704 research outputs found

    Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

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    The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO₂ and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO₂ layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.One of the authors (H.H.T.) acknowledges a fellowship awarded to him by the Australian Research Council

    IoT enabled communication device with mixer less low complex QPSK based transmitter architecture for low frequency applications

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    echnological development in the area of wireless communications lead to the requirement of tight integration of both the digital and analog functional units. Integrating mixers is a challenging task, especially in mixed signal design. IoT communication devices require low design complexity as we expect millions of devices connected. In this paper we propose a mixer less low complex QPSK based transmitter architecture targeting low frequency applications which reduced the complexity in transmitter design. A prototype has been developed using Bipolar Junction Transistors (BJTs) and FPGA as the base band controller. The design can easily be adapted to MOSFET technology and modulation is achieved without the need of generating the carrier externally. The prototype developed was tested successfully by generating frequencies of range varying from 1 KHz to 120 MHz. The proposed architecture can also be used for any other digital modulation scheme such as BPSK, FSK etc

    Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

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    The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence(CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450–720nm is enhanced.The authors wish to acknowledge the Australian Research Council for its financial support

    Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

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    In this work, different dielectric caps were deposited on the GaAs/AlGaAs quantum well(QW) structures followed by rapid thermal annealing to generate different degrees of interdiffusion. Deposition of a layer of GaxOy on top of these dielectric caps resulted in significant suppression of interdiffusion. In these samples, it was found that although the deposition of GaxOy and subsequent annealing caused additional injection of Ga into the SiO₂ layer, Ga atoms were still able to outdiffuse from the GaAsQW structure during annealing, to generate excess Ga vacancies. The suppression of interdiffusion with the presence of Ga vacancies was explained by the thermal stress effect which suppressed Ga vacancydiffusion during annealing. It suggests that GaxOy may therefore be used as a mask material in conjunction with other dielectric capping layers in order to control and selectively achieve impurity-free vacancy disordering.J. Wong-Leung, P. N. K. Deenapanray, and H. H. Tan acknowledge the fellowships awarded by the Australian Research Council

    Effects of excitation density on cathodoluminescence from GaN

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    Wurtzite GaN epilayers are studied by cathodoluminescence(CL)spectroscopy. Results show that the intensities of donor–acceptor pair (DAP) and yellow luminescence (YL) peaks sublinearly depend on excitation density, presumably, due to saturation effects. The intensity of near-gap emission, however, exhibits a superlinear dependence on electron-beam excitation. In contrast to photoluminescence measurements, CL studies of GaN are usually performed in a regime with a strongly nonlinear dependence of luminescence intensities on excitation due to a large difference in carrier generation rates for these two techniques. As a result, the ratios of near-gap to YL and DAP emission intensities strongly depend on electron-beam current. Moreover, electron-beam spot size (i.e., beam focusing) dramatically affects CL intensity. An understanding of such saturation effects is necessary for a correct interpretation of CL spectra from GaN

    XML Reconstruction View Selection in XML Databases: Complexity Analysis and Approximation Scheme

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    Query evaluation in an XML database requires reconstructing XML subtrees rooted at nodes found by an XML query. Since XML subtree reconstruction can be expensive, one approach to improve query response time is to use reconstruction views - materialized XML subtrees of an XML document, whose nodes are frequently accessed by XML queries. For this approach to be efficient, the principal requirement is a framework for view selection. In this work, we are the first to formalize and study the problem of XML reconstruction view selection. The input is a tree TT, in which every node ii has a size cic_i and profit pip_i, and the size limitation CC. The target is to find a subset of subtrees rooted at nodes i1,,iki_1,\cdots, i_k respectively such that ci1++cikCc_{i_1}+\cdots +c_{i_k}\le C, and pi1++pikp_{i_1}+\cdots +p_{i_k} is maximal. Furthermore, there is no overlap between any two subtrees selected in the solution. We prove that this problem is NP-hard and present a fully polynomial-time approximation scheme (FPTAS) as a solution

    Cathodoluminescence depth profiling of ion-implanted GaN

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    Cathodoluminescence(CL)spectroscopy shows that even relatively low-dose keV light-ion bombardment (corresponding to the generation of ∼5×10¹⁹ vacancies/cm³) of wurtzite GaN results in a dramatic quenching of visible CL emission. Postimplantation annealing at temperatures up to 1050 °C generally causes a partial recovery of measured CL intensities. However, CL depth profiles indicate that, in most cases, such a recovery results from CL emission from virgin GaN, beyond the implanted layer due to a reduction in the extent of light absorption within the implanted layer. In this case, CL emission from the implanted layer remains completely quenched even after such an annealing. These results show that an understanding of the effects of ion bombardment and postimplantation annealing on luminescence generation and light absorption is required for a correct interpretation of luminescencespectra of GaN optically doped by keV ion implantation

    Comparative assessment of floristic structure, diversity and regeneration status of tropical rain forests of Western Ghats of Karnataka, India

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    Tropical forests are one of the richest landscapes in terms of its richness, diversity and endemicity. The present study was carried out in the Central Western Ghats: one of the hottest hotspot of biodiversity. The aim of the study was to compare floristic diversity in tropical wet evergreen forest between northern and southern parts of Western Ghats of Karnataka. Kodagu district in southern part and Uttara Kannada district in northern part was chosen to assess the same, as these two districts cover highest forest cover in the Western Ghats of Karnataka. In each district all the evergreen forests were sampled with 1000 m X 5 belt transacts. Totally 22 such samplings were done both southern and northern part of Western Ghats. In each of these transacts all the trees measuring e” 30 gbh were enumerated and botanically identified to the species level and the same was used for computation of diversity indices. The richness and diversity was comparatively higher in southern part compared to northern part of Western Ghats, where as the richness of threatened tree species was comparatively higher in northern part of Western Ghats. In addition to the species richness and diversity, the paper also deals with the dominant tree species and families in both the region

    CULTIVATION PROSPECTS OF DENDROCALAMUS ASPER BACKER.FOR EDIBLE SHOOTS IN SEMIARID AND HUMID TROPICS OF PENINSULAR INDIA

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    ABSTRACT: Dendrocalamus asper also known as 'Sweet Bamboo' is the most widely accepted species globally for edible shoots. The prospects of cultivation of D.asper in humid tropics and semiarid conditions of peninsular India was assessed using various financial indicators and through quantitative and qualitative analysis of juvenile shoots. Growth parameters in on-farm field trials by IWST, Bangalore suggest that this species grows well in humid tropical conditions as compared to semi-arid conditions in Peninsular India. In semiarid conditions in Hosakote, Bangalore on an average 16 shoots were produced in a five year old clump with the average shoot diameter of 18±1.1mm and extractable volume of > 0.75 kg. In humid tropical conditions in Thithimathi, Kodagu, D. asper clumps of same age produced around 25 shoots. The average shoot diameter was 55±2mm at the end of fifth year which translated into higher volume (> 2kg) of edible portion in harvested shoots. In D.asper, 30% extraction of the total new shoots emerging from the fifth year was ideal. There was no difference in nutritional composition of the species between semiarid and humid tropics in terms of protein, carbohydrates, crude fibre and fat.Financial indicators at different discount rates (10%, 12% and 15%) suggest that cultivation of D.asper for shoot production may be a profitable venture in humid tropics with a high equivalent annual net income (EAI) around 7.6 -9 lakhs as compared to a lower EAI in semiarid conditions (0.22 to 0.59 lakhs)
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