Study of the oxygen vacancies changes in SnO2 polycrystalline thick films using impedance and photoemission spectroscopies

Changes in the concentration of oxygen vacancies within the grains of polycrystalline SnO2, due to different atmosphere exposures, were detected using impedance and photoemission spectroscopies. From measured capacitance values, variations of the potential barrier widths could be determined. It is shown that under the presence of an oxygen rich atmosphere, at relatively low temperature, the width of intergranular potential barriers increase to the point that grains become completely depleted of carriers. With subsequent exposure to vacuum, capacitance adopts a higher value, indicative of intergranular barriers and quasi-neutral regions at the center of the grains. X-ray and ultraviolet photoemission spectroscopy measurements showed that SnO2 samples treated in oxidizing or reducing environments have similar barrier heights and different work functions. Results are especially relevant in the study of mechanisms responsible for metal oxide gas sensingFil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Joanni, Ednan. CTI Renato Archer. Sao Paulo; BrasilFil: Williams, Federico Jose. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Química, Física de los Materiales, Medioambiente y Energía; ArgentinaFil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentin

Grain size effect on the electrical response of SnO2 thin and thick film gas sensors

Porous nano and micro crystalline tin oxide films were deposited by RF Magnetron Sputtering and doctor blade techniques, respectively. Electrical resistance and impedance spectroscopy measurements, as a function of temperature and atmosphere, were performed in order to determine the influence of the microstructure and working conditions over the electrical response of the sensors. The conductivity of all samples increases with the temperature and decreases in oxygen, as expected for an n-type semiconducting material. The impedance plots indicated the existence of two time constants related to the grains and the grain boundaries. The Nyquist diagrams at low frequencies revealed the changes that took place in the grain boundary region, with the contribution of the grains being indicated by the formation of a second semicircle at high frequencies. The better sensing performance of the doctor bladed samples can be explained by their lower initial resistance values, bigger grain sizes and higher porosity.Fil: Savu, Raluca. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Joanni, Ednan. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Bueno, Paulo Roberto. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Castro, Miriam Susana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Cilense, Mario. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Varela, Jose Arana. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Longo, Elson. Universidade Estadual Paulista Julio de Mesquita Filho; Brasi

Low-temperature, self-nucleated growth of indium-tin oxide nanostructures by pulsed laser deposition on amorphous substrates

Indium-tin oxide nanostructures were deposited by excimer laser ablation in a nitrogen atmosphere using catalyst-free oxidized silicon substrates at 500 degrees C. Up to 1 mbar, nanowires grew by the vapor-liquid-solid (VLS) mechanism, with the amount of liquid material decreasing as the deposition pressure increased. The nanowires present the single-crystalline cubic bixbyite structure, oriented . For the highest pressure used, pyramids were formed and no sign of liquid material could be observed, indicating that these structures grew by a vapor-solid mechanism. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved

Effect of processing conditions on the nucleation and growth of indium-tin-oxide nanowires made by pulsed laser ablation

Indium-tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized silicon substrates at a low temperature of 500 degrees C in a nitrogen atmosphere. The nanowires have branches with spheres at the tips, indicating a vapor-liquid-solid (VLS) growth. The deposition time and pressure have a strong influence on the areal density and length of the nanowires. At the earlier stages of growth, lower pressures promote a larger number of nucleation centers. With the increase in deposition time, both the number and length of the wires increase up to an areal density of about 70 wires/mu m(2). After this point all the material arriving at the substrate is used for lengthening the existing wires and their branches. The nanowires present the single-crystalline cubic bixbyite structure of indium oxide, oriented in the [100] direction. These structures have potential applications in electrical and optical nanoscale devices

Two seemingly different beginnings of numerical understanding

info:eu-repo/semantics/publishedVersio

Effect of the deposition conditions of platinum electrodes on their performance as resistive heating elements

The performance of different platinum electrodes used as resistive heating elements was studied. Pt films having different thickness were deposited by RF magnetron sputtering at room temperature followed by post-deposition annealing at 700 ºC or made in-situ at 700 ºC. The Pt films were deposited over oxidized silicon, using Ti or Zr buffer layers. The resistance dependence on temperature was studied by applying increasing currents (up to 2A) to the Pt films. Changes in the microstructure of the Pt films account for the changes in the temperature coefficient of resistance as a function of the deposition parameters. The maximum substrate temperature (675 ºC) was obtained when using 200 nm Pt films deposited at 700 ºC over Ti, with a power consumption of only 16 W

Influence of hydrothermal synthesis conditions and device configuration on the photoresponse of UV sensors based on ZnO nanorods

Zinc oxide nanorods in the form of powder or nanostructured films were synthesized by the hydrothermal method using aqueous solutions. Once the synthesis time was completed, the reaction vessel was naturally cooled or submitted to a quenching process. X-ray diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy techniques were employed to characterize the crystallinity, morphology and dimensions of the nanorods as well as their growth direction. Suspensions of powder material were spin-coated over oxidized silicon substrates in order to obtain nanostructured layers. Photodetectors based on in-situ grown and spin-coated films were prepared in order to evaluate the influences of cooling rate and device configuration on the UV sensing characteristics. Spincoated layers showed an excellent performance (current change by more than four orders of magnitude), better than nanorods grown directly on the substrate during the hydrothermal process. For both configurations, the sensitive layers built from quenched samples exhibited enhanced UV photoresponses when compared to the naturally cooled ones.Fil: Savu, Raluca. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Parra, Rodrigo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Jancar, Bostjan. Jozef Stefan Institute; EsloveniaFil: Zaghete, María Aparecida. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Joanni, Ednan. Centro de Tecnologia da Informação Renato Archer; Brasi

Nanoscale effects and polaronic relaxation in CaCu3Ti 4O12 compounds

In the present communication, by using dielectric spectroscopy measurement, the correlations between Nanosized Barrier Layer Capacitance (NBLC) (Bueno et al. (2009) [7]) and the high frequency polaronic near-Debye dipolar relaxation found in CaCu3Ti4O12 compounds was discussed. The polaronic process was confirmed to be closely associated with the ultrahigh dielectric features of CaCu3Ti4O12 materials and its concomitant dielectric loss. Herein, the shift in relaxation frequency as a function of temperature was used for calculating the activation energy for hopping electronic conduction. The value obtained was 33 meV, an energy whose magnitude is compatible and confirmed the hypothesis of polaronic features for this high frequency dipolar relaxation process. Furthermore, it is shown that the nanosized barrier inferred from the NBLC model has a polaronic feature with dielectric permittivity exiting orthogonally to dielectric loss, a phenomenological pattern that contradicts the normally observed behavior for traditional dielectrics but explain the dielectric and conductivity feature of CaCu3Ti4O12 compounds. © 2010 Elsevier Ltd. All rights reserved