Radiation analysis of SiGe HBT devices and circuits

Issued as final reportSiGe HBT technology has generated significant interest in the space community because it effectively marries high-speeds, high levels of integration, and low cost capability, and initial results suggest that SiGe has a built-in total ionizing dose (TID) immunity. Single event effect (SEE) mitigation remains a key concern for the deployment of SiGe in space. SEE analysis and understanding in SiGe HBTs (and importantly circuits) require a focused and dedicated effort, and is the subject of this proposal. The overall goal of this program is to continue to enhance our understanding of SiGe HBTs (and particularly the circuits built from them) operating in a radiation environment such as space. We focused on a multiple of topics of importance to the space community, with continued emphasis towards more comprehensive understanding and implementation at the circuit and system level. As in the past, Cressler’s close synergy with the major suppliers of SiGe hardware (eg., IBM, Jazz, TI) will be utilized (at no cost to this effort) in the experimental studies supporting this work.Goddard Space Flight Cente

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding Teff of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors’ knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date

Advanced Avionics and Processor Systems for Space and Lunar Exploration

NASA's newly named Advanced Avionics and Processor Systems (AAPS) project, formerly known as the Radiation Hardened Electronics for Space Environments (RHESE) project, endeavors to mature and develop the avionic and processor technologies required to fulfill NASA's goals for future space and lunar exploration. Over the past year, multiple advancements have been made within each of the individual AAPS technology development tasks that will facilitate the success of the Constellation program elements. This paper provides a brief review of the project's recent technology advancements, discusses their application to Constellation projects, and addresses the project's plans for the coming year

A Review of NASA's Radiation-Hardened Electronics for Space Environments Project

NASA's Radiation Hardened Electronics for Space Exploration (RHESE) project develops the advanced technologies required to produce radiation hardened electronics, processors, and devices in support of the requirements of NASA's Constellation program. Over the past year, multiple advancements have been made within each of the RHESE technology development tasks that will facilitate the success of the Constellation program elements. This paper provides a brief review of these advancements, discusses their application to Constellation projects, and addresses the plans for the coming year

High-Performance, Radiation-Hardened Electronics for Space and Lunar Environments

The Radiation Hardened Electronics for Space Environments (RHESE) project develops advanced technologies needed for high performance electronic devices that will be capable of operating within the demanding radiation and thermal extremes of the space, lunar, and Martian environment. The technologies developed under this project enhance and enable avionics within multiple mission elements of NASA's Vision for Space Exploration. including the Constellation program's Orion Crew Exploration Vehicle. the Lunar Lander project, Lunar Outpost elements, and Extra Vehicular Activity (EVA) elements. This paper provides an overview of the RHESE project and its multiple task tasks, their technical approaches, and their targeted benefits as applied to NASA missions

Developments in Radiation-Hardened Electronics Applicable to the Vision for Space Exploration

The Radiation Hardened Electronics for Space Exploration (RHESE) project develops the advanced technologies required to produce radiation hardened electronics, processors, and devices in support of the anticipated requirements of NASA's Constellation program. Methods of protecting and hardening electronics against the encountered space environment are discussed. Critical stages of a spaceflight mission that are vulnerable to radiation-induced interruptions or failures are identified. Solutions to mitigating the risk of radiation events are proposed through the infusion of RHESE technology products and deliverables into the Constellation program's spacecraft designs

Radiation Hardened Electronics for Space Environments (RHESE)

Radiation Environmental Modeling is crucial to proper predictive modeling and electronic response to the radiation environment. When compared to on-orbit data, CREME96 has been shown to be inaccurate in predicting the radiation environment. The NEDD bases much of its radiation environment data on CREME96 output. Close coordination and partnership with DoD radiation-hardened efforts will result in leveraged - not duplicated or independently developed - technology capabilities of: a) Radiation-hardened, reconfigurable FPGA-based electronics; and b) High Performance Processors (NOT duplication or independent development)

Proton tolerance of third-generation, 0.12 m 185 GHz SiGe HBTs

Abstract-We present results on the impact of proton irradiation on the dc and ac characteristics of third-generation, 0.12 m 185 GHz SiGe HBTs. Comparisons with prior technology generations are used to assess how the structural changes needed to enhance performance between second and third generation technology couple to the observed proton response. The results demonstrate that SiGe HBT technologies can successfully maintain their a Mrad-level total dose hardness, without intentional hardening, even when vertically-scaled in order to achieve unprecedented levels of transistor performance