208 research outputs found

    Ground and space based optical analysis of materials degradation in low-Earth-orbit

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    There is strong interest in being able to accurately and sensitively monitor materials degradation in both ground-based and space-based environments. Two optical techniques for sensitive degradation monitoring are reviewed: spectroscopic ellipsometry and photothermal spectroscopy. These techniques complement each other in that ellipsometry is sensitive to atomically thin surface and subsurface changes, and photothermal spectroscopy is sensitive to local defects, pin-holes, subsurface defects, and delamination. Progress in applying these spectroscopies (both ex situ and in situ) to atomic oxygen degradation of space materials is reviewed

    ELLIPSOMETER/POLARMETERBASED PROCESS MONITOR AND CONTROL SYSTEM SUITABLE FOR SIMULTANEOUS RETROFIT ON MOLECULAR BEAM EPITAXY SYSTEM RHEED/LEED INTERFACE SYSTEM, AND METHOD OF USE

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    A method of, and system for applying light beam producing systems, such as ellipsometers, polarimeters, polarized light reflectance and functionally similar systems, such that a beam of light produced thereby is caused to be incident upon a process element at an angle in excess of an associated Brewster angle while enabling the production of a signal sufficiently sensitive to changes in process element parameters, for use in real-time process element process monitoring and control, is disclosed. In addition, a process element processing system and electron beam producing system and light beam producing system combination system is taught, wherein the electron beam producing and light beam producing systems are mounted to the process element processing system (typically a (MBE) system), by input and output interface system present at a location appropriate for conventional Reflection High Energy Electron Diffraction (RHEED) systems

    APPLICATION OF INTERMEDIATE WAVELENGTH BAND SPECTROSCOPIC ELLIPSOMETRY TO IN-STU. REAL TIME FABRICATION OF MULTIPLE LAYER ALTERNATING HGHALOW REFRACTIVE INDEX FILTERS

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    Disclosed is application of oblique angle of incidence, reflection and/or transmission mode spectroscopic ellipsometry PSI and/or DELTA, (including combinations thereof and/or mathematical equivalents), vs. wavelength data over an intermediate wavelength band range around a pass or reject band, to monitor and/or control fabrication of multiple layer high/low refractive index band-pass, band-reject and varied attenuation vs. wavelength thin film interference filters, either alone or in combination with transmissive non-ellipsometric electromagnetic beam turning point vs. layer data obtained at an essentially normal angle of incidence

    Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation

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    Optical constant spectra for silicon and thermally grown silicon dioxide have been simultaneously determined using variable angle of incidence spectroscopic ellipsometry from 0.75 to 6.5 eV. Spectroscopic ellipsometric data sets acquired at multiple angles of incidence from seven samples with oxide thicknesses from 2 to 350 nm were analyzed using a self-contained multi-sample technique to obtain Kramers–Kronig consistent optical constant spectra. The investigation used a systematic approach utilizing optical models of increasing complexity in order to investigate the need for fitting the thermal SiO2 optical constants and including an interface layer between the silicon and SiO2 in modeling the data. A detailed study was made of parameter correlation effects involving the optical constants used for the interface layer. The resulting thermal silicon dioxide optical constants were shown to be independent of the precise substrate model used, and were found to be approximately 0.4% higher in index than published values for bulk glasseous SiO2. The resulting silicon optical constants are comparable to previous ellipsometric measurements in the regions of overlap, and are in agreement with long wavelength prism measurements and transmission measurements near the band gap

    APPLICATIONOFSPECTROSCOPIC ELLIPSOMETRY TO IN-STU. REAL-TIME FABRICATION OF MULTIPLE LAYER ALTERNATING HIGH/LOW REFRACTIVE INDEX FILTERS

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    Disclosed is application of oblique angle of incidence, reflection and/or transmission mode spectroscopic ellipsometry PSI and/or DELTA, (including combinations thereof and/or mathematical equivalents), vs. wavelength data to monitor and/or control fabrication of multiple layer high/low refractive index band-pass, band-reject and varied attenuation vs. wavelength filters, either alone or in combination with transmissive non-ellipsometric electromagnetic beam turning point vs. layer data obtained at an essentially normal angle of incidence

    Ellipsometer

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    In an ellipsometer, a phase-modulated, polarized light beam is applied to a sample, electrical signals are obtained representing the orthogonal planes of polarization of the light after it has interacted with the sample and the constants of the sample are calculated from the two resulting electrical signals. The phase modulation is sufficiently small so that the calibration errors are negligible. For this purpose, the phase modulator, phase modulates the light within a range of no more than ten degrees peak to peak. The two electrical signals are expanded by Fourier analysis and the coefficients thereof utilized to calculate psi and delta

    Small modulation ellipsometry

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    In an ellipsometer, a phase-modulated, polarized light beam is applied to a sample, electrical signals are obtained representing the orthogonal planes of polarization of the light after it has interacted with the sample and the constants of the sample are calculated from the two resulting electrical signals. The phase modulation is sufficiently small so that the calibration errors are negligible. For this purpose, the phase modulator phase modulates the light within a range of no more than ten degrees modulations peak to peak. The two electrical signals are expanded by Fourier analysis and the coefficients thereof utilized to calculate psi and delta
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