108 research outputs found
Artificial Intelligence: Application Today and Implications Tomorrow
This paper analyzes the applications of artificial intelligence to the legal industry, specifically in the fields of legal research and contract drafting. First, it will look at the implications of artificial intelligence (A.I.) for the current practice of law. Second, it will delve into the future implications of A.I. on law firms and the possible regulatory challenges that come with A.I. The proliferation of A.I. in the legal sphere will give laymen (clients) access to the information and services traditionally provided exclusively by attorneys. With an increase in access to these services will come a change in the role that lawyers must play. A.I. is a tool that will increase access to cheaper and more efficient services, but non-lawyers lack the training to analyze and understand information it puts out. The role of lawyers will change to fill this role, namely utilizing these tools to create a better work product with greater efficiency for their clients
Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory
We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane
wave supercell calculations in wurtzite aluminum nitride in order to
characterize the geometry, formation energies, transition levels and hyperfine
tensors of the nitrogen split interstitial defect. The calculated hyperfine
tensors may provide useful fingerprint of this defect for electron paramagnetic
resonance measurement.Comment: 5 pages, 3 figure
Electron effective mass in AlGaN alloys determined by mid-infrared optical Hall effect
The effective electron mass parameter in Si-doped AlGaN is
determined to be from mid-infrared optical Hall
effect measurements. No significant anisotropy of the effective electron mass
parameter is found supporting theoretical predictions. Assuming a linear change
of the effective electron mass with the Al content in AlGaN alloys and
for GaN, an average effective electron mass of
can be extrapolated for AlN. The analysis of mid-infrared
spectroscopic ellipsometry measurements further confirms the two phonon mode
behavior of the E(TO) and one phonon mode behavior of the A(LO) phonon
mode in high-Al-content AlGaN alloys as seen in previous Raman scattering
studies
Input estimation for extended-release formulations exemplified with exenatide
Estimating the in vivo absorption profile of a drug is essential when developing extended-release medications. Such estimates can be obtained by measuring plasma concentrations over time and inferring the absorption from a model of the drug’s pharmacokinetics. Of particular interest is to predict the bioavailability—the fraction of the drug that is absorbed and enters the systemic circulation. This paper presents a framework for addressing this class of estimation problems and gives advice on the choice of method. In parametric methods, a model is constructed for the absorption process, which can be difficult when the absorption has a complicated profile. Here, we place emphasis on non-parametric methods that avoid making strong assumptions about the absorption. A modern estimation method that can address very general input-estimation problems has previously been presented. In this method, the absorption profile is modeled as a stochastic process, which is estimated using Markov chain Monte Carlo techniques. The applicability of this method for extended-release formulation development is evaluated by analyzing a dataset of Bydureon, an injectable extended-release suspension formulation of exenatide, a GLP-1 receptor agonist for treating diabetes. This drug is known to have non-linear pharmacokinetics. Its plasma concentration profile exhibits multiple peaks, something that can make parametric modeling challenging, but poses no major difficulties for non-parametric methods. The method is also validated on synthetic data, exploring the effects of sampling and noise on the accuracy of the estimates
Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
Abstract. Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples
Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers
Clustering of vacancy defects in high-purity semi-insulating SiC
Positron lifetime spectroscopy was used to study native vacancy defects in
semi-insulating silicon carbide. The material is shown to contain (i) vacancy
clusters consisting of 4--5 missing atoms and (ii) Si vacancy related
negatively charged defects. The total open volume bound to the clusters
anticorrelates with the electrical resistivity both in as-grown and annealed
material. Our results suggest that Si vacancy related complexes compensate
electrically the as-grown material, but migrate to increase the size of the
clusters during annealing, leading to loss of resistivity.Comment: 8 pages, 5 figure
Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC
Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2×1018 cm-2. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C3v symmetry with g = 2.004 and a fine-structure parameter D = 436.5×10-4 cm-1. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at ~550°C. The principal z-axis of the D tensor is parallel to the -directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C2v-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7×10-4 cm-1 and E = 56.2×10-4 cm-1. The L6 center disappeared after annealing at a rather low temperature (~200°C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
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