Beyond Classification: Financial Reasoning in State-of-the-Art Language Models

Large Language Models (LLMs), consisting of 100 billion or more parameters, have demonstrated remarkable ability in complex multi-step reasoning tasks. However, the application of such generic advancements has been limited to a few fields, such as clinical or legal, with the field of financial reasoning remaining largely unexplored. To the best of our knowledge, the ability of LLMs to solve financial reasoning problems has never been dealt with, and whether it can be performed at any scale remains unknown. To address this knowledge gap, this research presents a comprehensive investigation into the potential application of LLMs in the financial domain. The investigation includes a detailed exploration of a range of subjects, including task formulation, synthetic data generation, prompting methods, and evaluation capability. Furthermore, the study benchmarks various GPT variants with parameter scales ranging from 2.8B to 13B, with and without instruction tuning, on diverse dataset sizes. By analyzing the results, we reveal that the ability to generate coherent financial reasoning first emerges at 6B parameters, and continues to improve with better instruction-tuning or larger datasets. Additionally, the study provides a publicly accessible dataset named sFIOG (Synthetic-Financial Investment Opinion Generation), consisting of 11,802 synthetic investment thesis samples, to support further research in the field of financial reasoning. Overall, this research seeks to contribute to the understanding of the efficacy of language models in the field of finance, with a particular emphasis on their ability to engage in sophisticated reasoning and analysis within the context of investment decision-making.Comment: Under Revie

Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

The effective synthesis of two-dimensional transition metal dichalcogenides alloy is essential for successful application in electronic and optical devices based on a tunable band gap. Here we show a synthesis process for Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> alloy using sulfurization of super-cycle atomic layer deposition Mo<inf>1-x</inf>W<inf>x</inf>O<inf>y</inf>. Various spectroscopic and microscopic results indicate that the synthesized Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> alloys have complete mixing of Mo and Watoms and tunable band gap by systematically controlled composition and layer number. Based on this, we synthesize a vertically composition-controlled (VCC) Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> multilayer using five continuous super-cycles with different cycle ratios for each super-cycle. Angle-resolved X-ray photoemission spectroscopy, Raman and ultraviolet-visible spectrophotometer results reveal that a VCC Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> multilayer has different vertical composition and broadband light absorption with strong interlayer coupling within a VCC Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> multilayer. Further, we demonstrate that a VCC Mo<inf>1-x</inf>W<inf>x</inf>S<inf>2</inf> multilayer photodetector generates three to four times greater photocurrent than MoS<inf>2</inf>-and WS<inf>2</inf>-based devices, owing to the broadband light absorption. © 2015 Macmillan Publishers Limitedopen1

Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor

A carbon tetrabromide (CBr4) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO2/Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr4 precursor. Thus, CBr4 precursor is a new alternative candidate for use in the mass production of graphene. (C) 2015 Elsevier B.V. All rights reserved

Fabrication of Transferable Al2O3 Nanosheet by Atomic Layer Deposition for Graphene FET

Without introducing defects in the monolayer of carbon lattice, the deposition of high-kappa dielectric material is a significant challenge because of the difficulty of high-quality oxide nucleation on graphene. Previous investigations of the deposition of high-kappa dielectrics on graphene have often reported significant degradation of the electrical properties of graphene. In this study, we report a new way to integrate high-kappa dielectrics with graphene by transferring a high-kappa dielectric nanosheet onto graphene. Al2O3 film was deposited on a sacrificial layer using an atomic layer deposition process and the Al2O3 nanosheet was fabricated by removing the sacrificial layer. Top-gated graphene field-effect transistors were fabricated and characterized using the Al2O3 nanosheet as a gate dielectric. The top-gated graphene was demonstrated to have a field-effect mobility up to 2200 cm(2)/(V s). This method provides a new method for high-performance graphene devices with broad potential impacts reaching from high-frequency high-speed circuits to flexible electronics

Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition

The synthesis of atomically thin transition-metal disulfides (MS2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS2 nanosheets through the sulfurization of an atomic layer deposition (AID) WO, film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the AID-based WS2 nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS2 measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS2, and the subthreshold swing is comparable to that of an exfoliated MoS2 FET device. Moreover, by utilizing the high conformality of the AID process, we have developed a process for the fabrication of WS2 nanotubes

Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

The deposition of high-quality ZrO2 films has been achieved using both pulsed plasma-enhanced chemical vapor deposition (P-PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) with (C5H5)Zr[N(CH3)(2)](3) as a Zr precursor. The authors compared the growth characteristics, chemical compositions, and electrical properties of P-PE-CVD and PE-ALD ZrO2 prepared under various deposition conditions. The ZrO2 films prepared using both methods showed high purity and good stoichiometry. Electrical characterization of a metal-oxide-semiconductor capacitor utilizing the ZrO2 films showed that PE-ALD films have a relatively lower leakage current than P-PE-CVD films, whereas the dielectric constant, interface trap density, and hysteresis of both films are similar. Applying both methods, the electrical properties of ZrO2 films were also evaluated using In-Ga-Zn-O thin-film transistors (TFTs), which showed a good device performance in terms of high I-on-I-off ratios (> 10(8)) and low off-currents (< 10(-11) A). In addition, ZrO2-based TFT showed high reliability against a negative V-th shift. Based on the self-limiting growth characteristics and electrical properties of P-PE-CVD, the authors found that the P-PE-CVD process results in electrical properties comparable to those of PE-ALD ZrO2 films. Thus, the authors believe that P-PECVD can be an alternative process to PE-ALD for future electronic device applications, especially for display applications due to its good electrical properties with high throughput. (C) 2017 American Vacuum Society

Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

We investigated nucleation and growth characteristics of atomic layer deposition (ALD) HfO2 on exfoliated and chemical vapor deposition (CVD) graphene by using two Hf precursors, tetrakis(dimethylamino)hafnium (TDMAH) and hafnium tetrachloride (HfCl4). Experimental results and theoretical calculations indicate that HfO2 nucleation is more favorable on CVD graphene than on exfoliated graphene due to the existence of defect sites. Also, the TDMAH precursor showed much more unfavorable nucleation and growth than HfCl4 due to different initial adsorption mechanisms, affecting lower leakage currents and breakdown electric field. ALD growth characteristics of HfO2 will be fundamentally and practically significant for realizing the fabrication of graphene-based electronic devicesclose0

Fabrication of Transferable Al₂O₃ Nanosheet by Atomic Layer Deposition for Graphene FET

Without introducing defects in the monolayer of carbon lattice, the deposition of high-κ dielectric material is a significant challenge because of the difficulty of high-quality oxide nucleation on graphene. Previous investigations of the deposition of high-κ dielectrics on graphene have often reported significant degradation of the electrical properties of graphene. In this study, we report a new way to integrate high-κ dielectrics with graphene by transferring a high-κ dielectric nanosheet onto graphene. Al₂O₃ film was deposited on a sacrificial layer using an atomic layer deposition process and the Al₂O₃ nanosheet was fabricated by removing the sacrificial layer. Top-gated graphene field-effect transistors were fabricated and characterized using the Al₂O₃ nanosheet as a gate dielectric. The top-gated graphene was demonstrated to have a field-effect mobility up to 2200 cm²/(V s). This method provides a new method for high-performance graphene devices with broad potential impacts reaching from high-frequency high-speed circuits to flexible electronics

Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition

The synthesis of atomically thin transition-metal disulfides (MS₂) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS₂ nanosheets through the sulfurization of an atomic layer deposition (ALD) WO₃ film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the ALD-based WS₂ nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS₂ measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS₂, and the subthreshold swing is comparable to that of an exfoliated MoS₂ FET device. Moreover, by utilizing the high conformality of the ALD process, we have developed a process for the fabrication of WS₂ nanotubes