Sample preparation method for scanning force microscopy

We present a method of sample preparation for studies of ion implantation on metal surfaces. The method, employing a mechanical mask, is specially adapted for samples analysed by Scanning Force Microscopy. It was successfully tested on polycrystallyne copper substrates implanted with phosphorus ions at an acceleration voltage of 39keV. The changes of the electrical properties of the surface were measured by Kelvin Probe Force Microscopy and the surface composition was analysed by Auger Electron Spectroscopy.552561Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP

Modification Of Electrode Materials For Plasma Torches

As part of the studies of new materials to be used as electrodes for plasma torches, polycrystalline copper thin film substrates, obtained by depositing copper on silicon wafer using the Electron Beam technique, were implanted with low energy (20-50 keV) alkali ions. The samples, before and after implantation process, were analysed in terms of surface composition and work function changes. Although the implantation doses were low (3×1015 ions/cm2), relatively high concentrations of alkali metals were detected on the surface, which yielded a work function decrease of 3-9% in relation to the copper value. © 2005 Elsevier B.V. All rights reserved.2001-4 SPEC. ISS.254257Szente, R.N., Munz, R.J., Drouet, M.G., (1990) J. Phys. D: Appl. Phys., 25, p. 1193Szente, R.N., Munz, R.J., Drouet, M.G., (1992) Plasma Chem. Plasma Process., 12 (6), p. 327Szente, R.N., Munz, R.J., Drouet, M.G., (1992) Pure Appl. Chem., 64 (5), p. 657Szente, R.N., Munz, R.J., Drouet, M.G., (1994) J. Phys. D: Appl. Phys., 27, p. 1443Jankov, I.R., Szente, R.N., Goldman, I.D., Carreño, M.N.P., Swart, J.W., Landers, R., (2001) Br. J. Phys., 31 (4), p. 552Jankov, I.R., Szente, R.N., Goldman, I.D., (2002) Vacuum, 65, p. 547Ziegler, J.F., Biersack, J.P., Littmark, U., (1985) The Stopping and Range of Ions in Solids, , New York: Pergamon PressNonnenmacher, M., O'Boyle, M.P., Wickramasinghe, H.K., (1991) Appl. Phys. Lett., 58 (25), p. 2921Martin, Y., Williams, C.C., Wickramasinghe, H.K., (1987) J. Appl. Phys., 61 (10), p. 4723(1997) CRC Handbook, , 78th e