Dynamic response of carbon nanotube field-effect transistors in the GHz range

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Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement

International audienceCarbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents in the mA range have been obtained. The dynamic response of the CN-FETs has been investigated through S-parameters measurements. A current gain (|H21|2) cut-off frequency (ft) of 8 GHz, and a maximum stable gain (MSG) value of 10 dB at 1 GHz have been obtained. The extraction of an equivalent circuit is proposed

Dynamic response of carbon nanotube field-effect transistors in the GHz range analysed by S-parameters measurements

International audienc

An 8-GHz ft carbon nanotube field-effect-transistor for gigahertz range applications

International audienceIn this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21|2) cutoff frequency (ft ) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivabl

Propriétés dynamiques de transistors à base de nanotubes de carbone

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Carbon nanotube field-effect transistor for GHz operation

International audienceThe paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F T of 1 GHz, with a slope of -20dB/decade, for the first tim

Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements

AC performances of carbon nanotube field-effect transistors (CNT-FETs) are analyzed by means of scattering parameters measurements. The active ac properties of CNT-FETs are clearly demonstrated up to 80 MHz and indications of active behavior are obtained up to 1 GHz. From these measurements, a small signal equivalent circuit is proposed and validated up to 10 MHz. The extraction procedure and the determination of the intrinsic ac elements of CNT-FETs are pointed out