efficient sharing of knowledge between research groups, which have been working for several years without flaws. The obstacles in cooperation are connected primarily with the lack of platforms for effective exchange of experimental data, models, and algorithms. The solution to these problems is proposed by construction of the platform (EEG.pl) with the semantic aware search scheme between portals. The above approach implanted in the international cooperative projects like NEUROMATH may bring the significant progress in designing efficient methods for neuroscience research
Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
The recently reported Rutherford backscattering and particle-induced X-ray
emission experiments have revealed that in low-temperature MBE grown GaMnAs a
significant part of the incorporated Mn atoms occupies tetrahedral interstitial
sites in the lattice. Here we study the magnetic properties of these
interstitial ions. We show that they do not participate in the hole-induced
ferromagnetism. Moreover, Mn interstitial double donors may form pairs with the
nearest substitutional Mn acceptors - our calculations evidence that the spins
in such pairs are antiferromagnetically coupled by the superexchange. We also
show that for the Mn ion in the other, hexagonal, interstitial position (which
seems to be the case in the GaMnBeAs samples) the p-d interactions with the
holes, responsible for the ferromagnetism, are very much suppressed.Comment: 4 pages, 3 figures, submitted to PR
Annealing-Dependent Magnetic Depth Profile in Ga[1-x]Mn[x]As
We have studied the depth-dependent magnetic and structural properties of
as-grown and optimally annealed Ga[1-x]Mn[x]As films using polarized neutron
reflectometry. In addition to increasing total magnetization, the annealing
process was observed to produce a significantly more homogeneous distribution
of the magnetization. This difference in the films is attributed to the
redistribution of Mn at interstitial sites during the annealing process. Also,
we have seen evidence of significant magnetization depletion at the surface of
both as-grown and annealed films.Comment: 5 pages, 3 figure
Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys
We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy,
In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The
magnetic properties were investigated by direct magnetization measurements,
electrical transport, magnetic circular dichroism, and the magneto-optical Kerr
effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the
attributes of a system with carrier-mediated FM interactions, including
well-defined hysteresis loops, a cusp in the temperature dependence of the
resistivity, strong negative magnetoresistance, and a large anomalous Hall
effect. The Curie temperatures in samples investigated thus far range up to 8.5
K, which are consistent with a mean-field-theory simulation of the
carrier-induced ferromagnetism based on the 8-band effective band-orbital
method.Comment: Invited talk at 11th International Conference on Narrow Gap
Semiconductors, Buffalo, New York, U.S.A., June 16 - 20, 200
Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied
material for prototype applications in semiconductor spintronics. Because
ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has
direct and crucial bearing on its Curie temperature TC. It is vigorously
debated, however, whether holes in (Ga,Mn)As reside in the valence band or in
an impurity band. In this paper we combine results of channeling experiments,
which measure the concentrations both of Mn ions and of holes relevant to the
ferromagnetic order, with magnetization, transport, and magneto-optical data to
address this issue. Taken together, these measurements provide strong evidence
that it is the location of the Fermi level within the impurity band that
determines TC through determining the degree of hole localization. This finding
differs drastically from the often accepted view that TC is controlled by
valence band holes, thus opening new avenues for achieving higher values of TC.Comment: 5 figures, supplementary material include
Ferromagnetic semiconductors
The current status and prospects of research on ferromagnetism in
semiconductors are reviewed. The question of the origin of ferromagnetism in
europium chalcogenides, chromium spinels and, particularly, in diluted magnetic
semiconductors is addressed. The nature of electronic states derived from 3d of
magnetic impurities is discussed in some details. Results of a quantitative
comparison between experimental and theoretical results, notably for Mn-based
III-V and II-VI compounds, are presented. This comparison demonstrates that the
current theory of the exchange interactions mediated by holes in the valence
band describes correctly the values of Curie temperatures T_C magnetic
anisotropy, domain structure, and magnetic circular dichroism. On this basis,
chemical trends are examined and show to lead to the prediction of
semiconductor systems with T_C that may exceed room temperature, an expectation
that are being confirmed by recent findings. Results for materials containing
magnetic ions other than Mn are also presented emphasizing that the double
exchange involving hoping through d states may operate in those systems.Comment: 18 pages, 8 figures; special issue of Semicon. Sci. Technol. on
semiconductor spintronic
Magnetic interactions in EuTe epitaxial layers and EuTe/PbTe superlattices
The magnetic properties of antiferromagnetic (AFM) EuTe epitaxial layers and
short period EuTe/PbTe superlattices (SLs), grown by molecular beam epitaxy on
(111) BaF substrates, were studied by magnetization and neutron diffraction
measurements. Considerable changes of the N\'eel temperature as a function of
the EuTe layer thickness as well as of the strain state were found. A mean
field model, taking into account the variation of the exchange constants with
the strain-induced lattice distortions, and the nearest neighbor environment of
a Eu atoms, was developed to explain the observed changes in wide
range of samples. Pronounced interlayer magnetic correlations have been
revealed by neutron diffraction in EuTe/PbTe SLs with PbTe spacer thickness up
to 60 \AA. The observed diffraction spectra were analyzed, in a kinematical
approximation, assuming partial interlayer correlations characterized by an
appropriate correlation parameter. The formation of interlayer correlations
between the AFM EuTe layers across the nonmagnetic PbTe spacer was explained
within a framework of a tight-binding model. In this model, the interlayer
coupling stems from the dependence of the total electronic energy of the
EuTe/PbTe SL on the spin configurations in adjacent EuTe layers. The influence
of the EuTe and PbTe layer thickness fluctuations, inherent in the epitaxial
growth process, on magnetic properties and interlayer coupling is discussed.Comment: 17 pages, 19 figures, accepted to PR
Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
Over the last decade the search for compounds combining the resources of
semiconductors and ferromagnets has evolved into an important field of
materials science. This endeavour has been fuelled by continual demonstrations
of remarkable low-temperature functionalities found for ferromagnetic
structures of (Ga,Mn)As, p-(Cd,Mn)Te, and related compounds as well as by ample
observations of ferromagnetic signatures at high temperatures in a number of
non-metallic systems. In this paper, recent experimental and theoretical
developments are reviewed emphasising that, from the one hand, they disentangle
many controversies and puzzles accumulated over the last decade and, on the
other, offer new research prospects.Comment: review, 13 pages, 8 figures, 109 reference
Magnetic susceptibilities of diluted magnetic semiconductors and anomalous Hall-voltage noise
The carrier spin and impurity spin densities in diluted magnetic
semiconductors are considered using a semiclassical approach. Equations of
motions for the spin densities and the carrier spin current density in the
paramagnetic phase are derived, exhibiting their coupled diffusive dynamics.
The dynamical spin susceptibilities are obtained from these equations. The
theory holds for p-type and n-type semiconductors doped with magnetic ions of
arbitrary spin quantum number. Spin-orbit coupling in the valence band is shown
to lead to anisotropic spin diffusion and to a suppression of the Curie
temperature in p-type materials. As an application we derive the Hall-voltage
noise in the paramagnetic phase. This quantity is critically enhanced close to
the Curie temperature due to the contribution from the anomalous Hall effect.Comment: 18 pages, 1 figure include
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