Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy

We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%-1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells

Influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells: a PLE investigation

This paper is about the influence of nitrogen on the electronic structure of gaInNAs/GaAs multiquantum wells. It was presented at the 26th International Conference on the Physics of Semiconductors in 2002

How a polyploid becomes a new species: example from the Brassica model.

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