827 research outputs found
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both
experimentally and using a three-dimensional carrier dynamics simulation. A
uniform density of vacancies was formed over the optical absorption depth of
bulk GaAs samples by performing multi-energy implantations of arsenic ions (1
and 2.4MeV) and subsequent thermal annealing. In a series of THz emission
experiments the frequency of peak THz power was found to increase significantly
from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to
10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast
carrier dynamics to reproduce and explain these results. The effect of the
ion-induced damage was included in the simulation by considering carrier
scattering at neutral and charged impurities, as well as carrier trapping at
defect sites. Higher vacancy concentrations and shorter carrier trapping times
both contributed to shorter simulated THz pulses, the latter being more
important over experimentally realistic parameter ranges.Comment: 6 pages, 7 figure
Acceptor-like deep level defects in ion-implanted ZnO
N-type ZnO samples have been implanted with MeV Zn⁺ ions at room temperature to doses between 1×10⁸ and 2×10¹⁰cm⁻², and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K.This work was supported by the Norwegian Research
Council through the Frienergi program and the Australian
Research Council through the Discovery projects program
Hidden Order in Crackling Noise during Peeling of an Adhesive Tape
We address the long standing problem of recovering dynamical information from
noisy acoustic emission signals arising from peeling of an adhesive tape
subject to constant traction velocity. Using phase space reconstruction
procedure we demonstrate the deterministic chaotic dynamics by establishing the
existence of correlation dimension as also a positive Lyapunov exponent in a
mid range of traction velocities. The results are explained on the basis of the
model that also emphasizes the deterministic origin of acoustic emission by
clarifying its connection to sticks-slip dynamics.Comment: 5 pages, 10 figure
Polarisation-sensitive terahertz detection by multicontact photoconductive receivers
We have developed a terahertz radiation detector that measures both the
amplitude and polarization of the electric field as a function of time. The
device is a three-contact photoconductive receiver designed so that two
orthogonal electric-field components of an arbitrary polarized electromagnetic
wave may be detected simultaneously. The detector was fabricated on Fe+
ion-implanted InP. Polarization-sensitive detection is demonstrated with an
extinction ratio better than 100:1. This type of device will have immediate
application in studies of birefringent and optically active materials in the
far-infrared region of the spectrum.Comment: 3 pages, 3 figure
IoT enabled communication device with mixer less low complex QPSK based transmitter architecture for low frequency applications
echnological development in the area of wireless communications lead to the requirement of tight integration of both the digital and analog functional units. Integrating mixers is a challenging task, especially in mixed signal design. IoT communication devices require low design complexity as we expect millions of devices connected. In this paper we propose a mixer less low complex QPSK based transmitter architecture targeting low frequency applications which reduced the complexity in transmitter design. A prototype has been developed using Bipolar Junction Transistors (BJTs) and FPGA as the base band controller. The design can easily be adapted to MOSFET technology and modulation is achieved without the need of generating the carrier externally. The prototype developed was tested successfully by generating frequencies of range varying from 1 KHz to 120 MHz. The proposed architecture can also be used for any other digital modulation scheme such as BPSK, FSK etc
Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
The carrier dynamics of photoexcited electrons in the vicinity of the surface
of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission
spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy
measurements, coupled with Monte Carlo simulations of THz emission, revealed
that the surface electric field of GaAs reverses after passivation. The
conductivity of photoexcited electrons was determined via optical-pump
THz-probe spectroscopy, and was found to double after passivation. These
experiments demonstrate that passivation significantly reduces the surface
state density and surface recombination velocity of GaAs. Finally, we have
demonstrated that passivation leads to an enhancement in the power radiated by
photoconductive switch THz emitters, thereby showing the important influence of
surface chemistry on the performance of ultrafast THz photonic devices.Comment: 4 pages, 3 figures, to appear in Applied Physics Letter
Ultrafast trapping times in ion implanted InP
As⁺ and P⁺implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10¹⁶ cm⁻² and p-type InP was implanted with doses between 1×10¹² and 1×10¹⁶ cm⁻². Subsequently, rapid thermal annealing at temperatures between 400 and 700 °C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implantedp-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity
On the nature of radiative recombination in GaAsN
Radiative recombination at low temperatures in GaAsN is often associated with localized excitons. In this short note, we report results from high-resolution time-resolvedphotoluminescencespectroscopy that indicate that excitons, localized or otherwise, cannot be involved in the recombination process of this alloy system. The risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected, and found from excitonic recombination in other III–V materials, such as GaAs. We suggest that the radiative recombination in GaAsN takes place between localized electrons and delocalized holes
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