7 research outputs found
Spreading solutions for a reaction diffusion equation with free boundaries in time-periodic environmen
In this article, we consider a reaction diffusion equation with free boundaries
in a time-periodic environment. Such models can be used to describe
the spreading of a new or invasive species over a one-dimensional habitat,
with the free boundaries representing the expanding fronts.
We study an equation with a general time-periodic nonlinearity, and present
some sufficient conditions for spreading phenomena.
We also use time-periodic semi-waves to characterize the spreading solutions
Content Determination of Active Component in Huangqi Yinyanghuo Group and Its Effects on hTERT and Bcl-2 Protein in Osteosarcoma
To screen the optimal extraction process and content determination of active component of Huangqi Yinyanghuo group (HYG) and to study the effects of HYG on human telomerase reverse transcriptase (hTERT) and Bcl-2 protein in osteosarcoma (HOS) cells, providing the theoretical basis for clinical application of HYG in treatment of osteosarcoma, orthogonal design table L9(43) was used to design the extraction process of HYG, and icariin was taken as the investigation index to optimize the extraction process of HYG. 0.125, 0.25, 0.5, 1, 2, 4, and 8āĪ¼mol/L HYG were taken to act separately on logarithmic growth phase osteosarcoma HOS cells, CCK-8 assay was used to determine cell viability, and immunohistochemical SP assay was used to determine the expression of hTERT and Bcl-2 protein. Apoptosis rate was positively correlated with the dose of HYG, and the expressions of hTERT and Bcl-2 protein were significantly decreased with the prolonged duration of action. Under the effect of HYG, dose was negatively correlated with osteosarcoma cell survival fraction; osteosarcoma cell survival fraction was positively correlated with hTERT and Bcl-2 protein; duration of action was negatively correlated with hTERT and Bcl-2 protein; and hTERT and Bcl-2 protein were in a synchronous relationship
High-<i>Īŗ</i> van der Waals Oxide MoO<sub>3</sub> as Efficient Gate Dielectric for MoS<sub>2</sub> Field-Effect Transistors
Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO3 is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS2 to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of 105, electron mobility about 85 cm2 Vā1 sā1 and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that MoO3 is a potential material as gate dielectric