The origin of defects induced in ultra-pure germanium by Electron Beam Deposition

The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported on by a number of groups. These observations have been made in great detail using sensitive electrical techniques but there is still much that needs to be clarified. Experiments using Ge and Si were performed that demonstrate that energetic particles, the products of collisions in the electron beam, were responsible for the majority of electron-beam deposition (EBD) induced defects in a two-step energy transfer process. Lowering the number of collisions of these energetic particles with the semiconductor during metal deposition was accomplished using a combination of static shields and superior vacuum resulting in devices with defect concentrations lower than $10^{11}\,$cm$^{-3}$, the measurement limit of our deep level transient spectroscopy (DLTS) system. High energy electrons and photons that samples are typically exposed to were not influenced by the shields as most of these particles originate at the metal target thus eliminating these particles as possible damage causing agents. It remains unclear how packets of energy that can sometimes be as small of 2eV travel up to a $\mu$m into the material while still retaining enough energy, that is, in the order of 1eV, to cause changes in the crystal. The manipulation of this defect causing phenomenon may hold the key to developing defect free material for future applications.Comment: 18 pages, 9 figure

Experimental observation of moving intrinsic localized modes in germanium

Deep level transient spectroscopy shows that defects created by alpha irradiation of germanium are annealed by low energy plasma ions up to a depth of several thousand lattice units. The plasma ions have energies of 2-8eV and therefore can deliver energies of the order of a few eV to the germanium atoms. The most abundant defect is identified as the E-center, a complex of the dopant antimony and a vacancy with and annealing energy of 1.3eV as determined by our measurements. The inductively coupled plasma has a very low density and a very low flux of ions. This implies that the ion impacts are almost isolated both in time and at the surface of the semiconductor. We conclude that energy of the order of an eV is able to travel a large distance in germanium in a localized way and is delivered to the defects effectively. The most likely candidates are vibrational nonlinear wave packets known as intrinsic localized modes, which exist for a limited range of energies. This property is coherent with the fact that more energetic ions are less efficient at producing the annealing effect.Comment: 20 pages, 10 figure

Discrete breathers in ϕ4\phi^4 and related models

We touch upon the wide topic of discrete breather formation with a special emphasis on the the $\phi^4$ model. We start by introducing the model and discussing some of the application areas/motivational aspects of exploring time periodic, spatially localized structures, such as the discrete breathers. Our main emphasis is on the existence, and especially on the stability features of such solutions. We explore their spectral stability numerically, as well as in special limits (such as the vicinity of the so-called anti-continuum limit of vanishing coupling) analytically. We also provide and explore a simple, yet powerful stability criterion involving the sign of the derivative of the energy vs. frequency dependence of such solutions. We then turn our attention to nonlinear stability, bringing forth the importance of a topological notion, namely the Krein signature. Furthermore, we briefly touch upon linearly and nonlinearly unstable dynamics of such states. Some special aspects/extensions of such structures are only touched upon, including moving breathers and dissipative variations of the model and some possibilities for future work are highlighted

Rate theory of acceleration of the defect annealing driven by discrete breathers

Novel mechanisms of defect annealing in solids are discussed, which are based on the large amplitude anharmonic lattice vibrations, a.k.a. intrinsic localized modes or discrete breathers (DBs). A model for amplification of defect annealing rate in Ge by low energy plasma-generated DBs is proposed, in which, based on recent atomistic modelling, it is assumed that DBs can excite atoms around defects rather strongly, giving them energy $\gg k_BT$ for $\sim$100 oscillation periods. This is shown to result in the amplification of the annealing rates proportional to the DB flux, i.e. to the flux of ions (or energetic atoms) impinging at the Ge surface from inductively coupled plasma (ICP)Comment: 18 pages, 11 figures. arXiv admin note: text overlap with arXiv:1406.394

PT-Symmetric Dimer in a Generalized Model of Coupled Nonlinear Oscillators

Abstract In the present work, we explore the case of a general PT -symmetric dimer in the context of two both linearly and nonlinearly coupled cubic oscillators. To obtain an analytical handle on the system, we first explore the rotating wave approximation converting it into a discrete nonlinear Schrödinger type dimer. In the latter context, the stationary solutions and their stability are identified numerically but also wherever possible analytically. Solutions stemming from both symmetric and anti-symmetric special limits are identified. A number of special cases are explored regarding the ratio of coefficients of nonlinearity between oscillators over the intrinsic one of each oscillator. Finally, the considerations are extended to the original oscillator model, where periodic orbits and their stability are obtained. When the solutions are found to be unstable their dynamics is monitored by means of direct numerical simulations