Electrostatic Power Generation from Negatively Charged, Simulated Lunar Regolith

Research was conducted to develop an electrostatic power generator for future lunar missions that facilitate the utilization of lunar resources. The lunar surface is known to be negatively charged from the constant bombardment of electrons and protons from the solar wind. The resulting negative electrostatic charge on the dust particles, in the lunar vacuum, causes them to repel each other minimizing the potential. The result is a layer of suspended dust about one meter above the lunar surface. This phenomenon was observed by both Clementine and Surveyor spacecrafts. During the Apollo 17 lunar landing, the charged dust was a major hindrance, as it was attracted to the astronauts' spacesuits, equipment, and the lunar buggies. The dust accumulated on the spacesuits caused reduced visibility for the astronauts, and was unavoidably transported inside the spacecraft where it caused breathing irritation [1]. In the lunar vacuum, the maximum charge on the particles can be extremely high. An article in the journal "Nature", titled "Moon too static for astronauts?" (Feb 2, 2007) estimates that the lunar surface is charged with up to several thousand volts [2]. The electrostatic power generator was devised to alleviate the hazardous effects of negatively charged lunar soil by neutralizing the charged particles through capacitive coupling and thereby simultaneously harnessing power through electric charging [3]. The amount of power generated or collected is dependent on the areal coverage of the device and hovering speed over the lunar soil surface. A thin-film array of capacitors can be continuously charged and sequentially discharged using a time-differentiated trigger discharge process to produce a pulse train of discharge for DC mode output. By controlling the pulse interval, the DC mode power can be modulated for powering devices and equipment. In conjunction with a power storage system, the electrostatic power generator can be a power source for a lunar rover or other systems. The negatively charged lunar soil would also be neutralized mitigating some of the adverse effects resulting from lunar dust

Crystal Lattice Controlled SiGe Thermoelectric Materials with High Figure of Merit

Direct energy conversion between thermal and electrical energy, based on thermoelectric (TE) effect, has the potential to recover waste heat and convert it to provide clean electric power. The energy conversion efficiency is related to the thermoelectric figure of merit ZT expressed as ZT=S(exp 2)(sigma)T/Kappa, T is temperature, S is the Seebeck coefficient, sigma is conductance and Kappa is thermal conductivity. For a lower thermal conductivity Kappa and high power factor (S(exp 2)(sigma)), our current strategy is the development of rhombohedrally strained single crystalline SiGe materials that are highly [111]-oriented twinned. The development of a SiGe "twin lattice structure (TLS)" plays a key role in phonon scattering. The TLS increases the electrical conductivity and decreases thermal conductivity due to phonon scattering at stacking faults generated from the 60 X rotated primary twin structure. To develop high performance materials, the substrate temperature, chamber working pressure, and DC sputtering power are controlled for the aligned growth production of SiGe layer and TLS on a c-plane sapphire. Additionally, a new elevated temperature thermoelectric characterization system, that measures the thermal diffusivity and Seebeck effect nondestructively, was developed. The material properties were characterized at various temperatures and optimized process conditions were experimentally determined. The present paper encompasses the technical discussions toward the development of thermoelectric materials and the measurement techniques

Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance

X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth

System to Measure Thermal Conductivity and Seebeck Coefficient for Thermoelectrics

The Seebeck coefficient, when combined with thermal and electrical conductivity, is an essential property measurement for evaluating the potential performance of novel thermoelectric materials. However, there is some question as to which measurement technique(s) provides the most accurate determination of the Seebeck coefficient at elevated temperatures. This has led to the implementation of nonstandardized practices that have further complicated the confirmation of reported high ZT materials. The major objective of the procedure described is for the simultaneous measurement of the Seebeck coefficient and thermal diffusivity within a given temperature range. These thermoelectric measurements must be precise, accurate, and reproducible to ensure meaningful interlaboratory comparison of data. The custom-built thermal characterization system described in this NASA-TM is specifically designed to measure the inplane thermal diffusivity, and the Seebeck coefficient for materials in the ranging from 73 K through 373 K

