Gallium arsenide quantum well-based far infrared array radiometric imager

We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost

GaAs QWIP Array Containing More Than a Million Pixels

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras

Cryogenic Detector Technology for Space Science Application

We review the current status of detector development at NASA's Goddard Space Flight Center and address future prospect for space science application. In particular, the IR detector capability and applicability to second generation SOFIA instrument will be discussed. We will examine areas such as 3-dimensional hybridization of large format bolometer arrays to readout multiplexers; advanced light coupling scheme for planar ortho-mode transducer circuitry; integration of high density readout wiring for low temperature detector arrays; and microwave multiplexers for large format superconducting detector arrays

Silicon Wafer-Scale Substrate for Microshutters and Detector Arrays

The silicon substrate carrier was created so that a large-area array (in this case 62,000+ elements of a microshutter array) and a variety of discrete passive and active devices could be mounted on a single board, similar to a printed circuit board. However, the density and number of interconnects far exceeds the capabilities of printed circuit board technology. To overcome this hurdle, a method was developed to fabricate this carrier out of silicon and implement silicon integrated circuit (IC) technology. This method achieves a large number of high-density metal interconnects; a 100-percent yield over a 6-in. (approximately equal to 15-cm) diameter wafer (one unit per wafer); a rigid, thermally compatible structure (all components and operating conditions) to cryogenic temperatures; re-workability and component replaceability, if required; and the ability to precisely cut large-area holes through the substrate. A method that would employ indium bump technology along with wafer-scale integration onto a silicon carrier was also developed. By establishing a silicon-based version of a printed circuit board, the objectives could be met with one solution. The silicon substrate would be 2 mm thick to survive the environmental loads of a launch. More than 2,300 metal traces and over 1,500 individual wire bonds are required. To mate the microshutter array to the silicon substrate, more than 10,000 indium bumps are required. A window was cut in the substrate to allow the light signal to pass through the substrate and reach the microshutter array. The substrate was also the receptacle for multiple unpackaged IC die wire-bonded directly to the substrate (thus conserving space over conventionally packaged die). Unique features of this technology include the implementation of a 2-mmthick silicon wafer to withstand extreme mechanical loads (from a rocket launch); integrated polysilicon resistor heaters directly on the substrate; the precise formation of an open aperture (approximately equal to 3x3cm) without any crack propagation; implementation of IR transmission blocking techniques; and compatibility with indium bump bonding. Although designed for the microshutter arrays for the NIRSpec instrument on the James Webb Space Telescope, these substrates can be linked to microshutter applications in the photomask generation and stepper equipment used to make ICs and microelectromechanical system (MEMS) devices

Spectral Analysis of the Primary Flight Focal Plane Arrays for the Thermal Infrared Sensor

Thermal Infrared Sensor (TIRS) is a (1) New longwave infrared (10 - 12 micron) sensor for the Landsat Data Continuity Mission, (2) 185 km ground swath; 100 meter pixel size on ground, (3) Pushbroom sensor configuration. Issue of Calibration are: (1) Single detector -- only one calibration, (2) Multiple detectors - unique calibration for each detector -- leads to pixel-to-pixel artifacts. Objectives are: (1) Predict extent of residual striping when viewing a uniform blackbody target through various atmospheres, (2) Determine how different spectral shapes affect the derived surface temperature in a realistic synthetic scene

A new high-speed IR camera system

A multi-organizational team at the Goddard Space Flight Center is developing a new far infrared (FIR) camera system which furthers the state of the art for this type of instrument by the incorporating recent advances in several technological disciplines. All aspects of the camera system are optimized for operation at the high data rates required for astronomical observations in the far infrared. The instrument is built around a Blocked Impurity Band (BIB) detector array which exhibits responsivity over a broad wavelength band and which is capable of operating at 1000 frames/sec, and consists of a focal plane dewar, a compact camera head electronics package, and a Digital Signal Processor (DSP)-based data system residing in a standard 486 personal computer. In this paper we discuss the overall system architecture, the focal plane dewar, and advanced features and design considerations for the electronics. This system, or one derived from it, may prove useful for many commercial and/or industrial infrared imaging or spectroscopic applications, including thermal machine vision for robotic manufacturing, photographic observation of short-duration thermal events such as combustion or chemical reactions, and high-resolution surveillance imaging

SHARC II: a Caltech Submillimeter Observatory facility camera with 384 pixels

SHARC II is a background-limited 350 μm and 450 μm facility camera for the Caltech Submillimeter Observatory undergoing commissioning in 2002. The key component of SHARC II is a 12×32 array of doped silicon 'pop-up' bolometers developed at NASA/Goddard. Each 1 mm × 1 mm pixel is coated with a 400 Ω/square bismuth film and located λ/4 above a reflective backshort to achieve >75% absorption efficiency. The pixels cover the focal plane with >90% filling factor. At 350 μm, the SHARC II pixels are separated by 0.65 λ/D. In contrast to the silicon bolometers in the predecessor of SHARC II, each doped thermistor occupies nearly the full area of the pixel, which lowers the 1/f knee of the detector noise to <0.03 Hz, under load, at the bath temperature of 0.36 K. The bolometers are AC-biased and read in 'total power' mode to take advantage of the improved stability. Each bolometer is biased through a custom ~130 MΩ CrSi load resistor at 7 K and read with a commercial JFET at 120 K. The JFETs and load resistors are integrated with the detectors into a single assembly to minimize microphonic noise. Electrical connection across the 0.36 K to 4 K and 4 K to 120 K temperature interfaces is accomplished with lithographed metal wires on dielectric substrates. In the best 25% of winter nights on Mauna Kea, SHARC II is expected to have an NEFD at 350 μm of 1 Jy Hz-1/2 or better. The new camera should be at least 4 times faster at detecting known point sources and 30 times faster at mapping large areas compared to the prior instrument