3 research outputs found
Supporting Information: Gas-phase synthesis of iron silicide nanostructures using a single-source precursor: Comparing direct-write processing and thermal conversion [Dataset]
XRD of CVD deposits using the (H3Si)2Fe(CO)4 precursor and additional structural characterization such as TEM images and EDX maps.Peer reviewe
Gas-Phase Synthesis of Iron Silicide Nanostructures Using a Single-Source Precursor: Comparing Direct-Write Processing and Thermal Conversion
The investigation of precursor classes for the fabrication of nanostructures is of specific interest for maskless fabrication and direct nanoprinting. In this study, the differences in material composition depending on the employed process are illustrated for focused-ion-beam- and focused-electron-beam-induced deposition (FIBID/FEBID) and compared to the thermal decomposition in chemical vapor deposition (CVD). This article reports on specific differences in the deposit composition and microstructure when the (H3Si)2Fe(CO)4 precursor is converted into an inorganic material. Maximum metal/metalloid contents of up to 90 at. % are obtained in FIBID deposits and higher than 90 at. % in CVD films, while FEBID with the same precursor provides material containing less than 45 at. % total metal/metalloid content. Moreover, the Fe:Si ratio is retained well in FEBID and CVD processes, but FIBID using Ga+ ions liberates more than 50% of the initial Si provided by the precursor. This suggests that precursors for FIBID processes targeting binary materials should include multiple bonding such as bridging positions for nonmetals. In addition, an in situ method for investigations of supporting thermal effects of precursor fragmentation during the direct-writing processes is presented, and the applicability of the precursor for nanoscale 3D FEBID writing is demonstrated
Gas-Phase Synthesis of Iron Silicide Nanostructures Using a Single-Source Precursor: Comparing Direct-Write Processing and Thermal Conversion
The
investigation of precursor classes for the fabrication of nanostructures
is of specific interest for maskless fabrication and direct nanoprinting.
In this study, the differences in material composition depending on
the employed process are illustrated for focused-ion-beam- and focused-electron-beam-induced
deposition (FIBID/FEBID) and compared to the thermal decomposition
in chemical vapor deposition (CVD). This article reports on specific
differences in the deposit composition and microstructure when the
(H3Si)2Fe(CO)4 precursor is converted
into an inorganic material. Maximum metal/metalloid contents of up
to 90 at. % are obtained in FIBID deposits and higher than 90 at.
% in CVD films, while FEBID with the same precursor provides material
containing less than 45 at. % total metal/metalloid content. Moreover,
the Fe:Si ratio is retained well in FEBID and CVD processes, but FIBID
using Ga+ ions liberates more than 50% of the initial Si
provided by the precursor. This suggests that precursors for FIBID
processes targeting binary materials should include multiple bonding
such as bridging positions for nonmetals. In addition, an in situ
method for investigations of supporting thermal effects of precursor
fragmentation during the direct-writing processes is presented, and
the applicability of the precursor for nanoscale 3D FEBID writing
is demonstrated