Charge ordering in the spinels AlV2_2O4_4 and LiV2_2O4_4

We develop a microscopic theory for the charge ordering (CO) transitions in the spinels AlV$_2$O$_4$ and LiV$_2$O$_4$ (under pressure). The high degeneracy of CO states is lifted by a coupling to the rhombohedral lattice deformations which favors transition to a CO state with inequivalent V(1) and V(2) sites forming Kagom\'e and trigonal planes respectively. We construct an extended Hubbard type model including a deformation potential which is treated in unrestricted Hartree Fock approximation and describes correctly the observed first-order CO transition. We also discuss the influence of associated orbital order. Furthermore we suggest that due to different band fillings AlV$_2$O$_4$ should remain metallic while LiV$_2$O$_4$ under pressure should become a semiconductor when charge disproportionation sets in

The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: atomistic origin of planar defect formation

The mechanism of the recrystallization in epitaxial (0001) GaN film, introduced by the indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by micro-Raman area mapping. 'Pop-in' bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress field at the center of indentation for the initiation of the recrystallization process. A planar defect migration mechanism is evolved. A pivotal role of vacancy migration is noted, for the first time, as the rate-limiting factor for the dislocation dynamics initiating the recrystallization process in GaN

Abelian Sandpile Model on the Honeycomb Lattice

We check the universality properties of the two-dimensional Abelian sandpile model by computing some of its properties on the honeycomb lattice. Exact expressions for unit height correlation functions in presence of boundaries and for different boundary conditions are derived. Also, we study the statistics of the boundaries of avalanche waves by using the theory of SLE and suggest that these curves are conformally invariant and described by SLE2.Comment: 24 pages, 5 figure

Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-)Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes

Topological Surface States and Dirac point tuning in ternary Bi2Te2Se class of topological insulators

Using angle-resolved photoemission spectroscopy, we report electronic structure for representative members of ternary topological insulators. We show that several members of this family, such as Bi2Se2Te, Bi2Te2Se, and GeBi2Te4, exhibit a singly degenerate Dirac-like surface state, while Bi2Se2S is a fully gapped insulator with no measurable surface state. One of these compounds, Bi2Se2Te, shows tunable surface state dispersion upon its electronic alloying with Sb (SbxBi2-xSe2Te series). Other members of the ternary family such as GeBi2Te4 and BiTe1.5S1.5 show an in-gap surface Dirac point, the former of which has been predicted to show nonzero weak topological invariants such as (1;111); thus belonging to a different topological class than BiTe1.5S1.5. The measured band structure presented here will be a valuable guide for interpreting transport, thermoelectric, and thermopower measurements on these compounds. The unique surface band topology observed in these compounds contributes towards identifying designer materials with desired flexibility needed for thermoelectric and spintronic device fabrication.Comment: 9 pages, 6 figures; Related results at http://online.kitp.ucsb.edu/online/topomat11/hasan

Energy efficiency award system in Malaysia for energy sustainability

Many countries have organised energyawards as an instrument to promote energy efficiency (EE), to contribute towards energy sustainability and to provide a mechanism for organisations to continuously search, benchmark and acknowledge initiatives and best practices in EE. To be effective, an award system must be tailored towards the needs, the level of readiness and the acceptance of a nation. This paper presents a framework for implementation of a national EE award in the context of Malaysia. The current energy scenario and energy issues relevant to Malaysia are first highlighted to establish the premise for organising a national energy award. Models and success stories of EE awards in other countries are discussed as possible benchmarks for implementation. The results of a survey conducted on various energy stakeholders in Malaysia confirmed the needs, readiness and acceptance for a national EE award. A framework for the implementation of a Malaysian EE award is proposed based on the survey conducted, and on various models of energy award implementation worldwide

The novel mTOR inhibitor RAD001 (Everolimus) induces antiproliferative effects in human pancreatic neuroendocrine tumor cells

Background/Aim: Tumors exhibiting constitutively activated PI(3) K/Akt/mTOR signaling are hypersensitive to mTOR inhibitors such as RAD001 (everolimus) which is presently being investigated in clinical phase II trials in various tumor entities, including neuroendocrine tumors (NETs). However, no preclinical data about the effects of RAD001 on NET cells have been published. In this study, we aimed to evaluate the effects of RAD001 on BON cells, a human pancreatic NET cell line that exhibits constitutively activated PI(3) K/Akt/mTOR signaling. Methods: BON cells were treated with different concentrations of RAD001 to analyze its effect on cell growth using proliferation assays. Apoptosis was examined by Western blot analysis of caspase-3/PARP cleavage and by FACS analysis of DNA fragmentation. Results: RAD001 potently inhibited BON cell growth in a dose-dependent manner which was dependent on the serum concentration in the medium. RAD001-induced growth inhibition involved G0/G1-phase arrest as well as induction of apoptosis. Conclusion: In summary, our data demonstrate antiproliferative and apoptotic effects of RAD001 in NET cells in vitro supporting its clinical use in current phase II trials in NET patients. Copyright (c) 2007 S. Karger AG, Basel

Lifshitz transition and van Hove singularity in a Topological Dirac Semimetal

A topological Dirac semimetal is a novel state of quantum matter which has recently attracted much attention as an apparent 3D version of graphene. In this paper, we report critically important results on the electronic structure of the 3D Dirac semimetal Na3Bi at a surface that reveals its nontrivial groundstate. Our studies, for the first time, reveal that the two 3D Dirac cones go through a topological change in the constant energy contour as a function of the binding energy, featuring a Lifshitz point, which is missing in a strict 3D analog of graphene (in other words Na3Bi is not a true 3D analog of graphene). Our results identify the first example of a band saddle point singularity in 3D Dirac materials. This is in contrast to its 2D analogs such as graphene and the helical Dirac surface states of a topological insulator. The observation of multiple Dirac nodes in Na3Bi connecting via a Lifshitz point along its crystalline rotational axis away from the Kramers point serves as a decisive signature for the symmetry-protected nature of the Dirac semimetal's topological groundstate.Comment: 5 pages, 4 Figures, Related papers on topological Fermi arcs and Weyl Semimetals (WSMs) are at http://physics.princeton.edu/zahidhasangroup/index.htm