GaN-based radial heterostructure nanowires grown by MBE and ALD

A combination of molecular beam epitaxy (MBE) and atomic layer deposition (ALD) was adopted to fabricate GaN-based core/shell NW structures. ALD was used to deposit a HfO2 shell of onto the MBE grown GaN NWs. Electron transparent samples were prepared by focussed ion beam methods and characterized using state-of-the-art analytical transmission and scanning transmission electron microscopy. The polycrystalline coating was found to be uniform along the whole length of the NWs. Photoluminescence and Raman spectroscopy analysis confirms that the HfO2 ALD coating does not add any structural defect when deposited on the NWs

Metal - Insulator transition driven by vacancy ordering in GeSbTe phase change materials

Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows

Metal - Insulator transition driven by vacancy ordering in GeSbTe phase change materials

Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphousto-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows

Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures

The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor structures which are not symmetric with respect to spatial inversion, for instance in bulk zinc-blend semiconductors. The interaction has both symmetric and antisymmetric parts with respect to permutation of spin components. The antisymmetric (Dzyaloshinskii-Moriya) interaction is the strongest one. It contributes significantly into spin relaxation of localized electrons; in particular, it governs low-temperature spin relaxation in n-GaAs with the donor concentration near 10^16cm-3. The interaction must be allowed for in designing spintronic devices, especially spin-based quantum computers, where it may be a major source of decoherence and errors

Ein mehrkanaliges Biosensormesssystem zur Überwachung der Nitrifikation in Abwasserreinigungsanlagen

Bei der biologischen Abwasserreinigung treten häufig Störungen der Nitrifikationsstufe (biochemische Oxidation von Ammonium über Nitrit zu Nitrat) auf, die durch Hemmstoffe sowie durch Stossbelastungen hoher Stickstofffrachten (N-BSB) verursacht werden. Dadurch gelangen erhöhte Mengen an sauerstoffzehrenden reduzierten Stickstoffverbindungen in die Oberflächengewässer. Dies ist besonders kritisch bei Vorflutern mit einem bereits niedrigem Sauerstoffgehalt, da durch diese reduzierten Stickstoffverbindungen die Konzentration an gelöstem Sauerstoff in Folge mikrobieller Oxidation stark absinken kann und somit die Biocönose im Gewässer nachhaltig gestört wird. Da es sich bei Nitrit und Ammoniak zudem um starke Fischgifte handelt, ist die Elimination dieser Stickstoffverbindungen aus dem Abwasser nicht zuletzt auch gesetzlich vorgeschrieben. Zur Erfassung von Störungen der Nitrifikationsstufe wurde deswegen in den vergangenen Jahren am ISWA ein Nitrifikanten-Einzelbiosensor entwickelt. Dabei wird über den Sauerstoffverbrauch des Immobilisates die bakterielle Stoffwechselaktivität überwacht, wobei dies ein Maß für das Vorhandensein von Hemmstoffen bzw. Nitrifikationssubstraten in einer Probe ist. Der Vorteil dieses Systems ist vor allem darin zu sehen, dass die damit durchgeführten Messungen sowohl schnell als auch reproduzierbar durchführbar sind. So ist mit diesem Geräteprototyp über die Durchführung von ca. 10 – 15 Einzelmessungen verschiedener Probenverdünnungen die Quantifizierung der Hemmwirkung von einer Probe pro Messtag möglich. Schlussfolgerung und Ausblick Die Untersuchungen zur Bestimmung der nitrifikationshemmenden Wirkung von Standardhemmstoffen, Abwasserproben und des N-BSB ergaben, dass die neu entwickelten Nitrifikanten-Biosensoren schnell und mit hoher Signalstabilität auf sich ändernde Hemmstoff- und Substratkonzentrationen reagieren und somit für die Klärwerksüberwachung prinzipiell einsetzbar sind

Is analysing the nitrogen use at the plant canopy level a matter of choosing the right optimization criterion?

Optimization theory in combination with canopy modeling is potentially a powerful tool for evaluating the adaptive significance of photosynthesis-related plant traits. Yet its successful application has been hampered by a lack of agreement on the appropriate optimization criterion. Here we review how models based on different types of optimization criteria have been used to analyze traits—particularly N reallocation and leaf area indices—that determine photosynthetic nitrogen-use efficiency at the canopy level. By far the most commonly used approach is static-plant simple optimization (SSO). Static-plant simple optimization makes two assumptions: (1) plant traits are considered to be optimal when they maximize whole-stand daily photosynthesis, ignoring competitive interactions between individuals; (2) it assumes static plants, ignoring canopy dynamics (production and loss of leaves, and the reallocation and uptake of nitrogen) and the respiration of nonphotosynthetic tissue. Recent studies have addressed either the former problem through the application of evolutionary game theory (EGT) or the latter by applying dynamic-plant simple optimization (DSO), and have made considerable progress in our understanding of plant photosynthetic traits. However, we argue that future model studies should focus on combining these two approaches. We also point out that field observations can fit predictions from two models based on very different optimization criteria. In order to enhance our understanding of the adaptive significance of photosynthesis-related plant traits, there is thus an urgent need for experiments that test underlying optimization criteria and competing hypotheses about underlying mechanisms of optimization