Effect of gallium doping on the characteristic properties of polycrystalline cadmium telluride thin film

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide (FTO) substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2⸱4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using X-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe . Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this pape

Investigating the effect of GaCl3 incorporation into the usual CdCl2 treatment on CdTe-based solar cell device structures

The incorporation of GaCl3 into the usual CdCl2 post-deposition treatment solution of CdTe-based solar cells has been investigated. Both CdS and CdTe layers used in this work were prepared by electroplating technique and they are n-type in electrical conduction as observed from photoelectrochemical cell measurement technique. Before applying the chemical treatments to the device structures, the effect of GaCl3 incorporation into the usual CdCl2 treatment was first studied on the structural and optical properties of CdTe thin films. The results of the optical properties show that the bandgap of CdTe thin films treated with a mixture of GaCl3 + CdCl2 is closer to that of bulk CdTe layers than the ones treated only with CdCl2 solution. The structural properties also showed that CdTe thin films treated with GaCl3 + CdCl2 is more crystalline than CdTe thin films treated only with CdCl2 solution. The addition of GaCl3 into the CdCl2 solution have been seen to drastically enhance the solar-to-electric conversion efficiency of CdS/CdTe based solar cells. One of the effects of Ga incorporation into the usual CdCl2 treatment was seen in the series resistance reduction which ultimately leads to enhancement in the observed short-circuit current density, fill factor and overall solar cell efficiency. For the glass/FTO/n-CdS/n-CdTe device structures, the cell efficiencies were observed in the range 1.9–2.1% after being treated with CdCl2 solution only. When treated with CdCl2 + GaCl3, the efficiency increased to 6.1–6.4%. Subsequent study on multi-junction graded bandgap solar cells using the GaCl3 + CdCl2 chemical solution for the surface treatment of glass/FTO/n-ZnS/n-CdS/n-CdTe device structures results in solar cell efficiency >10%

Improvement of composition of CdTe thin films during heat treatment in the presence of CdCl2

CdCl2 treatment is a crucial step in development of CdS/CdTe solar cells. Although this rocessing step has been used over a period of three decades, full understanding is not yet achieved. This paper reports the experimental evidence for improvement of composition of CdTe layers during CdCl2 treatment. This investigation makes use of four selected analytical techniques; Photo-electro-chemical (PEC) cell, X-ray diffraction (XRD), Raman spectroscopy and Scanning electron microscopy (SEM). CdTe layers used were electroplated using three Cd precursors; CdSO4, Cd(NO3)2 and CdCl2. Results show the improvement of stoichiometry of CdTe layers during CdCl2 treatment through chemical reaction between Cd from CdCl2 and elemental Te that usually precipitate during CdTe growth, due to its natural behaviour. XRD and SEM results show that the low-temperature (~85ºC) electroplated CdTe layers consist of ~(20-60) nm size crystallites, but after CdCl2 treatment, the layers show drastic recrystallisation with grains becoming a few microns in size. These CdCl2 treated layers are then comparable to high temperature grown CdTe layers by the size of grains