17,205 research outputs found

    Sub-Nanosecond Time of Flight on Commercial Wi-Fi Cards

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    Time-of-flight, i.e., the time incurred by a signal to travel from transmitter to receiver, is perhaps the most intuitive way to measure distances using wireless signals. It is used in major positioning systems such as GPS, RADAR, and SONAR. However, attempts at using time-of-flight for indoor localization have failed to deliver acceptable accuracy due to fundamental limitations in measuring time on Wi-Fi and other RF consumer technologies. While the research community has developed alternatives for RF-based indoor localization that do not require time-of-flight, those approaches have their own limitations that hamper their use in practice. In particular, many existing approaches need receivers with large antenna arrays while commercial Wi-Fi nodes have two or three antennas. Other systems require fingerprinting the environment to create signal maps. More fundamentally, none of these methods support indoor positioning between a pair of Wi-Fi devices without~third~party~support. In this paper, we present a set of algorithms that measure the time-of-flight to sub-nanosecond accuracy on commercial Wi-Fi cards. We implement these algorithms and demonstrate a system that achieves accurate device-to-device localization, i.e. enables a pair of Wi-Fi devices to locate each other without any support from the infrastructure, not even the location of the access points.Comment: 14 page

    Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films

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    We present a study of the proximity effect between a ferromagnet and a paramagnetic metal of varying disorder. Thin beryllium films are deposited onto a 5 nm-thick layer of the ferromagnetic insulator EuS. This bilayer arrangement induces an exchange field, HexH_{ex}, of a few tesla in low resistance Be films with sheet resistance RRQR\ll R_Q, where RQ=h/e2R_Q=h/e^2 is the quantum resistance. We show that HexH_{ex} survives in very high resistance films and, in fact, appears to be relatively insensitive to the Be disorder. We exploit this fact to produce a giant low-field magnetoresistance in the correlated insulator phase of Be films with RRQR\gg R_Q.Comment: To be published in Physical Review Letter

    On the impermanence of species: The collapse of genetic incompatibilities in hybridizing populations

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    Species pairs often become genetically incompatible during divergence, which is an important source of reproductive isolation. An idealized picture is often painted where incompatibility alleles accumulate and fix between diverging species. However, recent studies have shown both that incompatibilities can collapse with ongoing hybridization, and that incompatibility loci can be polymorphic within species. This paper suggests some general rules for the behavior of incompatibilities under hybridization. In particular, we argue that redundancy of genetic pathways can strongly affect the dynamics of intrinsic incompatibilities. Since fitness in genetically redundant systems is unaffected by introducing a few foreign alleles, higher redundancy decreases the stability of incompatibilities during hybridization, but also increases tolerance of incompatibility polymorphism within species. We use simulations and theories to show that this principle leads to two types of collapse: in redundant systems, exemplified by classical Dobzhansky–Muller incompatibilities, collapse is continuous and approaches a quasi-neutral polymorphism between broadly sympatric species, often as a result of isolation-by-distance. In nonredundant systems, exemplified by co-evolution among genetic elements, incompatibilities are often stable, but can collapse abruptly with spatial traveling waves. As both types are common, the proposed principle may be useful in understanding the abundance of genetic incompatibilities in natural populations

    Influence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystals

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    A detailed study of the influence of substrate temperature on the radiation-induced lattice strain field and crystalline-to-amorphous (c-a) phase transition in MeV oxygen ion implanted GaAs crystals has been made using channeling Rutherford backscattering spectroscopy, secondary ion mass spectrometry, and the x-ray rocking curve technique. A comparison has been made between the cases of room temperature (RT) and low temperature (LT) (about 100 K) implantation. A strong in situ dynamic annealing process is found in RT implantation at a moderate beam current, resulting in a uniform positive strain field in the implanted layer. LT implantation introduces a freeze-in effect which impedes the recombination and diffusion of initial radiation-created lattice damage and defects, and in turn drives more efficiently the c-a transition as well as strain saturation and relaxation. The results are interpreted with a spike damage model in which the defect production process is described in terms of the competition between defect generation by nuclear spikes and defects diffusion and recombination stimulated by electronic spikes. It is also suggested that the excess population of vacancies and their complexes is responsible for lattice spacing expansion in ion-implanted GaAs crystals

    Manipulating Majorana Fermions in Quantum Nanowires with Broken Inversion Symmetry

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    We study a Majorana-carrying quantum wire, driven into a trivial phase by breaking the spatial inversion symmetry with a tilted external magnetic field. Interestingly, we predict that a supercurrent applied in the proximate superconductor is able to restore the topological phase and therefore the Majorana end-states. Using Abelian bosonization, we further confirm this result in the presence of electron-electron interactions and show a profound connection of this phenomenon to the physics of a one-dimensional doped Mott-insulator. The present results have important applications in e.g., realizing a supercurrent assisted braiding of Majorana fermions, which proves highly useful in topological quantum computation with realistic Majorana networks.Comment: 5 pages, 3 figures, Supplementary Material is adde

    Entropy, Dynamics and Instantaneous Normal Modes in a Random Energy Model

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    It is shown that the fraction f of imaginary frequency instantaneous normal modes (INM) may be defined and calculated in a random energy model(REM) of liquids. The configurational entropy S and the averaged hopping rate among the states R are also obtained and related to f, with the results R~f and S=a+b*ln(f). The proportionality between R and f is the basis of existing INM theories of diffusion, so the REM further confirms their validity. A link to S opens new avenues for introducing INM into dynamical theories. Liquid 'states' are usually defined by assigning a configuration to the minimum to which it will drain, but the REM naturally treats saddle-barriers on the same footing as minima, which may be a better mapping of the continuum of configurations to discrete states. Requirements of a detailed REM description of liquids are discussed
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