Roadmap to Gigahertz Organic Transistors

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Guide to state-of-the-art electron devices

Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IEEE Electron Devices Committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device SocietyConcise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, cover

Introductory invited paper Status and trends of silicon RF technology

The current research and development activities in silicon radio-frequency (RF) technologies are ®rst reviewed, accompanied by an illustration of the most pronounced shortcomings of conventional silicon technology in the integrability of RF functions at high GHz frequencies. In the discussion on active RF devices mainly CMOS is investigated due to great interest in this mass-production technology. Issues related to the integration of spiral inductors on silicon are addressed, stressing in particular the di culty of RF substrate potential de®nition. Silicon micromachining techniques are highlighted as potential solutions to the integration of RF passives and to reduce substrate losses and cross-talk on silicon. It is explained that micromachining techniques are the best introduced to the silicon mainstrea

PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

In this work, multi-layer PECVD SiNx/SiNx and SiNx/SiOy passivations are developed featuring very high soft breakdown strength and tunable stress properties, which would allow for stress engineering and wafer bow minimization. AlGaN/GaN-on-Si wafers (150 mm) with very low initial bow (<5 μm) are processed in a CMOS compatible manner. The effect of the major processing steps, namely passivation and metal deposition, on the wafer bow is continuously monitored. In this process aimed at power devices, relatively thick passivation is needed (1.5 μm), which would induce very high stresses on the wafer if a single-layer deposition is applied. Hence, deposition of multiple layers is explored through mechanical modelling and simulation, leading to a stress-free passivation. The optimized multi-layer dielectric consists of two different SiNx single layers (referred to as T40 and R100), which have opposite stress properties, with T40 being tensile and R100 being compressive. By adjusting the thickness ratio of both layers and the number of total layers, mechanical stress within the multi-layer can be neutralized to achieve stress-free deposition. In addition, the optimization of the film properties includes the electrical properties of the passivation, and is designed primarily for high voltage applications. The developed SiNx/SiNx passivation has a soft breakdown strength with more than 8 MV/cm, and leakage currents below 1 nA/mm2 up to soft breakdown. After dielectric development, Schottky and MIS device characteristics with SiNx/SiNx multi-layers are characterized in DC and pulse mode measurements. As measurements suggest, the developed passivation is suitable for GaN-on-Si HEMT applications