2,974 research outputs found
Design, processing, and testing of LSI arrays for space station
The development of a low power, high performance MOS 256-bit random assess memory with beam leads is discussed. Beam lead process development on silicon-on-sapphire (SOS) is also discussed, and initial electrical results on beam lead SOS TA5388 devices are presented. A comparison of the beam leaded 256-bit RAM (TA6567) layout is made with the non-beam leaded version (TA6473)
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