Strategies for ultrahigh outputs generation in triboelectric energy harvesting technologies: from fundamentals to devices

Since 2012, a triboelectric nanogenerator (TENG) has provided new possibilities to convert tiny and effective mechanical energies into electrical energies by the physical contact of two objects. Over the past few years, with the advancement of materials' synthesis and device technologies, the TENGs generated a high instantaneous output power of several mW/cm(2), required to drive various self-powered systems. However, TENGs may suffer from intrinsic and practical limitations such as air breakdown that affect the further increase of the outputs. This article provides a comprehensive review of high-output TENGs from fundamental issues through materials to devices. Finally, we show some strategies for fabricating high-output TENGs

Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN

The effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN was discussed. The effect was studied using cross-sectional transmission electron microscopy (TEM). It was shown that the higher-temperature annealing reduced the ferromagnetic signal and produced antiferromagnetic Mn-nitride nanoclusters.open161

Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma

Ferromagnetic properties of (Ga,Mn)N nanowires were examined by treating with nitrogen plasma at 200 ??C. Nanowires grown by chemical vapor deposition were n-type and no secondary phases were found. The magnetic moment increased and was maintained at room temperature by this treatment. Synchrotron radiation photoemission spectroscopy revealed that Ga vacancies significantly increased, but N vacancies decreased by plasma treatment, leading to a decrease of MnGa-VN complex and the enhancement of Mn activation.open111

Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 ??C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.open586

Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases.open293

The Progress of PVDF as a Functional Material for Triboelectric Nanogenerators and Self-Powered Sensors

Ever since a new energy harvesting technology, known as a triboelectric nanogenerator (TENG), was reported in 2012, the rapid development of device fabrication techniques and mechanical system designs have considerably made the instantaneous output power increase up to several tens of mW/cm(2). With this innovative technology, a lot of researchers experimentally demonstrated that various portable/wearable devices could be operated without any external power. This article provides a comprehensive review of polyvinylidene fluoride (PVDF)-based polymers as effective dielectrics in TENGs for further increase of the output power to speed up commercialization of the TENGs, as well as the fundamental issues regarding the materials. In the end, we will also review PVDF-based sensors based on the triboelectric and piezoelectric effects of the PVDF polymers

Microstructural, optical, and magnetic properties of Mn-implanted p-type GaN

The microstructural, optical and magnetic properties of Mn-implanted p-type GaN were investigated. Dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequently annealing. The Ga-Mn magnetic phases contributing to the ferromagnetic property were produced after annealing Mn-implanted p-type GaN below 800??C.open151

Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams

Rapid thermal annealing of VO2 nanobeams in an ambient argon environment has been carried out at various temperatures after device fabrication. Our analysis revealed that increasing the annealing temperature from 200??C to 400??C results in the reduction of both ohmic and nanobeam resistances with an appreciable decrease in joule-heating based transition voltage and transition temperature, while samples annealed at 500??C exhibited a conducting rutile-phase like characteristics at room temperature. In addition, these variation trends were explored using a physical model and the results were found to be in agreement with the observed results, thus verifying the model.open2

Development of a Novel Gas-Sensing Platform Based on a Network of Metal Oxide Nanowire Junctions Formed on a Suspended Carbon Nanomesh Backbone

Junction networks made of longitudinally connected metal oxide nanowires (MOx NWs) have been widely utilized in resistive-type gas sensors because the potential barrier at the NW junctions leads to improved gas sensing performances. However, conventional MOx-NW-based gas sensors exhibit limited gas access to the sensing sites and reduced utilization of the entire NW surfaces because the NW networks are grown on the substrate. This study presents a novel gas sensor platform facilitating the formation of ZnO NW junction networks in a suspended architecture by growing ZnO NWs radially on a suspended carbon mesh backbone consisting of sub-micrometer-sized wires. NW networks were densely formed in the lateral and longitudinal directions of the ZnO NWs, forming additional longitudinally connected junctions in the voids of the carbon mesh. Therefore, target gases could efficiently access the sensing sites, including the junctions and the entire surface of the ZnO NWs. Thus, the present sensor, based on a suspended network of longitudinally connected NW junctions, exhibited enhanced gas response, sensitivity, and lower limit of detection compared to sensors consisting of only laterally connected NWs. In addition, complete sensor structures consisting of a suspended carbon mesh backbone and ZnO NWs could be prepared using only batch fabrication processes such as carbon microelectromechanical systems and hydrothermal synthesis, allowing cost-effective sensor fabrication

Growth direction determination of a single RuO2 nanowire by polarized Raman spectroscopy

The dependence of band intensities in the Raman spectrum of individual single-crystal ruthenium dioxide (RuO2) nanowires on the angle between the plane of polarization of the exciting (and collected) light and the long axis of the nanowire, is shown to be a simple, complementary technique to high resolution transmission electron microscopy (HRTEM) for determining nanowire growth direction. We show that excellent agreement exists between what is observed and what is predicted for the polarization angle dependence of the intensities of the nanowires' E-g (525 cm(-1)) and the B-2g (714 cm(-1)) Raman bands, only by assuming that the nanowires grow along the (001) crystallographic direction, as confirmed by HRTEM.open9