Strain Effect in Epitaxial Oxide Heterostructures

In recent decades, extensive studies have been conducted on controlling and engineering novel functionalities in transition metal oxide (TMO) heterostructures by epitaxial strain. In this chapter, we discuss popular transition metal oxide thin films in the context of various research fields that are extensively studied in condensed matter physics. These materials include La1.85Sr0.15CuO4 (a high temperature superconductor), SrRuO3 (a highly conductive ferromagnetic metal), La0.67Sr0.33MnO3 (a colossal magnetoresistive ferromagnetic metal), BiFeO3 (a multiferroic oxide), LaAlO3-SrTiO3 (a conductive oxide interface), and LaNiO3 (a strongly correlated metal). We focus on the appearance of novel functional properties from imposing epitaxial strain (compressive or tensile strain caused by the use of various lattice-mismatched substrates) on these films that cannot be observed in their bulk form. Subsequently, the intrinsic mechanisms for these novel phenomena are discussed based on experimental observations and theoretical modelling. We conclude that by using epitaxial strain, not only can thin film functionalities be tuned but many novel correlated phenomena can also be created. We believe that our collective efforts on the strain engineering of various transition metal oxide thin films will provide an insightful description of this emerging subject from a fundamental physics and nanoscale device applications point of view

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 {\deg}C. At the lowest growth temperature, the out-of-plane strain raises to 1.5%, which is five times bigger than that in a NiO film grown at 750 {\deg}C. MnO thin films that had long-range ordered were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by substrate temperature and laser fluence. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low growth temperature prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research

Reusable, polyethylene glycol-structured microfluidic channel for particle immunoassays

A microfluidic channel made entirely out of polyethylene glycol (PEG), not PEG coating to silicon or polydimethylsiloxane (PDMS) surface, was fabricated and tested for its reusability in particle immunoassays and passive protein fouling, at relatively high target concentrations (1 mg ml-1). The PEG devices were reusable up to ten times while the oxygen-plasma-treated polydimethyl siloxane (PDMS) device could be reused up to four times and plain PDMS were not reusable. Liquid was delivered spontaneously via capillary action and complicated bonding procedure was not necessary. The contact angle analysis revealed that the water contact angle on microchannel surface should be lower than ~60°, which are comparable to those on dried protein films, to be reusable for particle immunoassays and passive protein fouling

Electron counting of single-electron tunneling current

Single-electron tunneling through a quantum dot is detected by means of a radio-frequency single-electron transistor.. Poisson statistics of single-electron-tunneling events are observed from frequency domain measurements, and individual tunneling events are detected in the time-domain measurements. Counting tunneling events gives an accurate current measurement in the saturated current regime, where electrons tunnel into the dot only from one electrode and tunnel out of the dot only to the other electrode. (C) 2004 American Institute of Physics.X119698sciescopu