Effects of Magnetic Field and Temperature on the Critical Current Hysteresis in Tl-Ca-Ba-Cu-O Thin Films

The behavior of the critical current density of Tl-Ca-Ba-Cu-O superconducting thin films in a cycling magnetic field was investigated. The hysteresis of the transport Jc manifested similar features to those found in polycrystalline Y-Ba-Cu-O and granular Nb, Al thin films in zero-field cooling. However, a novel result of the transport Jc in field-cooled samples has been observed. The results were attributed to the presence of a saturated trapped magnetic flux in the weaklink network. The effects of temperature on both the trapped flux and the transport Jc suggest the existence of various states of the trapped flux in the Tl-based superconducting thin films

Scanned Probe Oxidation onp-GaAs(100) Surface with an Atomic Force Microscopy

Locally anodic oxidation has been performed to fabricate the nanoscale oxide structures onp-GaAs(100) surface, by using an atomic force microscopy (AFM) with the conventional and carbon nanotube (CNT)-attached probes. The results can be utilized to fabricate the oxide nanodots under ambient conditions in noncontact mode. To investigate the conversion of GaAs to oxides, micro-Auger analysis was employed to analyze the chemical compositions. The growth kinetics and the associated mechanism of the oxide nanodots were studied under DC voltages. With the CNT-attached probe the initial growth rate of oxide nanodots is in the order of ~300 nm/s, which is ~15 times larger than that obtained by using the conventional one. The oxide nanodots cease to grow practically as the electric field strength is reduced to the threshold value of ~2 × 107 V cm−1. In addition, results indicate that the height of oxide nanodots is significantly enhanced with an AC voltage for both types of probes. The influence of the AC voltages on controlling the dynamics of the AFM-induced nanooxidation is discussed

Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures

Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire

The mechanical properties and deformation behaviors of AlN thin films deposited on c-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nanoindentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the “pop-ins” phenomena during nanoindentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nanoindentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young’s modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively

Surface Analysis and Optical Properties of Cu-Doped ZnO Thin Films Deposited by Radio Frequency Magnetron Sputtering

In this study, Cu-doped ZnO (CZO) thin films were grown on glass substrates by using the radio frequency magnetron sputtering technique. The effects of Cu doping on the structural, surface morphological, optical properties, and wettability behaviors of CZO thin films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Visible spectroscopy, and contact angle measurement, respectively. The XRD results indicated that all CZO thin films were textured, having a preferential crystallographic orientation along the hexagonal wurtzite (002) axis. The average transmittance in the visible wavelength region was above 80% for all CZO thin films. The optical band gap of the CZO films decreased from 3.18 to 2.85 eV when the Cu-doping was increased from 2% to 10%. In addition, the water contact angle measurements were carried out to delineate the Cu-doping effects on the changes in the surface energy and wettability of the films