Oxide two-dimensional electron gas with high mobility at room-temperature

The prospect of 2‐dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide‐bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high‐electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO(3)‐based heterostructures. Here, 2DEG formation at the LaScO(3)/BaSnO(3) (LSO/BSO) interface with a room‐temperature mobility of 60 cm(2) V(−1) s(−1) at a carrier concentration of 1.7 × 10(13) cm(–2) is reported. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO(3)‐based 2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ high‐temperature treatment, which not only reduces the dislocation density but also produces a SnO(2)‐terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak beam dark‐field transmission electron microscopy imaging and in‐line electron holography technique, a reduction of the threading dislocation density is revealed, and direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This work opens a new pathway to explore the exciting physics of stannate‐based 2DEGs at application‐relevant temperatures for oxide nanoelectronics

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.Comment: Accepted for publication in Phys. Rev.

Scaling of the anomalous Hall effect in Sr1−x_{1-x}Cax_xRuO3_3

The anomalous Hall effect (AHE) of ferromagnetic thin films of Sr$_{1-x}$Ca$_{x}$RuO$_3$ (0 $\leq x \leq$ 0.4) is studied as a function of $x$ and temperature $T$. As $x$ increases, both the transition temperature $T_c$ and the magnetization $M$ are reduced and vanish near $x \sim$ 0.7. For all compositions, the transverse resistivity $\rho_{H}$ varies non-monotonously with $T$, and even changes sign, thus violating the conventional expression $\rho_{H}=R_o B + 4\pi R_s M(T)$ ($B$ is the magnetic induction, while $R_o$ and $R_s$ are the ordinary and anomalous Hall coefficients). From the rather complicated data of $\rho_H$, we find a scaling behavior of the transverse conductivity $\sigma_{xy}$ with $M(T)$, which is well reproduced by the first-principles band calculation assuming the intrinsic origin of the AHE.Comment: REVTeX 4 style; 5 pages, 3 figures; revised 23/2 and accepted for publicatio

The components of empirical multifractality in financial returns

We perform a systematic investigation on the components of the empirical multifractality of financial returns using the daily data of Dow Jones Industrial Average from 26 May 1896 to 27 April 2007 as an example. The temporal structure and fat-tailed distribution of the returns are considered as possible influence factors. The multifractal spectrum of the original return series is compared with those of four kinds of surrogate data: (1) shuffled data that contain no temporal correlation but have the same distribution, (2) surrogate data in which any nonlinear correlation is removed but the distribution and linear correlation are preserved, (3) surrogate data in which large positive and negative returns are replaced with small values, and (4) surrogate data generated from alternative fat-tailed distributions with the temporal correlation preserved. We find that all these factors have influence on the multifractal spectrum. We also find that the temporal structure (linear or nonlinear) has minor impact on the singularity width $\Delta\alpha$ of the multifractal spectrum while the fat tails have major impact on $\Delta\alpha$, which confirms the earlier results. In addition, the linear correlation is found to have only a horizontal translation effect on the multifractal spectrum in which the distance is approximately equal to the difference between its DFA scaling exponent and 0.5. Our method can also be applied to other financial or physical variables and other multifractal formalisms.Comment: 6 epl page

Transport Properties, Thermodynamic Properties, and Electronic Structure of SrRuO3

SrRuO$_3$ is a metallic ferromagnet. Its electrical resistivity is reported for temperatures up to 1000K; its Hall coefficient for temperatures up to 300K; its specific heat for temperatures up to 230K. The energy bands have been calculated by self-consistent spin-density functional theory, which finds a ferromagnetic ordered moment of 1.45$\mu_{{\rm B}}$ per Ru atom. The measured linear specific heat coefficient $\gamma$ is 30mJ/mole, which exceeds the theoretical value by a factor of 3.7. A transport mean free path at room temperature of $\approx 10 \AA$ is found. The resistivity increases nearly linearly with temperature to 1000K in spite of such a short mean free path that resistivity saturation would be expected. The Hall coefficient is small and positive above the Curie temperature, and exhibits both a low-field and a high-field anomalous behavior below the Curie temperature.Comment: 6 pages (latex) and 6 figures (postscript, uuencoded.) This paper will appear in Phys. Rev. B, Feb. 15, 199

Magnetotransport in manganite trilayer junctions grown by 90° off-axis sputtering

We report magnetotransport studies on La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3 trilayer junctions, fabricated using 90° off-axis sputtering. Films were grown on both (001) (LaAlO3)0.3–(Sr2AlTaO6)0.7(LaAlO3)0.3–(Sr2AlTaO6)0.7 and (110) NdGaO3NdGaO3 substrates. The sputtered trilayers show improved junction resistance uniformity over those made using pulsed laser deposition. Cross-sectional transmission electron microscopy and atomic force microscopy studies confirm smooth interfaces and a uniform barrier. Magnetoresistances up to ∼100% are observed for junctions on (001) (LaAlO3)0.3–(Sr2AlTaO6)0.7(LaAlO3)0.3–(Sr2AlTaO6)0.7 with a 30 Å barrier at 13 K and around 100 Oe. Junction magnetoresistance versus magnetic field behavior is more stable, indicating improved transport and magnetic homogeneity across the junction. © 2001 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70148/2/APPLAB-79-2-233-1.pd

Автоматизация создания перехватчиков событий в системе управления проектами Team Foundation Server с помощью Rest API для Visual Studio Team Services и Team Foundation Server

В данной статье рассмотрен метод автоматизации процесса создания перехватчиков событий для проектов в системе управления проектами Team Foundation Server с помощью REST API для Visual Studio Team Services и Team Foundation Server. В качестве примера рассмотрено создание перехватчика событий для проектов, работающий с системами контроля версий TFVC. This article describes the method of automation of the service hook setting process for projects in the Project Management System Team Foundation Server using the REST API for Visual Studio Team Services and Team Foundation Server. By way of example, the creation of the service hook for projects operating with TFVC version control systems is considered