Perspective and Potential of Smart Optical Materials

The increasing requirements of hyperspectral imaging optics, electro/photo-chromic materials, negative refractive index metamaterial optics, and miniaturized optical components from microscale to quantum-scale optics have all contributed to new features and advancements in optics technology. Development of multifunctional capable optics has pushed the boundaries of optics into new fields that require new disciplines and materials to maximize the potential benefits. The purpose of this study is to understand and show the fundamental materials and fabrication technology for field-controlled spectrally active optics (referred to as smart optics) that are essential for future industrial, scientific, military, and space applications, such as membrane optics, light detection and ranging (LIDAR) filters, windows for sensors and probes, telescopes, spectroscopes, cameras, light valves, light switches, and flat-panel displays. The proposed smart optics are based on the Stark and Zeeman effects in materials tailored with quantum dot arrays and thin films made from readily polarizable materials via ferroelectricity or ferromagnetism. Bound excitonic states of organic crystals are also capable of optical adaptability, tunability, and reconfigurability. To show the benefits of smart optics, this paper reviews spectral characteristics of smart optical materials and device technology. Experiments testing the quantum-confined Stark effect, arising from rare earth element doping effects in semiconductors, and applied electric field effects on spectral and refractive index are discussed. Other bulk and dopant materials were also discovered to have the same aspect of shifts in spectrum and refractive index. Other efforts focus on materials for creating field-controlled spectrally smart active optics (FCSAO) on a selected spectral range. Surface plasmon polariton transmission of light through apertures is also discussed, along with potential applications. New breakthroughs in micro scale multiple zone plate optics as a micro convex lens are reviewed, along with the newly discovered pseudo-focal point not predicted with conventional optics modeling. Micron-sized solid state beam scanner chips for laser waveguides are reviewed as well

Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides

Quantum wells (QWs), enabling effective exciton confinement and strong light-matter interaction, form an essential building block for quantum optoelectronics. For two-dimensional (2D) semiconductors, however, constructing the QWs is still challenging because suitable materials and fabrication techniques are lacking for bandgap engineering and indirect bandgap transitions occur at the multilayer. Here, we demonstrate an unexplored approach to fabricate atomic-layer-confined multiple QWs (MQWs) via monolithic bandgap engineering of transition metal dichalcogenides and van der Waals stacking. The WOX/WSe2 hetero-bilayer formed by monolithic oxidation of the WSe2 bilayer exhibited the type I band alignment, facilitating as a building block for MQWs. A superlinear enhancement of photoluminescence with increasing the number of QWs was achieved. Furthermore, quantum-confined radiative recombination in MQWs was verified by a large exciton binding energy of 193 meV and a short exciton lifetime of 170 ps. This work paves the way toward monolithic integration of band-engineered hetero-structures for 2D quantum optoelectronics

Recent progresses in the growth of two-dimensional transition metal dichalcogenides

© 2019 Korean Ceramic Society. All Rights Reserved.Recently, considerable progress and many breakthroughs have been achieved in the growth of two-dimensional materials, especially transition metal dichalcogenides (TMDCs), which attract significant attention owing to their unique properties originating from their atomically thin layered structure. Chemical vapor deposition (CVD) has shown great promise to fabricate large-scale and high-quality TMDC films with exceptional electronic and optical properties. However, the scalable growth of high-quality TMDCs by CVD is yet to meet industrial criteria. Therefore, growth mechanisms should be unveiled for a deeper understanding and further improvement of growth methods are required. This review summarizes the recent progress in the growth methods of TMDCs through CVD and other modified approaches to gain insights into the growth of large-scale and high-quality TMDCs.N

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm2/V·s, p-type Ge: 2200 cm2/V·s, n-type Si: 1300 cm2/V·s, and n-type Ge: 3000 cm2/V·s at 1016 per cm3 doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe on c-plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the [111] direction of cubic SiGe on top of the [0001] direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe on c-plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm2/V·s which is between 350 cm2/V·s (Si) and 1550 cm2/V·s (Ge) at 6 × 1017/cm3 doping concentration