3D-melting features of the irreversibility line in overdoped Bi2_2Sr2_2CuO6_6 at ultra-low temperature and high magnetic field

We have measured the irreversible magnetization of an overdoped Bi$_2$Sr$_2$CuO$_6$ single crystal up to B=28 T and down to T=60 mK, and extracted the irreversibility line $B_{\rm irr}(T)$: the data can be interpreted in the whole temperature range as a 3D-anisotropic vortex lattice melting line with Lindemann number $c_{\rm L}=0.13$. We also briefly discuss the applicability of alternative models such as 2D- and quantum melting, and the connection with magnetoresistance experiments.Comment: M2S-HTSC-VI Conference paper (2 pages, 1 figure), using Elsevier style espcrc2.st

Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime

We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with thickness (40-50 nm) larger than the electronic mean free path (23 nm). The temperature dependence of the dissipative resistance R_{xx} in the quantum Hall effect regime can be well described by a hopping law (R_{xx} \propto exp{-(T_0/T)^p}) with p=0.6. We discuss this result in terms of variable range hopping in a Coulomb gap together with a dependence of the electron localization length on the energy in the gap. The value of the exponent p>0.5 shows that electron-electron interactions have to be taken into account in order to explain the occurrence of the quantum Hall effect in these samples, which have a three-dimensional single electron density of states.Comment: 5 pages, 2 figures, 1 tabl

Injection and detection of spin in a semiconductor by tunneling via interface states

Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in itself, but in parallel with direct tunneling. The spin accumulation induced in the semiconductor channel is not suppressed, as previously argued, but genuinely enhanced by the additional spin current via interface states. Spin detection with a ferromagnetic contact yields a weighted average of the spin accumulation in the channel and in the localized states. In the regime where the spin accumulation in the localized states is much larger than that in the channel, the detected spin signal is insensitive to the spin accumulation in the localized states and the ferromagnet probes the spin accumulation in the semiconductor channel.Comment: 7 pages, 2 figures. Theory onl

Thermal spin current and magnetothermopower by Seebeck spin tunneling

The recently observed Seebeck spin tunneling, the thermoelectric analog of spin-polarized tunneling, is described. The fundamental origin is the spin dependence of the Seebeck coefficient of a tunnel junction with at least one ferromagnetic electrode. Seebeck spin tunneling creates a thermal flow of spin-angular momentum across a tunnel barrier without a charge tunnel current. In ferromagnet/insulator/semiconductor tunnel junctions this can be used to induce a spin accumulation (\Delta \mu) in the semiconductor in response to a temperature difference (\Delta T) between the electrodes. A phenomenological framework is presented to describe the thermal spin transport in terms of parameters that can be obtained from experiment or theory. Key ingredients are a spin-polarized thermoelectric tunnel conductance and a tunnel spin polarization with non-zero energy derivative, resulting in different Seebeck tunnel coefficients for majority and minority spin electrons. We evaluate the thermal spin current, the induced spin accumulation and \Delta\mu/\Delta T, discuss limiting regimes, and compare thermal and electrical flow of spin across a tunnel barrier. A salient feature is that the thermally-induced spin accumulation is maximal for smaller tunnel resistance, in contrast to the electrically-induced spin accumulation that suffers from the impedance mismatch between a ferromagnetic metal and a semiconductor. The thermally-induced spin accumulation produces an additional thermovoltage proportional to \Delta\mu, which can significantly enhance the conventional charge thermopower. Owing to the Hanle effect, the thermopower can also be manipulated with a magnetic field, producing a Hanle magnetothermopower.Comment: 10 pages, 3 figures, 1 tabl

Phase transition of the nucleon-antinucleon plasma at different ratios

We investigate phase transitions for the Walecka model at very high temperatures. As is well known, depending on the parametrization of this model and for the particular case of a zero chemical potential ($\mu$), a first order phase transition is possible \cite{theis}. We investigate this model for the case in which $\mu \ne 0$. It turns out that, in this situation, phases with different values of antinucleon-nucleon ratios and net baryon densities may coexist. We present the temperature versus antinucleon-nucleon ratio as well as the temperature versus the net baryon density for the coexistence region. The temperature versus chemical potential phase diagram is also presented.Comment: 5 pages, 8 figure

Pion-less effective field theory for atomic nuclei and lattice nuclei

We compute the medium-mass nuclei $^{16}$O and $^{40}$Ca using pionless effective field theory (EFT) at next-to-leading order (NLO). The low-energy coefficients of the EFT Hamiltonian are adjusted to experimantal data for nuclei with mass numbers $A=2$ and $3$, or alternatively to results from lattice quantum chromodynamics (QCD) at an unphysical pion mass of 806 MeV. The EFT is implemented through a discrete variable representation in the harmonic oscillator basis. This approach ensures rapid convergence with respect to the size of the model space and facilitates the computation of medium-mass nuclei. At NLO the nuclei $^{16}$O and $^{40}$Ca are bound with respect to decay into alpha particles. Binding energies per nucleon are 9-10 MeV and 30-40 MeV at pion masses of 140 MeV and 806 MeV, respectively.Comment: 26 page

3-point functions from twisted mass lattice QCD at small quark masses

We show at the example of the matrix element between pion states of a twist-2, non-singlet operator that Wilson twisted mass fermions allow to compute this phenomenologically relevant quantitiy at small pseudo scalar masses of O(270 MeV). In the quenched approximation, we investigate the scaling behaviour of this observable that is derived from a 3-point function by applying two definitions of the critical mass and find a scaling compatible with the expected O(a^2) behaviour in both cases. A combined continuum extrapolations allows to obtain reliable results at small pion masses, which previously could not be explored by lattice QCD simulations.Comment: 6 pages, 2 figures, talk presented at Lattice 200