Korean Tourist Spot Multi-Modal Dataset for Deep Learning Applications

Recently, deep learning-based methods for solving multi-modal tasks such as image captioning, multi-modal classification, and cross-modal retrieval have attracted much attention. To apply deep learning for such tasks, large amounts of data are needed for training. However, although there are several Korean single-modal datasets, there are not enough Korean multi-modal datasets. In this paper, we introduce a KTS (Korean tourist spot) dataset for Korean multi-modal deep-learning research. The KTS dataset has four modalities (image, text, hashtags, and likes) and consists of 10 classes related to Korean tourist spots. All data were extracted from Instagram and preprocessed. We performed two experiments, image classification and image captioning with the dataset, and they showed appropriate results. We hope that many researchers will use this dataset for multi-modal deep-learning research

Enhanced Thermoelectric Power Factor in Carrier-Type-Controlled Platinum Diselenide Nanosheets by Molecular Charge-Transfer Doping

2D transition metal dichalcogenides (TMDCs) have revealed great promise for realizing electronics at the nanoscale. Despite significant interests that have emerged for their thermoelectric applications due to their predicted high thermoelectric figure of merit, suitable doping methods to improve and optimize the thermoelectric power factor of TMDCs have not been studied extensively. In this respect, molecular charge-transfer doping is utilized effectively in TMDC-based nanoelectronic devices due to its facile and controllable nature owing to a diverse range of molecular designs available for modulating the degree of charge transfer. In this study, the power of molecular charge-transfer doping is demonstrated in controlling the carrier-type (n- and p-type) and thermoelectric power factor in platinum diselenide (PtSe2) nanosheets. This, combined with the tunability in the band overlap by changing the thickness of the nanosheets, allows a significant increase in the thermoelectric power factor of the n- and p-doped PtSe2 nanosheets to values as high as 160 and 250 µW mK−2, respectively. The methodology employed in this study provides a simple and effective route for the molecular doping of TMDCs that can be used for the design and development of highly efficient thermoelectric energy conversion systems. © 2022 Wiley-VCH GmbH.1

Ultrasensitive Photodetection in MoS2 Avalanche Phototransistors

© 2021 The Authors. Advanced Science published by Wiley-VCH GmbHRecently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based on 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high-gain route toward photodetection in the form of single-photon detectors. Here, the authors report ultrasensitive avalanche phototransistors based on monolayer MoS2 synthesized by chemical vapor deposition. A lower critical field for the electrical breakdown under illumination shows strong evidence for avalanche breakdown initiated by photogenerated carriers in MoS2 channel. By utilizing the photo-initiated carrier multiplication, their avalanche photodetectors exhibit the maximum responsivity of ≈3.4 × 107 A W−1 and the detectivity of ≈4.3 × 1016 Jones under a low dark current, which are a few orders of magnitudes higher than the highest values reported previously, despite the absence of any additional chemical treatments or photosensitizing layers. The realization of both the ultrahigh photoresponsivity and detectivity is attributed to the interplay between the carrier multiplication by avalanche breakdown and carrier injection across a Schottky barrier between the channel and metal electrodes. This work presents a simple and powerful method to enhance the performance of photodetectors based on carrier multiplication phenomena in 2D materials and provides the underlying physics of atomically thin avalanche photodetectors.11Nsciescopu

Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors

Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping of semiconductors, including TMDCs, typically involves generation of charged dopants that hinder charge transport, tackling Coulomb scattering induced by the externally introduced dopants remains a key challenge in achieving ultrahigh mobility 2D semiconductor systems. In this study, we demonstrated remote charge transfer doping by simply inserting a hexagonal boron nitride layer between MoS2 and solution-deposited n-type dopants, benzyl viologen. A quantitative analysis of temperature-dependent charge transport in remotely doped devices supports an effective suppression of the dopant-induced scattering relative to the conventional direct doping method. Our mechanistic investigation of the remote doping method promotes the charge transfer strategy as a promising method for material-level tailoring of electrical and optoelectronic devices based on TMDCs.Y

Large-scale, single-oriented ZnO nanostructure on h-BN films for flexible inorganic UV sensors

We report the growth of large-scale, single-oriented zinc oxide (ZnO) nanowall networks on epitaxial hexagonal boron nitride (h-BN) films and their application to flexible inorganic ultraviolet (UV) light sensors. Using catalyst-free metal-organic vapor phase epitaxy, ZnO nanowall networks with good vertical alignment are grown on epitaxial h-BN films. The single-oriented crystal structure of the ZnO nanostructures on h-BN is investigated using x-ray diffraction (XRD) spectroscopy, and the heteroepitaxial relationship between ZnO and h-BN is revealed through synchrotron radiation XRD. Interestingly, when utilizing the grown ZnO nanostructure as a channel for UV sensors, better performance merits such as a high I-UV/I-dark ratio, faster recovery time, and low dark current are achieved if h-BN is employed as a growth template. As an example of inorganic flexible optoelectronic device applications, flexible UV sensors are fabricated using ZnO/h-BN heterostructures owing to the insulating and transferrable nature of h-BN substrates. The sensor maintained an excellent performance, even under highly bent conditions