10 to 50 nm Long Quasi Ballistic Carbon Nanotube Devices Obtained Without Complex Lithography

A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths L~10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths ~ 10 nm, near the mean free path (mfp) of lop~15 nm for optical phonon scattering, exhibit near-ballistic transport at high biases and can carry unprecedented 100 mA currents per tube. Semiconducting SWCNT field-effect transistors (FETs) with ~ 50 nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs.Comment: PNAS, in pres

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC characteristics of carbon nanotube field effect transistor (CNTFET). In this work, we present results of Monte Carlo simulation of a coaxially gated CNTFET including electron-phonon scattering. Our purpose is to present the intrinsic transport properties of such material through the evaluation of electron mean-free-path. To highlight the potential of high performance level of CNTFET, we then perform a study of DC characteristics and of the impact of capacitive effects. Finally, we compare the performance of CNTFET with that of Si nanowire MOSFET.Comment: 15 pages, 14 figures, final version to be published in C. R. Acad. Sci. Pari

Mechanism of Ambipolar Field-Effect Carrier Injections in One-Dimensional Mott Insulators

To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. To take account of the formation of Schottky barriers, we add scalar and vector potentials, which satisfy the Poisson equation with boundary values depending on the drain voltage, the gate bias, and the work-function difference. The current-voltage characteristics are obtained by solving the time-dependent Schr\"odinger equation in the unrestricted Hartree-Fock approximation. Its validity is discussed with the help of the Lanczos method applied to small systems. We find generally ambipolar carrier injections in Mott insulators even if the work function of the crystal is quite different from that of the electrodes. They result from balancing the correlation effect with the barrier effect. For the gate-bias polarity with higher Schottky barriers, the correlation effect is weakened accordingly, owing to collective transport in the one-dimensional correlated electron systems.Comment: 21 pages, 10 figures, to appear in J. Phys. Soc. Jp

Ground-state energy of the electron liquid in ultrathin wires

The ground-state energy and the density correlation function of the electron liquid in a thin one-dimensional wire are computed. The calculation is based on an approximate mapping of the problem with a realistic Coulomb interaction law onto exactly solvable models of mathematical physics. This approach becomes asymptotically exact in the limit of small wire radius but remains numerically accurate even for modestly thin wires.Comment: (v3) Replaced with the published version. 4 pages, 1 figur

Development of a Compact Neutron Source based on Field Ionization Processes

The authors report on the use of carbon nanofiber nanoemitters to ionize deuterium atoms for the generation of neutrons in a deuterium-deuterium reaction in a preloaded target. Acceleration voltages in the range of 50-80 kV are used. Field emission of electrons is investigated to characterize the emitters. The experimental setup and sample preparation are described and first data of neutron production are presented. Ongoing experiments to increase neutron production yields by optimizing the field emitter geometry and surface conditions are discussed.Comment: 4 pages, 5 figures; IVNC 201