Experimental Study of Pressure Loss in a 5 × 5–Rod Bundle With the Mixing Vane Spacer Grid

Axial and lateral pressure loss in a 5 × 5 rod–bundle with a split-type mixing vane spacer grid was experimentally measured using differential pressure transmitters at different sub-channel Reynolds numbers (Re) and orienting angles. The geometrical parameters of the 5 × 5–rod bundle are as follows: they have the same diameter (D = 9.5 mm) and pitch (p = 12.6 mm) as those of real fuel rods of a typical pressurized water reactor (PWR), with a sub-channel hydraulic diameter (D$_{h}$) of 11.78 mm. The characteristics and resistance models of pressure loss are discussed. The main axial pressure loss is caused by the spacer grid, and the spacer grid generates additional wall friction pressure loss downstream of the spacer grid. The lateral pressure loss shows strong correlations with orienting angles and distance from the spacer grid. The lateral pressure loss shows a sudden burst in the mixing vanes region and a slight augmentation at z = 3D$_{h}$. After 3D$_{h}$, the lateral pressure loss decays in an exponential way with distance from the spacer grid, and it becomes constant quickly at z = 20D$_{h}$

CFD Application to Hydrogen Risk Analysis and PAR Qualification

A three dimensional computation fluid dynamics (CFD) code, GASFLOW, is applied to analyze the hydrogen risk for Qinshan-II nuclear power plant (NPP). In this paper, the effect of spray modes on hydrogen risk in the containment during a large break loss of coolant accident (LBLOCA) is analyzed by selecting three different spray strategies, that is, without spray, with direct spray and with both direct and recirculation spray. A strong effect of spray modes on hydrogen distribution is observed. However, the efficiency of the passive auto-catalytic recombiners (PAR) is not substantially affected by spray modes. The hydrogen risk is significantly increased by the direct spray, while the recirculation spray has minor effect on it. In order to simulate more precisely the processes involved in the PAR operation, a new PAR model is developed using CFD approach. The validation shows that the results obtained by the model agree well with the experimental results

Experimental investigation on flow field around a flapping plate with single degree of freedom

Undesirable flapping motion of discs can cause the failure of swing check valves in nuclear passive safety systems. Time-resolved particle image velocimetry (PIV) was employed to investigate the flow characteristics around a free-to-rotate plate and the motion response, with the Reynolds numbers, based on the hydraulic diameter of the channel, from 1.32 × 104 to 3.95 × 104. Appreciable flapping motion (±3.52°) appeared at the Reynolds number of 2.6 × 104 with the frequency of 5.08 Hz. In the low-Reynolds-number case, the plate showed negligible flapping. In the high-Reynolds-number case, the deflection angle increased with reduced flapping amplitude. The torque from the fluid determined the flapping amplitude. In the low-Reynolds-number case, Karman vortices were absent. With increasing Reynolds numbers, Karman vortices developed behind the plate with larger deflection angles. Strong interaction between the wake flow from the leading and trailing edge of the plate was observed. Based on power spectrum density (PSD) analysis, the vortex shedding frequency coincided with the flapping frequency, and the amplitude was positively correlated to the strength of the vortices. Proper orthogonal decomposition (POD) modes evince that, in the case of appreciable motion, coherent structures exhibited a larger spatial scale, enhancing the magnitude of the external torque on the plate

Characteristics of HfLaON/SiO 2 Gate Stack prepared using Reactive Sputtering

HfLaON is one of the most promising high-k dielectrics because of its higher crystallization temperature and ability to tune the work function of the metal gates from Si midgap to around 4eV, meeting the requirement of nMOSFETs. In this paper, HfLaON was prepared using reactive sputtering that alternates between Hf and HfLa targets in N 2 /Ar ambient, followed by a post-deposition anneal. Before deposition of HfLaON film, SiO 2 interfacial layer was grown to improve the interface properties. HfLaON/SiO 2 gate stack exhibited good physical and electrical characteristics, including good thermal stability, excellent interface properties, small equivalent oxide thickness and low gate-leakage current. Further studies found that the excellent characteristics of the gate stack have close relation to the grown method of SiO 2 interfacial layer. In order to investigate their relationship, the different grown methods of SiO 2 interfacial layer were adopted and compared in the fabrication of HfLaON/SiO 2 gate stacks, such as oxidation in O 3 /H 2 O solution, rapid thermal anneal in N 2 or N 2 /O 2 mixed gas

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices in the three-dimensional direction has excellent potential for scaling. However, existing vertical devices face two technical challenges: “self-alignment of gate and channel” and “precise gate length control”. A recrystallization-based vertical C-shaped-channel nanosheet field effect transistor (RC-VCNFET) was proposed, and related process modules were developed. The vertical nanosheet with an “exposed top” structure was successfully fabricated. Moreover, through physical characterization methods such as scanning electron microscopy (SEM), atomic force microscopy (AFM), conductive atomic force microscopy (C-AFM) and transmission electron microscopy (TEM), the influencing factors of the crystal structure of the vertical nanosheet were analyzed. This lays the foundation for fabricating high-performance and low-cost RC-VCNFETs devices in the future