TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 x 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process. (C) 2011 Elsevier B.V. All rights reserved

Measurements of the Z partial decay width into c anti-c and multiplicity of charm quarks per b decay

The partial decay width $R_c$ of the $Z$ into $c\bar{c}$ quark pair and the number of charm quarks $n_c$ per $b$ decay are measured with the DELPHI detector at \mbox{LEP 1}. Particle identification provides clear $D^0$, $D^+$, $D_s^+$ and $\Lambda_c^+$ signatures. The charm hadron production rate is measured in each channel by a fit to the scaled energy, impact parameter information and the invariant mass spectrum. Two measurements of $R_c$ are presented, from the $D^{*+}$ production rate and from the overall charm counting, including strange charm baryon production, in $c\bar{c}$ events. The multiplicity $n_c$, which includes hidden $c\bar{c}$ and strange charm baryon production, is inferred from the charm counting in $b\bar{b}$ events. The final results are $R_c = 0.1665 \pm 0.0095$ and $n_c = 1.166 \pm 0.086$

Measurements of the Z partial decay width into c(c)over-bar and multiplicity of charm quarks per b decay

The partial decay width R-c of the Z into c (c) over bar quark pair and the number of charm quarks n(c) per b decay are measured with the DELPHI detector at LEP 1. Particle identification provides clear DO, D+, D-s(+) and Lambda(c)(+) signatures. The charm hadron production rate is measured in each channel by a fit to the scaled energy, impact parameter information and the invariant mass spectrum. Two measurements of R-c are presented, from the D*(+) production rate and from the overall charm counting, including strange charm baryon production, in c (c) over bar events. The multiplicity n(c), which includes hidden c (c) over bar and strange charm baryon production, is inferred from the charm counting in bb events. The final results are R-c = 0.1665 +/- 0.0095 and n(c) = 1.166 +/- 0.086

Measurement of the Z Partial Decay Width into cc- and Multiplicity of Charm Quarks per b Decay

0info:eu-repo/semantics/publishe