Electronic instabilities in metal-insulator semiconductor devices

Electronic charge injection instability in silicon nitride metal-insulator-semiconductor device

Theoretical and experimental studies of radiation induced damage to semiconductor surfaces and the effects of this damage on semiconductor device performance Final report, 1 Mar. 1964 - 31 Aug. 1968

Radiation damage on semiconductor surfaces and effects on performanc

A theoretical study of heterojunction and graded band gap type solar cells

A computer program was designed for the analysis of variable composition solar cells and applied to several proposed solar cell structures using appropriate semiconductor materials. The program simulates solar cells made of a ternary alloy of two binary semiconductors with an arbitrary composition profile, and an abrupt or Gaussian doping profile of polarity n-on-p or p-on-n with arbitrary doping levels. Once the device structure is specified, the program numerically solves a complete set of differential equations and calculates electrostatic potential, quasi-Fermi levels, carrier concentrations and current densities, total current density and efficiency as functions of terminal voltage and position within the cell. These results are then recorded by computer in tabulated or plotted form for interpretation by the user

A theoretical study of heterojunction and graded band gap type solar cells

The theory of heterojunction and graded bandgap solar cells was studied to help determine the material compositions and device dimensions needed for high efficiency solar cells. Because of the involved analysis of the fundamental equations describing solar cell operation, a general numerical device analysis program was used. A major part of the initial work was involved in modifying an existing silicon solar cell analysis program to account for the unique features of graded bandgap and heterojunction solar cells. The most successful III-V solar cells have so far been constructed in the GaAs and Gal-xAlxAs material systems; this project was concerned with such solar cells. The most efficient solar cell so far evaluated is an abrupt heterojunction cell with a pure AlAs layer at the surface with a GaAs substrate. The predicted efficiency for this cell is slightly larger than that of a graded bandgap Gal-xAlxAs solar cell

A theoretical study of heterojunction and graded band gap type solar cells

Heterojunction and graded band gap type solar cells are theoretically investigated. A computer program is developed to account for energy band gap variations and the resulting built-in electric fields which result from heterojunctions and graded energy band gaps. This program is used in studying solar cell operation under various optical irradiation conditions. Results are summarized

Proof of a generalized Geroch conjecture for the hyperbolic Ernst equation

We enunciate and prove here a generalization of Geroch's famous conjecture concerning analytic solutions of the elliptic Ernst equation. Our generalization is stated for solutions of the hyperbolic Ernst equation that are not necessarily analytic, although it can be formulated also for solutions of the elliptic Ernst equation that are nowhere axis-accessible.Comment: 75 pages (plus optional table of contents). Sign errors in elliptic case equations (1A.13), (1A.15) and (1A.25) are corrected. Not relevant to proof contained in pape

A theoretical analysis of the current-voltage characteristics of solar cells

The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells

A theoretical analysis of the current-voltage characteristics of solar cells

The correlation of theoretical and experimental data is discussed along with the development of a complete solar cell analysis. The dark current-voltage characteristics, and the parameters for solar cells are analyzed. The series resistance, and impurity gradient effects on solar cells were studied, the effects of nonuniformities on solar cell performance were analyzed

A theoretical study of heterojunction and graded band gap type solar cells

The work performed concentrated on including multisun effects, high temperature effects, and electron irradiation effects into the computer analysis program for heterojunction and graded bandgap solar cells. These objectives were accomplished and the program is now available for such calculations

A theoretical analysis of the current-voltage characteristics of solar cells

Various mechanisms which limit the conversion efficiency of silicon solar cells were studied. The effects of changes in solar cell geometry such as layer thickness on performance were examined. The effects of various antireflecting layers were also examined. It was found that any single film antireflecting layer results in a significant surface loss of photons. The use of surface texturing techniques or low loss antireflecting layers can enhance by several percentage points the conversion efficiency of silicon cells. The basic differences between n(+)-p-p(+) and p(+)-n-n(+) cells are treated. A significant part of the study was devoted to the importance of surface region lifetime and heavy doping effects on efficiency. Heavy doping bandgap reduction effects are enhanced by low surface layer lifetimes, and conversely, the reduction in solar cell efficiency due to low surface layer lifetime is further enhanced by heavy doping effects. A series of computer studies is reported which seeks to determine the best cell structure and doping levels for maximum efficiency