Electron microscopy study on the influence of B-implantation on Ni induced lateral crystallization in amorphous Si

Nickel Metal Induced Lateral Crystallization (Ni-MILC) emerged as a viable technique for crystallization of a-Si films decreasing the crystallization temperature. Boron (B) implantation on a-Si films significantly enhances the crystallization rate of the Ni-MILC process. The structural characteristics of the implanted by Boron and subsequently crystallized by MILC a-Si films are studied by Transmission Electron Microscopy (TEM) and they are compared to intrinsic a-Si films which were deposited on top, as well as beside the boron implanted a-Si film. During the annealing, spontaneous nucleation occurs in the B-doped films far from the a-c interface, revealing a shorter incubation period in the B-doped films

Electrical and structural characterization of wafer bonded non-annealed Simox

The formation of a BESOI structures where the silicon overlayer originates from non-annealed SIMOX is described. The method is applied for the first time and it's intention is to provide an accurate way to control the thickness of the Si-film. The structural characteristics of the Si-overlayer and the electrical characteristics of the bonded interface are presented. © 1995