Gate Coupling to Nanoscale Electronics

The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the singlemolecule ( ~ 1 nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that nonuniform tapered electrodes yield a significant 3 orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

Controlled Doping of Graphene Using Ultraviolet Irradiation

The electronic properties of graphene are tunable via doping, making it attractive in low dimensional organic electronics. Common methods of doping graphene, however, adversely affect charge mobility and degrade device performance. We demonstrate a facile shadow mask technique of defining electrodes on graphene grown by chemical vapor deposition (CVD) thereby eliminating the use of detrimental chemicals needed in the corresponding lithographic process. Further, we report on the controlled, effective, and reversible doping of graphene via ultraviolet (UV) irradiation with minimal impact on charge mobility. The change in charge concentration saturates at ~2 x 1012cm-2 and the quantum yield is 10-5 e/photon upon initial UV exposure. This simple and controlled strategy opens the possibility of doping wafer-size CVD graphene for diverse applications

Photoluminescence and Band Gap Modulation in Graphene Oxide

We report broadband visible photoluminescence from solid graphene oxide, and modifications of the emission spectrum by progressive chemical reduction. The data suggest a gapping of the two-dimensional electronic system by removal of π-electrons. We discuss possible gapping mechanisms, and propose that a Kekule pattern of bond distortions may account for the observed behavior

DNA-decorated carbon nanotube-based FETs as ultrasensitive chemical sensors: Discrimination of homologues, structural isomers, and optical isomers

We have explored the abilities of all-electronic DNA-carbon nanotube (DNA-NT) vapor sensors to discriminate very similar classes ofmolecules.We screened hundreds ofDNA-NT devices against a panel of compounds chosen because of their similarities. We demonstrated that DNA-NT vapor sensors readily discriminate between series of chemical homologues that differ by single methyl groups. DNA-NT devices also discriminate among structural isomers and optical isomers, a trait common in biological olfactory systems, but only recently demonstrated for electronic FET based chemical sensors