16 research outputs found

    Buffer influence on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

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    We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of buffer/FeCoB/MgO/FeCoB/Ta/Ru multilayers for three different buffers: Ta 5 / Ru 10 / Ta 3, Ta 5 / Ru 10 / Ta 10 and Ta 5 / Ru 20 / Ta 5 (all thicknesses in nm). In addition, we study systems with a single FeCoB layer deposited above as well as below the MgO barrier. The crystallographic texture and the roughness of the buffers are determined by means of XRD and atomic force microscopy measurements. Furthermore, we examine the magnetic domain pattern, the magnetic dead layer thickness and the perpendicular magnetic anisotropy fields for each sample. Finally, we investigate the effect of the current induced magnetization switching for nanopillar junctions with lateral dimensions ranging from 1 {\mu}m down to 140 nm. Buffer Ta 5 / Ru 10 / Ta 3, which has the thickest dead layer, exhibits a large increase in the thermal stability factor while featuring a slightly lower critical current density value when compared to the buffer with the thinnest dead layer Ta 5 / Ru 20 / Ta 5

    Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in Wide Range of Heavy Metal Thickness

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    The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet nanostructures, required for applications in the emergent magnetic technologies like random access memories, high-frequency nano oscillators, or bio-inspired neuromorphic computations. We study the interface properties, magnetization dynamics, magnetostatic features and spin-orbit interactions within the multilayer system Ti(2)/Co(1)/Pt(0-4)/Co(1)/MgO(2)/Ti(2) (thicknesses in nanometers) patterned by optical lithography on micrometer-sized bars. In the investigated devices, Pt is used as a source of the spin current and as a non-magnetic spacer with variable thickness, which enables the magnitude of the interlayer ferromagnetic exchange coupling to be effectively tuned. We also find the Pt thickness-dependent changes in magnetic anisotropies, magnetoresistance, effective Hall angle and, eventually, spin-orbit torque fields at interfaces. The experimental findings are supported by the relevant interface structure-related simulations, micromagnetic, macrospin, as well as the spin drift-diffusion models. Finally, the contribution of the spin-orbital Edelstein-Rashba interfacial fields is also briefly discussed in the analysis.Comment: 39 pages, 14 figure

    Dyfrakcja rentgenowska na uk艂adach wielowarstwowych : metody pomiaru i modele : praca doktorska /

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    Recenzenci pracy: Grzegorz G艂adyszewski, Wojciech 艁u偶ny.Praca doktorska. Akademia G贸rniczo-Hutnicza im. Stanis艂awa Staszica (Krak贸w), 2006.Bibliogr. k. 114-118.Dyfrakcja rentgenowska na cienkich warstwach, dyfraktometr X鈥橮ert MPD, geometrie pomiar贸w, pomiary w geometrii Bragga-Brentana, wi膮zki r贸wnoleg艂ej, uk艂ady szczelin formuj膮ce wi膮zk臋 pierwotn膮, wt贸rn膮, rodzaje pomiar贸w dyfrakcyjnych w badaniach cienkich warstw, pomiar 0-20, 20, 蠅, figury biegunowe, reflektometria, podstawy teoretyczne dyfrakcji, wytwarzanie pr贸bek, etapy wytwarzania z艂膮cza tunelowego, nanoszenie warstw metod膮 rozpylania jonowego, utlenianie bariery, wygrzewanie, litografia optyczna, wytrawianie jonowe, metody pomiaru w艂asno艣ci magnetycznych, elektrycznych, topografii powierzchni, magnetorezystancji tunelowej, p臋tli magnetycznych, magnetometr Kerra, pomiar topografii powierzchni, mikroskop si艂 atomowych, periodyczne uk艂ady wielowarstwowe typu supersieci, dyfrakcja na periodycznej strukturze wielowarstwowej, modele teoretyczne, analityczny, symulacyjny, na uk艂adzie (Fen/Aun)xN, struktura warstwowa pr贸bek, model uk艂adu periodycznego o nieca艂kowitym zape艂nieniu warstw, por贸wnanie wynik贸w modelu z rzeczywistym uk艂adem Fe/Au, nieperiodycznych uk艂ad贸w wielowarstwowych, struktury wielowarstwowej, obliczanie profilu 0-20, przyk艂adowe symulacje, z艂膮cze tunelowe typu zaw贸r spinowy, zaw贸r spinowy, magnetyczne z艂膮cze tunelowe, sprz臋偶enia magnetyczne w z艂膮czu, pola prze艂膮cze艅, sprz臋偶enie mi臋dzywarstwowe FP-S-FF, kontaktowe AF-FP, wp艂yw warstw buforowych na mikrostruktur臋, w艂asno艣ci z艂膮cz tunelowych, struktura z艂膮cza tunelowego typu zaw贸r spinowy, badanych z艂膮cz, pomiary dyfrakcyjne, symulacja profili 0-20 z艂膮cz tunelowych z r贸偶nymi buforami, wp艂yw tekstury, szorstko艣ci na w艂asno艣ci magnetyczne, elektryczne, magnetorezystancja tunelowa, z艂膮cza tunelowe ze zmienn膮 grubo艣ci膮 warstwy swobodnej, programy napisane w ramach pracy doktorskie

