IS-16 Innovation on Microfluidics-based Device for Single Cell Analysis, A Canine Cutaneous Mast Cell Tumor Model

Recently, our laboratory, Companion Animal Cancer Research Unit, CAC-RU is interested in cancer stem cell (CSC) analysis both at the single cell and the tissue-based levels. However, cellular heterogeneity is still the major hassle for our comprehension in CSC biology. Therefore, to overcome and eradicate this big obstacles, a single cell analysis method must be established. Our laboratory has finally setup and integrated the microfluidics-based single cell analysis into our CSC researches under the association with Department of Mechanical Engineering, Faculty of Engineering, Chulalongkorn University and Thai Micro-electronic Centre, NECTEC, Ministry of Science and Technology, Thailand and Faculty of Medical Technic, Mahidol University since 2013 till present

RFCV test structure design for a selected frequency range

The problems with the CV characterization on very leaky (thin) nitrided oxide are mainly due to the measurement precision and MOS gate dielectric model accuracy. By doing S-parameter measurement at RF frequency and using simple but reasonably accurate model. we can obtain proper CV curves for very thin nitrided gate dielectrics. Regarding the measurement frequency we propose a systematic method to find a frequency range in which we can select measurement frequencies for all biases to obtain a full CV curve. Moreover, we formulated the first order relationship between the measurement frequency range and the test structure design for CV characterization. With the established formulae, we redesigned the test structures and verified that the formulae can be used as a guideline for the test structure design for RFCV measurements

Silicon microchannel frames for high-energy physics experiments

The design of detectors used for experiments in high-energy physics requires a light, stiff, and efficient cooling system with a low material budget. The use of silicon microchannel cooling plates has gained considerable interest in the last decade. In this study, we propose the development of silicon microchannel cooling frames studied within the framework of the major upgrade of the Inner Tracking System (ITS) of the ALICE experiment at CERN. The preliminary results obtained with these frames demonstrate that they can withstand the internal pressure arising from the flow of the coolant with a limited mass penalt

Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF performance as given by the cut-off and maximum oscillation frequency is given as a function of input power. The evaluation highlights the current immaturity of the Si:SiGe technologies, where an average HFET shows a maximum transconductance of ∼300 mS/mm and cut-off frequency ∼60 GHz, while the new generation Si nMOS is reaching 1300 mS/mm and 120 GHz respectively. The comparison shows that the strength of the HFETs lies in low power operation (<200 μW). © 2004 Elsevier Ltd. All rights reserved

Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF performance as given by the cut-off and maximum oscillation frequency is given as a function of input power. The evaluation highlights the current immaturity of the Si:SiGe technologies, where an average HFET shows a maximum transconductance of ∼300 mS/mm and cut-off frequency ∼60 GHz, while the new generation Si nMOS is reaching 1300 mS/mm and 120 GHz respectively. The comparison shows that the strength of the HFETs lies in low power operation (<200 μW). © 2004 Elsevier Ltd. All rights reserved

Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors

Wafer-level packaging (WLP) technology offers novel opportunities for the realization of high-quality on-chip passives needed in RF front-ends. This paper demonstrates a thin-film WLP technology on top of a 90-nm RF CMOS process with one 15-GHz and two low-power 5-GHz voltage-controlled oscillators (VCOs) using a high-quality WLP or above-IC inductor. The 5-GHz VCOs have a power consumption of 0.33 mW and a phase noise of - 115 dBc/Hz and -111 dBc/Hz; at 1-MHz offset, respectively, and the 15-GHz VCO has a phase noise of -105 dBc/Hz at 1-MHz offset with a power consumption of 2.76 mW