Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within eight-band k.p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position.Comment: 4 pages, 4 figure

Evaluation épidémiologique du programme valaisan de dépistage du cancer du sein, 2013-2017

Le cancer du sein est le cancer le plus fréquent et le plus mortel chez les femmes en Valais et en Suisse. Chaque année 250 Valaisannes en sont atteintes et 50 en décèdent. Cependant, tant l’incidence que la mortalité du cancer du sein diminuent en Valais chez les femmes dans la tranche d’âge de 50 à 69 ans. Le programme valaisan de dépistage du cancer du sein existe depuis octobre 1999 et a pour but de promouvoir, organiser et réaliser l’action de dépistage auprès de la population féminine du canton entre 50 et 70 ans. Des évaluations indépendantes et régulières permettent de s’assurer que la qualité et l’efficacité d’un programme de dépistage répondent à des normes internationales, périodiquement révisées. L’évaluation épidémiologique du programme valaisan a été confiée au département Epidémiologie et systèmes de santé du Centre universitaire de médecine générale et santé publique à Lausanne (Unisanté)a, en charge de l’évaluation de nombreux programmes de dépistage en Suisse. Ce rapport décrit l’activité du programme entre 2013 et 2017 (section 2) et analyse son utilisation (section 3), sa qualité (section 4) et son efficacité (section 6). Il traite aussi, pour la première fois, les échographies complémentaires recommandées pour seins très denses (section 5). Outre les indicateurs usuels de performance, l’analyse couvre certains effets indésirables du dépistage comme les résultats faussement positifs ou les cancers survenant entre deux examens de dépistage (cancers d’intervalle). Les résultats présentés dans ce rapport se basent sur 63'382 mammographies et plus de 34'000 femmes

Fatigue analysis-based numerical design of stamping tools made of cast iron

This work concerns stress and fatigue analysis of stamping tools made of cast iron with an essentially pearlitic matrix and containing foundry defects. Our approach consists at first, in coupling the stamping numerical processing simulations and structure analysis in order to improve the tool stiffness geometry for minimizing the stress state and optimizing their fatigue lifetime. The method consists in simulating the stamping process by considering the tool as a perfect rigid body. The estimated contact pressure is then used as boundary condition for FEM structure loading analysis of the tool. The result of this analysis is compared with the critical stress limit depending on the automotive model. The acceptance of this test allows calculating the fatigue lifetime of the critical zone by using the S–N curve of corresponding load ratio. If the prescribed tool life requirements are not satisfied, then the critical region of the tool is redesigned and the whole simulation procedures are reactivated. This method is applied for a cast iron EN-GJS-600-3. The stress-failure (S–N) curves for this material is determined at room temperature under push pull loading with different load ratios R0σmin/σmax0−2, R0−1 and R00.1. The effects of the foundry defects are determined by SEM observations of crack initiation sites. Their presence in tested specimens is associated with a reduction of fatigue lifetime by a factor of 2. However, the effect of the load ratio is more important

Complement component 4A protein levels are negatively related to frontal volumes in patients with schizophrenia spectrum disorders

Background: Excessive C4A-gene expression may result in increased microglia-mediated synaptic pruning. As C4A overexpression is observed in schizophrenia spectrum disorders (SSD), this mechanism may account for the altered brain morphology (i.e. reduced volume and cortical thickness) and cognitive symptoms that characterize SSD. Therefore, this study investigates the association of C4A serum protein levels with brain morphology and cognition, and in particular whether this association differs between recent-onset SSD (n = 69) and HC (n = 40). Methods: Serum C4A protein levels were compared between groups. Main outcomes included total gray matter volume, mean cortical thickness and cognitive performance. Regression analysis on these outcomes included C4A level, group (SSD vs. HC), and C4A*Group interactions. All statistical tests were corrected for age, sex, BMI, and antipsychotic medication dose. Follow-up analyses were performed on separate brain regions and scores on cognitive sub-tasks. Results: The group difference in C4A levels was not statistically significant (p = 0.86). The main outcomes did not show a significant interaction effect (p &gt; 0.13) or a C4A main effect (p &gt; 0.27). Follow-up analyses revealed significant interaction effects for the left medial orbitofrontal and left frontal pole volumes (p &lt; 0.001): C4A was negatively related to these volumes in SSD, but positively in HC. Conclusion: This study demonstrated that C4A was negatively related to – specifically – frontal brain volumes in SSD, but this relation was inverse for HC. The results support the hypothesis of complement-mediated brain volume reduction in SSD. The results also suggest that C4A has a differential association with brain morphology in SSD compared to HC.</p

Tuning the stacking behaviour of a 2D covalent organic framework through non-covalent interactions

Two-dimensional covalent organic frameworks (COFs) are crystalline porous materials composed of organic building blocks that are connected via covalent bonds within their layers, but through non-covalent interactions between the layers. The exact stacking sequence of the layers is of paramount importance for the optoelectronic, catalytic and sorption properties of these polymeric materials. The weak interlayer interactions lead to a variety of stacking geometries in COFs, which are both hard to characterize and poorly understood due to the low levels of crystallinity. Therefore, detailed insights into the stacking geometry in COFs is still largely elusive. In this work we show that the geometric and electronic features of the COF building blocks can be used to guide the stacking behavior of two related 2D imine COFs (TBI-COF and TTI-COF), which either adopt an averaged "eclipsed'' structure with apparent zero-offset stacking or a unidirectionally slip-stacked structure, respectively. These structural features are confirmed by XRPD and TEM measurements. Based on theoretical calculations, we were able to pinpoint the cause of the uniform slip-stacking geometry and high crystallinity of TTI-COF to the inherent self-complementarity of the building blocks and the resulting donor-acceptor-type stacking of the imine bonds in adjacent layers, which can serve as a more general design principle for the synthesis of highly crystalline COFs

Optical frequency comb Fourier transform spectroscopy of formaldehyde in the 1250 to 1390 cm−1 range: Experimental line list and improved MARVEL analysis

We use optical frequency comb Fourier transform spectroscopy to record high-resolution, low-pressure, room-temperature spectra of formaldehyde (H212C16O) in the range of 1250 to 1390 cm−1. Through line-by-line fitting, we retrieve line positions and intensities of 747 rovibrational transitions: 558 from the ν6 band, 129 from the ν4 band, and 14 from the ν3 band, as well as 46 from four different hot bands. We incorporate the accurate and precise line positions (0.4 MHz median uncertainty) into the MARVEL (measured active vibration-rotation energy levels) analysis of the H2CO spectrum. This increases the number of MARVEL-predicted energy levels by 82 and of rovibrational transitions by 5382, and substantially reduces uncertainties of MARVEL-derived H2CO energy levels over a large range: from pure rotational levels below 200 cm−1 up to multiply excited vibrational levels at 6000 cm−1. This work is an important step toward filling the gaps in formaldehyde data in the HITRAN database

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).Comment: 21 pages, 4 figures. arXiv admin note: text overlap with arXiv:0904.369

Use of the Richtmyer-Meshkov Instability to Infer Yield Stress at High-Energy Densities

We use the Richtmyer-Meshkov instability (RMI) at a metal-gas interface to infer the metal’s yield stress (Y) under shock loading and release. We first model how Y stabilizes the RMI using hydrodynamics simulations with a perfectly plastic constitutive relation for copper (Cu). The model is then tested with molecular dynamics (MD) of crystalline Cu by comparing the inferred Y from RMI simulations with direct stress-strain calculations, both with MD at the same conditions. Finally, new RMI experiments with solid Cu validate our simulation-based model and infer Y~0.47 GPa for a 36 GPa shock