Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels

Alloyed and compound contacts between metal and semiconductor transistor channels enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along the channel length, but the early stage of reaction in their cross sections remains unknown. Here, we report on the dynamics of the solid-state reaction between metal (Ni) and semiconductor (In_0.53Ga_0.47As), along the cross-section of nanowires that are 15 nm in width. Unlike planar structures where crystalline nickelide readily forms at conventional, low alloying temperatures, nanowires exhibit a solid-state amorphization step that can undergo a crystal regrowth step at elevated temperatures. In this study, we capture the layer-by-layer reaction mechanism and growth rate anisotropy using in situ transmission electron microscopy (TEM). Our kinetic model depicts this new, in-plane contact formation which could pave the way for engineered nanoscale transistors

Bilayer Metasurfaces for Dual- and Broadband Optical Antireflection

Optical antireflection has long been pursued for a wide range of applications, but existing approaches encounter issues in the performance, bandwidth, and structure complexity, particularly in the long-wavelength infrared regime. Here we present the demonstration of bilayer metasurfaces that accomplish dual- and broadband optical antireflection in the terahertz and mid-infrared spectral ranges. By simply tailoring the structural geometry and dimensions, we show that subwavelength metal/dielectric structures enable dramatic reduction of Fresnel reflection and significant enhancement of transmission at a substrate surface, operating either at two discrete narrow bands or over a broad bandwidth up to 28%. We also use a semianalytical interference model to interpret the obtained results, in which we find that the dispersion of the constituent structures plays a critical role in achieving the observed broadband optical antireflection

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High Density Individually Addressable Nanowire Arrays Record Intracellular Activity from Primary Rodent and Human Stem Cell Derived Neurons

We report a new hybrid integration scheme that offers for the first time a nanowire-on-lead approach, which enables independent electrical addressability, is scalable, and has superior spatial resolution in vertical nanowire arrays. The fabrication of these nanowire arrays is demonstrated to be scalable down to submicrometer site-to-site spacing and can be combined with standard integrated circuit fabrication technologies. We utilize these arrays to perform electrophysiological recordings from mouse and rat primary neurons and human induced pluripotent stem cell (hiPSC)-derived neurons, which revealed high signal-to-noise ratios and sensitivity to subthreshold postsynaptic potentials (PSPs). We measured electrical activity from rodent neurons from 8 days in vitro (DIV) to 14 DIV and from hiPSC-derived neurons at 6 weeks in vitro post culture with signal amplitudes up to 99 mV. Overall, our platform paves the way for longitudinal electrophysiological experiments on synaptic activity in human iPSC based disease models of neuronal networks, critical for understanding the mechanisms of neurological diseases and for developing drugs to treat them