MIBiG 3.0: a community-driven effort to annotate experimentally validated biosynthetic gene clusters

Microbial Biotechnolog

Thin films of InP for photovoltaic energy conversion. First quarterly technical progress report, July 5, 1979-September 28, 1979

A research study is in progress to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable low-cost substrates. Heterostructure devices of CdS/InP and indium tin oxides (ITO)/InP are to be prepared by Stanford University under subcontract, using the InP films grown by MO-CVD. The first quarter's work is summarized. An existing reactor system was modified and upgraded, with provision for growth of GaAs intermediate layers and p-type doping capability using a premixed metalorganic Zn compound source, as well as a dilution system common to the dopants and the Group III and Group V reactants. The all-fused-quartz deposition chamber was redesigned to permit use of larger susceptors and to facilitate assembly, disassembly, and cleaning. Initial attempts to prepare p-type epitaxial InP films on single-crystal InP substrates met with only limited success until a new source of diethylzinc (DEZn) was obtained and installed on the system, after which active Zn concentrations (i.e., measured hole concentrations) in the 10/sup 17/ cm/sup -3/ range were produced in epitaxial films on (100), 111A), and (111B) InP substrates in the deposition temperature range 715 to 730/sup 0/C. The films have been characterized by x-ray and electron diffraction analyses, examination in the scanning electron microscope, and determination of transport properties by Hall-effect measurements using the van der Pauw method. Results of these investigations are reviewed