409 research outputs found
Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots
We report measurements consistent with the valley Kondo effect in Si/SiGe
quantum dots, evidenced by peaks in the conductance versus source-drain voltage
that show strong temperature dependence. The Kondo peaks show unusual behavior
in a magnetic field that we interpret as arising from the valley degree of
freedom. The interplay of valley and Zeeman splittings is suggested by the
presence of side peaks, revealing a zero-field valley splitting between 0.28 to
0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a
phenomenon consistent with valley non- conservation in tunneling, is observed
in two samples.Comment: 16 pages, 7 figure
Suppression of Decoherence and Disentanglement by the Exchange Interaction
Entangled qubit pairs can serve as a quantum memory or as a resource for
quantum communication. The utility of such pairs is measured by how long they
take to disentangle or decohere. To answer the question of whether qubit-qubit
interactions can prolong entanglement, we calculate the dissipative dynamics of
a pair of qubits coupled via the exchange interaction in the presence of random
telegraph noise and noise. We show that for maximally entangled (Bell)
states, the exchange interaction generally suppresses decoherence and
disentanglement. This suppression is more apparent for random telegraph noise
if the noise is non-Markovian, whereas for noise the exchange interaction
should be comparable in magnitude to strongest noise source. The entangled
singlet-triplet superposition state of 2 qubits ( Bell state) can
be protected by the interaction, while for the triplet-triplet state
( Bell state), it is less effective. Thus the former is more
suitable for encoding quantum information
Theory of Optical Orientation in n-Type Semiconductors
Time resolved measurements of magnetization in n-GaAs have revealed a rich
array of spin decoherence processes, and have shown that fairly long lifetimes
(\sim 100 ns) can be achieved under certain circumstances. In time-resolved
Faraday rotation and time-resolved Kerr rotation the evolution of the
magnetization can be followed as a function of temperature, applied field,
doping level and excitation level. We present a theory for the spin relaxation
in n-GaAs based on a set of rate equations for two interacting thermalized
subsystems of spins: localized states on donor sites and itinerant states in
the conduction band. The conduction band spins relax by scattering from defects
or phonons through the D'yakonov-Perel' mechanism, while the localized spins
relax by interacting with phonons (when in an applied field) or through the
Dzyaloshinskii-Moriya interaction. In this model, numerous features of the
data, including puzzling temperature and doping dependences of the relaxation
time, find an explanation.Comment: 4 pages, 2 figures; revised version has a more complete discussion of
the Elliott-Yafet and spin-phonon decay mechanism
Phase diagram of UPt in the model
The phase diagram of the unconventional superconductor UPt is explained
under the long-standing hypothesis that the pair wavefunction belongs to the
representation of the point group. The main objection to this theory
has been that it disagrees with the experimental phase diagram when a field is
applied along the c-axis. By a careful analysis of the free energy this
objection is shown to be incorrect. This singlet theory also explains the
unusual anisotropy in the upper critical field curves, often thought to
indicate a triplet pair function.Comment: 11 pages, Revtex, 2 figures (uuencoded, gzip'ed Postscript
Theory of Electron Spin Relaxation in ZnO
Doped ZnO is a promising material for spintronics applications. For such
applications, it is important to understand the spin dynamics and particularly
the spin coherence of this II-VI semiconductor. The spin lifetime
has been measured by optical orientation experiments, and it shows a surprising
non-monotonic behavior with temperature. We explain this behavior by invoking
spin exchange between localized and extended states. Interestingly, the effects
of spin-orbit coupling are by no means negligible, in spite of the relatively
small valence band splitting. This is due to the wurtzite crystal structure of
ZnO. Detailed analysis allows us to characterize the impurity binding energies
and densities, showing that optical orientation experiments can be used as a
characterization tool for semiconductor samples.Comment: 7 pages, 1 figure: minor changes Accepted by Phys. Rev.
Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
We investigate the lifetime of two-electron spin states in a few-electron
Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge
occupations, Pauli spin blockade provides a readout mechanism for the spin
state. We use the statistics of repeated single-shot measurements to extract
the lifetimes of multiple states simultaneously. At zero magnetic field, we
find that all three triplet states have equal lifetimes, as expected, and this
time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T-
lifetime increases monotonically with field, reaching 3 seconds at 1 T.Comment: 4 pages, 3 figures, supplemental information. Typos fixed; updated to
submitted versio
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