1,192 research outputs found
Initial stage of the 2D-3D transition of a strained SiGe layer on a pit-patterned Si(001) template
We investigate the initial stage of the 2D-3D transition of strained Ge
layers deposited on pit-patterned Si(001) templates. Within the pits, which
assume the shape of inverted, truncated pyramids after optimized growth of a Si
buffer layer, the Ge wetting layer develops a complex morphology consisting
exclusively of {105} and (001) facets. These results are attributed to a
strain-driven step-meandering instability on the facetted side-walls of the
pits, and a step-bunching instability at the sharp concave intersections of
these facets. Although both instabilities are strain-driven, their coexistence
becomes mainly possible by the geometrical restrictions in the pits. It is
shown that the morphological transformation of the pit surface into low-energy
facets has strong influence on the preferential nucleation of Ge islands at the
flat bottom of the pits.Comment: 19 pages, 7 figure
Giant g factor tuning of long-lived electron spins in Ge
Control of electron spin coherence via external fields is fundamental in
spintronics. Its implementation demands a host material that accommodates the
highly desirable but contrasting requirements of spin robustness to relaxation
mechanisms and sizeable coupling between spin and orbital motion of charge
carriers. Here we focus on Ge, which, by matching those criteria, is rapidly
emerging as a prominent candidate for shuttling spin quantum bits in the mature
framework of Si electronics. So far, however, the intrinsic spin-dependent
phenomena of free electrons in conventional Ge/Si heterojunctions have proved
to be elusive because of epitaxy constraints and an unfavourable band
alignment. We overcome such fundamental limitations by investigating a two
dimensional electron gas (2DEG) confined in quantum wells of pure Ge grown on
SiGe-buffered Si substrates. These epitaxial systems demonstrate exceptionally
long spin relaxation and coherence times, eventually unveiling the potential of
Ge in bridging the gap between spintronic concepts and semiconductor device
physics. In particular, by tuning spin-orbit interaction via quantum
confinement we demonstrate that the electron Land\'e g factor and its
anisotropy can be engineered in our scalable and CMOS-compatible architectures
over a range previously inaccessible for Si spintronics
Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells
Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si
quantum wells we determine the carrier-density-dependence of the magnetic
susceptibility. Assuming weak interaction we evaluate the density of states at
the Fermi level D(E_F), and the screening wave vector, q_TF. Both are constant
at higher carrier densities n, as for an ideal 2D carrier gas. For n < 3e11
cm-2, they decrease and extrapolate to zero at n = 7e10 cm-2. Calculating the
mobility from q_TF yields good agreement with experimental values justifying
the approach. The decrease in D(E_F) is explained by potential fluctuations
which lead to tail states that make screening less efficient and - in a
positive feedback - cause an increase of the potential fluctuations. Even in
our high mobility samples the fluctuations exceed the electron-electron
interaction leading to the formation of puddles of mobile carriers with at
least 1 micrometer diameter.Comment: 4 pages, 3 figure
Intelligent Management of Mobile Systems through Computational Self-Awareness
Runtime resource management for many-core systems is increasingly complex.
The complexity can be due to diverse workload characteristics with conflicting
demands, or limited shared resources such as memory bandwidth and power.
Resource management strategies for many-core systems must distribute shared
resource(s) appropriately across workloads, while coordinating the high-level
system goals at runtime in a scalable and robust manner.
To address the complexity of dynamic resource management in many-core
systems, state-of-the-art techniques that use heuristics have been proposed.
These methods lack the formalism in providing robustness against unexpected
runtime behavior. One of the common solutions for this problem is to deploy
classical control approaches with bounds and formal guarantees. Traditional
control theoretic methods lack the ability to adapt to (1) changing goals at
runtime (i.e., self-adaptivity), and (2) changing dynamics of the modeled
system (i.e., self-optimization).
In this chapter, we explore adaptive resource management techniques that
provide self-optimization and self-adaptivity by employing principles of
computational self-awareness, specifically reflection. By supporting these
self-awareness properties, the system can reason about the actions it takes by
considering the significance of competing objectives, user requirements, and
operating conditions while executing unpredictable workloads
Lattice dynamics reveals a local symmetry breaking in the emergent dipole phase of PbTe
Local symmetry breaking in complex materials is emerging as an important
contributor to materials properties but is inherently difficult to study. Here
we follow up an earlier structural observation of such a local symmetry broken
phase in the technologically important compound PbTe with a study of the
lattice dynamics using inelastic neutron scattering (INS). We show that the
lattice dynamics are responsive to the local symmetry broken phase, giving key
insights in the behavior of PbTe, but also revealing INS as a powerful tool for
studying local structure. The new result is the observation of the unexpected
appearance on warming of a new zone center phonon branch in PbTe. In a harmonic
solid the number of phonon branches is strictly determined by the contents and
symmetry of the unit cell. The appearance of the new mode indicates a crossover
to a dynamic lower symmetry structure with increasing temperature. No
structural transition is seen crystallographically but the appearance of the
new mode in inelastic neutron scattering coincides with the observation of
local Pb off-centering dipoles observed in the local structure. The observation
resembles relaxor ferroelectricity but since there are no inhomogeneous dopants
in pure PbTe this anomalous behavior is an intrinsic response of the system. We
call such an appearance of dipoles out of a non-dipolar ground-state
"emphanisis" meaning the appearance out of nothing. It cannot be explained
within the framework of conventional phase transition theories such as
soft-mode theory and challenges our basic understanding of the physics of
materials
g-Factor Tuning and Manipulation of Spins by an Electric Current
We investigate the Zeeman splitting of two-dimensional electrons in an
asymmetric silicon quantum well, by electron-spin-resonance (ESR) experiments.
Applying a small dc current we observe a shift in the resonance field due to
the additional current-induced Bychkov-Rashba (BR) type of spin-orbit (SO)
field. This finding demonstrates SO coupling in the most straightforward way:
in the presence of a transverse electric field the drift velocity of the
carriers imposes an effective SO magnetic field. This effect allows selective
tuning of the g-factor by an applied dc current. In addition, we show that an
ac current may be used to induce spin resonance very efficiently.Comment: 4 pages, 4 figure
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