Artificial Intelligence: Application Today and Implications Tomorrow

This paper analyzes the applications of artificial intelligence to the legal industry, specifically in the fields of legal research and contract drafting. First, it will look at the implications of artificial intelligence (A.I.) for the current practice of law. Second, it will delve into the future implications of A.I. on law firms and the possible regulatory challenges that come with A.I. The proliferation of A.I. in the legal sphere will give laymen (clients) access to the information and services traditionally provided exclusively by attorneys. With an increase in access to these services will come a change in the role that lawyers must play. A.I. is a tool that will increase access to cheaper and more efficient services, but non-lawyers lack the training to analyze and understand information it puts out. The role of lawyers will change to fill this role, namely utilizing these tools to create a better work product with greater efficiency for their clients

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.Comment: 5 pages, 3 figure

Electron effective mass in Al0.72_{0.72}Ga0.28_{0.28}N alloys determined by mid-infrared optical Hall effect

The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and $m^\ast=0.232\,m_0$ for GaN, an average effective electron mass of $m^\ast=0.376\,m_0$ can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E$_1$(TO) and one phonon mode behavior of the A$_1$(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies

Input estimation for extended-release formulations exemplified with exenatide

Estimating the in vivo absorption profile of a drug is essential when developing extended-release medications. Such estimates can be obtained by measuring plasma concentrations over time and inferring the absorption from a model of the drug’s pharmacokinetics. Of particular interest is to predict the bioavailability—the fraction of the drug that is absorbed and enters the systemic circulation. This paper presents a framework for addressing this class of estimation problems and gives advice on the choice of method. In parametric methods, a model is constructed for the absorption process, which can be difficult when the absorption has a complicated profile. Here, we place emphasis on non-parametric methods that avoid making strong assumptions about the absorption. A modern estimation method that can address very general input-estimation problems has previously been presented. In this method, the absorption profile is modeled as a stochastic process, which is estimated using Markov chain Monte Carlo techniques. The applicability of this method for extended-release formulation development is evaluated by analyzing a dataset of Bydureon, an injectable extended-release suspension formulation of exenatide, a GLP-1 receptor agonist for treating diabetes. This drug is known to have non-linear pharmacokinetics. Its plasma concentration profile exhibits multiple peaks, something that can make parametric modeling challenging, but poses no major difficulties for non-parametric methods. The method is also validated on synthetic data, exploring the effects of sampling and noise on the accuracy of the estimates

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

Abstract. Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples

Clustering of vacancy defects in high-purity semi-insulating SiC

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results suggest that Si vacancy related complexes compensate electrically the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.Comment: 8 pages, 5 figure

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2×1018 cm-2. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C3v symmetry with g = 2.004 and a fine-structure parameter D = 436.5×10-4 cm-1. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at ~550°C. The principal z-axis of the D tensor is parallel to the -directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C2v-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7×10-4 cm-1 and E = 56.2×10-4 cm-1. The L6 center disappeared after annealing at a rather low temperature (~200°C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials