Multicast broadcast services support in OFDMA-based WiMAX systems [Advances in mobile multimedia]

Multimedia stream service provided by broadband wireless networks has emerged as an important technology and has attracted much attention. An all-IP network architecture with reliable high-throughput air interface makes orthogonal frequency division multiplexing access (OFDMA)-based mobile worldwide interoperability for microwave access (mobile WiMAX) a viable technology for wireless multimedia services, such as voice over IP (VoIP), mobile TV, and so on. One of the main features in a WiMAX MAC layer is that it can provide'differentiated services among different traffic categories with individual QoS requirements. In this article, we first give an overview of the key aspects of WiMAX and describe multimedia broadcast multicast service (MBMS) architecture of the 3GPP. Then, we propose a multicast and broadcast service (MBS) architecture for WiMAX that is based on MBMS. Moreover, we enhance the MBS architecture for mobile WiMAX to overcome the shortcoming of limited video broadcast performance over the baseline MBS model. We also give examples to demonstrate that the proposed architecture can support better mobility and offer higher power efficiency

Two novel nonlinear companding schemes with iterative receiver to reduce PAPR in multi-carrier modulation systems

Companding transform is an efficient and simple method to reduce the Peak-to-Average Power Ratio (PAPR) for Multi-Carrier Modulation (MCM) systems. But if the MCM signal is only simply operated by inverse companding transform at the receiver, the resultant spectrum may exhibit severe in-band and out-of-band radiation of the distortion components, and considerable peak regrowth by excessive channel noises etc. In order to prevent these problems from occurring, in this paper, two novel nonlinear companding schemes with a iterative receiver are proposed to reduce the PAPR. By transforming the amplitude or power of the original MCM signals into uniform distributed signals, the novel schemes can effectively reduce PAPR for different modulation formats and sub-carrier sizes. Despite moderate complexity increasing at the receiver, but it is especially suitable to be combined with iterative channel estimation. Computer simulation results show that the proposed schemes can offer good system performances without any bandwidth expansion

Fabrication and Characterization of Electrostatic Quantum Dots in a Si/SiGe 2D Electron Gas, Including an Integrated Read-out Channel

A new fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon-germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represent a step towards the spin-based quantum bit in Si/SiGe heterostructures.Comment: 3 pages, 4 fig

Phase stability and the arsenic vacancy defect in In_xGa_1-xAs

The introduction of defects, such as vacancies, into InxGa1-xAs can have a dramatic impact on the physical and electronic properties of the material. Here we employ ab initio simulations of quasirandom supercells to investigate the structure of InxGa1-xAs and then examine the energy and volume changes associated with the introduction of an arsenic vacancy defect. We predict that both defect energies and volumes for intermediate compositions of InxGa1-xAs differ significantly from what would be expected by assuming a simple linear interpolation of the end member defect energies/volumes

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb, electron-hole exchange (the Bir-Aronov-Pikus mechanism) and the $s$-$d$ exchange scatterings, are explicitly included. The Elliot-Yafet mechanism is also incorporated. From this approach, we study the spin relaxation in both $n$-type and $p$-type Ga(Mn)As quantum wells. For $n$-type Ga(Mn)As quantum wells where most Mn ions take the interstitial positions, we find that the spin relaxation is always dominated by the DP mechanism in metallic region. Interestingly, the Mn concentration dependence of the spin relaxation time is nonmonotonic and exhibits a peak. This behavior is because that the momentum scattering and the inhomogeneous broadening have different density dependences in the non-degenerate and degenerate regimes. For $p$-type Ga(Mn)As quantum wells, we find that Mn concentration dependence of the spin relaxation time is also nonmonotonic and shows a peak. Differently, this behavior is because that the $s$-$d$ exchange scattering (or the Bir-Aronov-Pikus) mechanism dominates the spin relaxation in the high Mn concentration regime at low (or high) temperature, whereas the DP mechanism determines the spin relaxation in the low Mn concentration regime. The Elliot-Yafet mechanism also contributes the spin relaxation at intermediate temperature. The spin relaxation time due to the DP mechanism increases with Mn concentration due to motional narrowing, whereas those due to the spin-flip mechanisms decrease with Mn concentration, which thus leads to the formation of the peak.... (The remaining is omitted due to the space limit)Comment: 12 pages, 8 figures, Phys. Rev. B 79, 2009, in pres

Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer.Comment: 3 pages, 3 figure

Current-driven vortex dynamics in untwinned superconducting single crystals

Current-driven vortex dynamics of type-II superconductors in the weak-pinning limit is investigated by quantitatively studying the current-dependent vortex dissipation of an untwinned YBa2Cu3O7 single crystal. For applied current densities (J) substantially larger than the critical current density (Jc), non-linear resistive peaks appear below the thermodynamic first-order vortex-lattice melting transition temperature (Tm), in contrast to the resistive hysteresis in the low-current limit (J < Jc). These resistive peaks are quantitatively analysed in terms of the current-driven coherent and plastic motion of vortex bundles in the vortex-solid phase, and the non-linear current - voltage characteristics are found to be consistent with the collective flux-creep model. The effects of high-density random point defects on the vortex dynamics are also investigated via proton irradiation of the same single crystal. Neither resistive hysteresis at low currents nor peak effects at high currents are found after the irradiation. Furthermore, the current-voltage characteristics within the instrumental resolution become completely ohmic over a wide range of currents and temperatures, despite theoretical predictions of much larger Jc-values for the given experimental variables. This finding suggests that the vortex-glass phase, a theoretically proposed low-temperature vortex state which is stabilized by point disorder and has a vanishing resistivity, may become unstable under applied currents significantly smaller than the theoretically predicted Jc. More investigation appears necessary in order to resolve this puzzling issue