21 research outputs found
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Cs adsorption on Bi 2 Se 3
Bi 2 Se 3 is a topological insulator whose unique properties result from topological surface states (TSS) in the band gap. The adsorption of Cs onto a Bi 2 Se 3 surface is investigated by low energy ion scattering and work function measurements. Much of the deposited Cs quickly diffuses to the step edges forming one-dimensional chains of positively charged adatoms, along with some deposition on the terraces. The work function decreases until a coverage of 0.1 ML is reached, beyond which it increases slightly. The minimum in the work function is due to depolarization of the dipoles induced when the concentration of adatoms in the chains reaches a critical value. A slow diffusion of adsorbed Cs from the terraces to the step edges is also marked by changes in the neutralization of scattered Na + and work function over time. The spatial distribution of the conductive charges in the TSS, which are primarily positioned between the first and second atomic layers, is confirmed by comparison of the neutralization of Na + scattered from Bi and Se
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Termination of single-crystal B i2 S e3 surfaces prepared by various methods
Bismuth Selenide (Bi2Se3) is a topological insulator with a two-dimensional layered structure that enables clean and well-ordered surfaces to be prepared by cleaving. Although some studies have demonstrated that the cleaved surface is terminated with Se, as expected from the bulk crystal structure, other reports have indicated either a Bi- or mixed-termination. Low-energy ion scattering (LEIS), low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) are used here to compare surfaces prepared by ex situ cleaving, in situ cleaving, and ion bombardment and annealing (IBA) in ultrahigh vacuum (UHV). Surfaces prepared by in situ cleaving and IBA are well ordered and Se-terminated. Ex situ cleaved samples could be either Se-terminated or Bi-rich, are less well ordered and have adsorbed contaminants. This suggests that a chemical reaction involving atmospheric contaminants, which may preferentially adsorb at surface defects, could contribute to the nonreproducibility of the termination
Detailed analysis of impact collision ion scattering spectroscopy of bismuth selenide
Impact collision ion scattering spectroscopy (ICISS), which is a variation of low energy ion scattering (LEIS) that employs large scattering angles, is performed on Bi2Se3 surfaces prepared by ion bombardment and annealing. ICISS angular scans are collected experimentally and simulated numerically along the [120] and [ 1 ¯ 2 ¯0] azimuths, and the match of the positions of the flux peaks shows that the top three atomic layers are bulk-terminated. A newly observed feature is identified as a minimum in the multiple scattering background when the ion beam incidence is along a low index direction. Calculated scans as a function of scattering angle are employed to identify the behavior of flux peaks to show whether they originate from shadowing, blocking or both. This new method for analysis of large-angle LEIS data is shown to be useful for accurately investigating complex surface structures
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Spatial distribution of topological surface state electrons in Bi2Te3 probed by low-energy Na+ ion scattering
Bi2Te3 is a topological insulator whose unique properties result from topological surface states in the band gap. The neutralization of scattered low-energy Na+, which is sensitive to dipoles that induce inhomogeneities in the local surface potential, is larger when scattered from Te than from Bi, indicating an upwards dipole at the Te sites and a downwards dipole above Bi. These dipoles are caused by the spatial distribution of the conductive electrons in the topological surface states. This result demonstrates how this alkali ion scattering method can be applied to provide direct experimental evidence of the spatial distribution of electrons in filled surface states
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Surface structure of in situ cleaved single crystal Bi2Se3 measured by low energy ion scattering
Bismuth selenide is a two-dimensional topological insulator material composed of stacked quintuple layers (QL). The layers are held together by a weak van der Waals force that enables surface preparation by cleaving. Low energy ion scattering experiments show that Bi2Se3 cleaved under ultrahigh vacuum has a Se-terminated structure that is consistent with cleaving between QLs. Comparison of experimental data to molecular dynamics simulations confirms the Se-termination and provides an estimate of the surface relaxation
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Spatial distribution of topological surface state electrons in Bi2Te3 probed by low-energy Na+ ion scattering
Bi2Te3 is a topological insulator whose unique properties result from topological surface states in the band gap. The neutralization of scattered low-energy Na+, which is sensitive to dipoles that induce inhomogeneities in the local surface potential, is larger when scattered from Te than from Bi, indicating an upwards dipole at the Te sites and a downwards dipole above Bi. These dipoles are caused by the spatial distribution of the conductive electrons in the topological surface states. This result demonstrates how this alkali ion scattering method can be applied to provide direct experimental evidence of the spatial distribution of electrons in filled surface states