Indian Monsoon Depression: Climatology and Variability

The monsoon climate is traditionally characterized by large amount of seasonal rainfall and reversal of wind direction (e.g., Krishnamurti 1979). Most importantly this rainfall is the major source of fresh water to various human activities such as agriculture. The Indian subcontinent resides at the core of the Southeast Asian summer monsoon system with the monsoon trough extended from northern India across Indochina to the Western Tropical Pacific (WTP). Large fraction of annual rainfall occurs during the summer monsoon season, i.e., June – August1, with two distinct maxima. One is located over the Bay of Bengal with rainfall extending northwestward into eastern and central India, and the other along the west coast of India where the lower level moist wind meets the Western Ghat Mountains (Saha and Bavardeckar 1976). The rest of the Indian subcontinent receives relatively less rainfall.https://digitalcommons.usu.edu/modern_climatology/1001/thumbnail.jp

Change‐Point Detection on Solar Panel Performance Using Thresholded LASSO

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/135028/1/qre2077.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/135028/2/qre2077_am.pd

Efficient and specific gene knockdown by small interfering RNAs produced in bacteria

Synthetic small interfering RNAs (siRNAs) are an indispensable tool to investigate gene function in eukaryotic cells1,2 and may be used for therapeutic purposes to knockdown genes implicated in disease3. Thus far, most synthetic siRNAs have been produced by chemical synthesis. Here we present a method to produce highly potent siRNAs in E. coli. This method relies on ectopic expression of p19, a siRNA-binding protein found in a plant RNA virus4, 5. When expressed in E. coli, p19 stabilizes ~21 nt siRNA-like species produced by bacterial RNase III. Transfection of mammalian cells with siRNAs, generated in bacteria expressing p19 and a hairpin RNA encoding 200 or more nucleotides of a target gene, at low nanomolar concentrations reproducibly knocks down gene expression by ~90% without immunogenicity or off-target effects. Because bacterially produced siRNAs contain multiple sequences against a target gene, they may be especially useful for suppressing polymorphic cellular or viral genes

Wafer-scale fabrication of 2D nanostructures via thermomechanical nanomolding

With shrinking dimensions in integrated circuits, sensors, and functional devices, there is a pressing need to develop nanofabrication techniques with simultaneous control of morphology, microstructure, and material composition over wafer length scales. Current techniques are largely unable to meet all these conditions, suffering from poor control of morphology and defect structure or requiring extensive optimization or post-processing to achieve desired nanostructures. Recently, thermomechanical nanomolding (TMNM) has been shown to yield single-crystalline, high aspect ratio nanowires of metals, alloys, and intermetallics over wafer-scale distances. Here, we extend TMNM for wafer-scale fabrication of 2D nanostructures. Using Cu, we successfully nanomold Cu nanoribbons with widths < 50 nm, depths ~ 0.5-1 microns and lengths ~ 7 mm into Si trenches at conditions compatible with back end of line processing. Through SEM cross-section imaging and 4D-STEM grain orientation maps, we show that the grain size of the bulk feedstock is transferred to the nanomolded structures up to and including single crystal Cu. Based on the retained microstructures of molded 2D Cu, we discuss the deformation mechanism during molding for 2D TMNM.Comment: 4 figure

Autotransplantation of Inferior Parathyroid glands during central neck dissection for papillary thyroid carcinoma: A retrospective cohort study

AbstractIntroduction: The management of inferior parathyroid glands during central neck dissection (CND) for papillary thyroid carcinoma (PTC) remains controversial. Most surgeons preserve inferior parathyroid glands in situ. Autotransplantation is not routinely performed unless devascularization or inadvertent parathyroidectomy occurs. This retrospective study aimed to compare the incidence of postoperative hypoparathyroidism and central neck lymph node (CNLN) recurrence in patients with PTC who underwent inferior parathyroid glands autotransplantation vs preservation in situ. Methods: This is a retrospective study which was conducted in a tertiary referral hospital. A total of 477 patients with PTC (pN1) who underwent total thyroidectomy (TT) and bilateral CND with/without lateral neck dissection were included. Patients' demographical characteristics, tumor stage, incidence of hypoparathyroidism, CNLN recurrence and the number of resected CNLN were analyzed. Results: Three hundred and twenty-one patients underwent inferior parathyroid glands autotransplantation (autotransplantation group). Inferior parathyroid glands were preserved in situ among 156 patients (preservation group). Permanent hypoparathyroidism rate was 0.9% (3/321) versus 3.8% (6/156) respectively (p = 0.028). Mean numbers of resected CNLN were 15 ± 3 (6–23) (autotransplantation group) versus 11 ± 3 (7–21) (preservation group) (p < 0.001). CNLN recurrence rate was 0.3% (1/321) versus 3.8% (6/156) respectively (p = 0.003). Conclusion: Inferior parathyroid glands autotransplantation during CND of PTC (pN1) might reduce permanent hypoparathyroidism and CNLN recurrence. Further study enrolling more patients with long-term follow-up is needed to support this conclusion

Optical gain in GaAsBi/GaAs quantum well diode lasers

Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly impact upon the device performance. Suppression of these loss mechanisms promises to lead to highly efficient, uncooled operation of telecommunications lasers, making GaAsBi system a strong candidate for the development of next-generation semiconductor lasers. In this report we present the first experimentally measured optical gain, absorption and spontaneous emission spectra for GaAsBi-based quantum well laser structures. We determine internal optical losses of 10–15 cm−1 and a peak modal gain of 24 cm−1, corresponding to a material gain of approximately 1500 cm−1 at a current density of 2 kA cm−2. To complement the experimental studies, a theoretical analysis of the spontaneous emission and optical gain spectra is presented, using a model based upon a 12-band k.p Hamiltonian for GaAsBi alloys. The results of our theoretical calculations are in excellent quantitative agreement with the experimental data, and together provide a powerful predictive capability for use in the design and optimisation of high efficiency lasers in the infrared

Topological Metal MoP Nanowire for Interconnect

The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising material candidates to potentially replace current Cu interconnects as low-resistance interconnects. Here, we report the attractive resistivity scaling of topological metal MoP nanowires and show that the resistivity values are comparable to those of Cu interconnects below 500 nm$^2$ cross-section areas. More importantly, we demonstrate that the dimensional scaling of MoP nanowires, in terms of line resistance versus total cross-sectional area, is superior to those of effective Cu and barrier-less Ru interconnects, suggesting MoP is an attractive solution to the current scaling challenge of Cu interconnects.Comment: 4 figure

1D-confined crystallization routes for tungsten phosphides

Topological materials confined in one-dimension (1D) can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystallization of 1D-confined topological materials is critical. Here, we demonstrate 1D-confined crystallization routes during template-assisted nanowire synthesis where we observe diameter-dependent phase selectivity for topological metal tungsten phosphides. A phase bifurcation occurs to produce tungsten monophosphide and tungsten diphosphide at the cross-over nanowire diameter of ~ 35 nm. Four-dimensional scanning transmission electron microscopy was used to identify the two phases and to map crystallographic orientations of grains at a few nm resolution. The 1D-confined phase selectivity is attributed to the minimization of the total surface energy, which depends on the nanowire diameter and chemical potentials of precursors. Theoretical calculations were carried out to construct the diameter-dependent phase diagram, which agrees with experimental observations. Our find-ings suggest a new crystallization route to stabilize topological materials confined in 1D.Comment: 5 figure