Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape in GaAs/Ga0.7Al0.3As quantum wells

In this work we analyze the relation between the interface microroughness and the full width at half maximum (FWHM) of the photoluminescence (PL) spectra for a GaAs/Ga0.7Al0.3As multiple quantum well (QW) system. We show that, in spite of the complex correlation between the microscopic interface-defects parameters and the QW optical properties, the Singh and Bajaj model [Appl. Phys. Lett. 44, 805 (1984)] provides a good quantitative description of the excitonic PL-FWHM. [S0163-1829(99)01424-1].6031519152

Evaluation of Arsenic Availability in Sulfidic Materials from Gold Mining Areas in Brazil

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)This study is aimed at evaluating the availability and mobility of arsenic in sulfidic materials from gold mining areas in Minas Gerais State, Brazil. Eight extraction media were employed in a sequential extraction scheme, as follows: exchangeable As; strongly adsorbed As; As coprecipitated with acid-volatile sulfide, carbonates, MnO2, and Al2O3; As coprecipitated with amorphous iron; As linked to crystalline iron oxide; As coprecipitated with silicates; As coprecipitated with amorphous FeS2 and As2S3, and residual As, which was determined by GFAAS. Results demonstrated that in spite of differences in arsenic concentrations, the availability of the metalloid was found to be low for all samples. In general, arsenic was found in less available forms. Nevertheless, most of the arsenic in the environment is retained in the fractions 3, 4, and 5 which are susceptible to dissolution in acid medium, which in turn might be due to oxidation of the sulfide present in the samples.223846794686Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Doctoral Research and Productivity ScholarshipsFundação de Amparo à Pesquisa do Estado de Minas Gerais (FAPEMIG)PRPq/UFMGConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq

Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers

The photogenerated carrier-induced band-edge modifications of beryllium single delta-doped GaAs layers com comprising a two-dimensional hole gas (2DHG) were investigated by means of photoluminescence, selective photoluminescence, and photoluminescence excitation spectroscopies. The results show direct evidence for a photoinduced electron confinement effect, which strongly enhances the radiative-recombination probability between electrons and holes of the 2DHG at low temperatures,5974634463