    Surface-Step-Induced Magnetic Anisotropy in Epitaxial LSMO Deposited on Engineered STO Surfaces

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    Changes in stoichiometry, temperature, strain and other parameters dramatically alter properties of LSMO perovskite. Thus, the sensitivity of LSMO may enable control of the magnetic properties of the film. This work demonstrates the capabilities of interface engineering to achieve the desired effects. Three methods of preparing STO substrates were conducted, i.e., using acid, buffer solution, and deionized water. The occurrence of terraces and their morphology depend on the preparation treatment. Terraces propagate on deposited layers and influence LSMO properties. The measurements show that anisotropy depends on the roughness of the substrate, the method of preparing the substrate, and oxygen treatment. The collected results suggest that the dipolar mechanism may be the source of LSMO anisotropy

    Investigation of Dye Dopant Influence on Electrooptical and Morphology Properties of Polymeric Acceptor Matrix Dedicated for Ternary Organic Solar Cells

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    The publication presents the results of investigations of the influence of dye dopant on the electrooptical and morphology properties of a polymeric donor:acceptor mixture. Ternary thin films (polymer:dye:fullerene) were investigated for potential application as an active layer in organic solar cells. The aim of the research is to determine the effect of selected dye materials (dye D131, dye D149, dye D205, dye D358) on the three-component layer and their potential usefulness as an additional donor in ternary cells, based on P3HT donor and PC71BM acceptor. UV–vis spectroscopy studies were performed, and absorption and luminescence spectra were determined. Ellipsometry parameters for single dye and ternary layers have been measured. The analyses were performed using the Raman spectroscopy method, and the Raman spectra of the mixtures and single components have been determined. Organic layers were prepared and studied using scanning electron microscope and atomic force microscope. For dyes, ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy studies were carried out and the ternary system was presented and analyzed in terms of energy bands

    Nitrogen Dioxide Sensing Using Multilayer Structure of Reduced Graphene Oxide and 伪-Fe<sub>2</sub>O<sub>3</sub>

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    Multilayers consisting of graphene oxide (GO) and 伪-Fe2O3 thin layers were deposited on the ceramic substrates by the spray LbL (layer by layer) coating technique. Graphene oxide was prepared from graphite using the modified Hummers method. Obtained GO flakes reached up to 6 nanometers in thickness and 10 micrometers in lateral size. Iron oxide Fe2O3 was obtained by the wet chemical method from FeCl3 and NH4OH solution. Manufactured samples were deposited as 3 LbL (GO and Fe2O3 layers deposited sequentially) and 6 LbL structures with GO as a bottom layer. Electrical measurements show the decrease of multilayer resistance after the introduction of the oxidizing NO2 gas to the ambient air atmosphere. The concentration of NO2 was changed from 1 ppm to 20 ppm. The samples changed their resistance even at temperatures close to room temperature, however, the sensitivity increased with temperature. Fe2O3 is known as an n-type semiconductor, but the rGO/Fe2O3 hybrid structure behaved similarly to rGO, which is p-type. Both chemisorbed O2 and NO2 act as electron traps decreasing the concentration of electrons and increasing the effective multilayer conductivity. An explanation of the observed variations of multilayer structure resistance also the possibility of heterojunctions formation was taken into account
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